Patents by Inventor Alvydas Lisauskas

Alvydas Lisauskas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9508764
    Abstract: The invention relates to a device for detecting electromagnetic radiation in the THz frequency range, comprising at least one transistor (FET1, FET2), which has a first electrode, a second electrode, a control electrode, and a channel between the first electrode and the second electrode, and comprising an antenna structure. An electrode is connected to the antenna structure such that an electromagnetic signal which lies in the THz-frequency range and which is received by the antenna structure (1) can be fed into the channel between electrodes and the control electrode is connected to an electrode via a capacitor and/or the control electrode and the first electrode or the control electrode and the second electrode have an intrinsic capacitor such that no AC voltage drop occurs between the control electrode and the first electrode or the second electrode.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: November 29, 2016
    Assignee: Johann Wolfgang Goethe-Universitat Frankfurt a. M.
    Inventors: Sebastian Boppel, Alvydas Lisauskas, Hartmut Roskos, Viktor Krozer
  • Patent number: 9190956
    Abstract: A sub-harmonic electronic mixer has at least one field effect transistor (FET) having a gate, source, and drain; and a useful signal input at a useful frequency; and a local oscillator input. The input receives the oscillator signal at a frequency being an integral fraction of the useful frequency, plus or minus a mixing frequency to provide a signal output. A gate of the FET and/or the drain and/or the source receives the useful signal to generate a gate-source voltage and/or a drain-source voltage whereby the gate receives the local oscillator signal to generate a gate-source voltage, and the drain or a source receives the local oscillator signal to generate a drain-source voltage. A phase shift is introduced between the signal received at the gate and the signal received at the drain or source of the FET.
    Type: Grant
    Filed: May 13, 2011
    Date of Patent: November 17, 2015
    Assignee: Johann Wolfgang Goethe-Universitat Frankfurt a.M.
    Inventors: Hartmut G. Roskos, Alvydas Lisauskas, Sebastian Boppel
  • Publication number: 20140145778
    Abstract: A sub-harmonic electronic mixer has at least one field effect transistor (FET) having a gate, source, and drain; and a useful signal input at a useful frequency; and a local oscillator input. The input receives the oscillator signal at a frequency being an integral fraction of the useful frequency, plus or minus a mixing frequency to provide a signal output. A gate of the FET and/or the drain and/or the source receives the useful signal to generate a gate-source voltage and/or a drain-source voltage whereby the gate receives the local oscillator signal to generate a gate-source voltage, and the drain or a source receives the local oscillator signal to generate a drain-source voltage. A phase shift is introduced between the signal received at the gate and the signal received at the drain or source of the FET.
    Type: Application
    Filed: May 13, 2011
    Publication date: May 29, 2014
    Inventors: Hartmut G. Roskos, Alvydas Lisauskas, Sebastian Boppel
  • Publication number: 20140091376
    Abstract: The invention relates to a device for detecting electromagnetic radiation in the THz frequency range, comprising at least one transistor (FET1, FET2), which has a first electrode, a second electrode, a control electrode, and a channel between the first electrode and the second electrode, and comprising an antenna structure. An electrode is connected to the antenna structure such that an electromagnetic signal which lies in the THz-frequency range and which is received by the antenna structure (1) can be fed into the channel between electrodes and the control electrode is connected to an electrode via a capacitor and/or the control electrode and the first electrode or the control electrode and the second electrode have an intrinsic capacitor such that no AC voltage drop occurs between the control electrode and the first electrode or the second electrode.
    Type: Application
    Filed: May 31, 2012
    Publication date: April 3, 2014
    Applicant: JOHANN WOLFGANG GOETHE-UNIVERSITAT FRANKFURT A.M.
    Inventors: Sebastian Boppel, Alvydas Lisauskas, Hartmut Roskos, Viktor Krozer
  • Patent number: 8547158
    Abstract: The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies.
    Type: Grant
    Filed: August 28, 2009
    Date of Patent: October 1, 2013
    Assignee: Johann Wolfgang Goeth-Universit├Ąt Frankfurt a.M.
    Inventors: Ullrich Pfeiffer, Erik Oejefors, Hartmut G. Roskos, Alvydas Lisauskas
  • Publication number: 20110254610
    Abstract: The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies.
    Type: Application
    Filed: August 28, 2009
    Publication date: October 20, 2011
    Applicants: BERGISCHE UNIVERSIT??T WUPPERTAL, JOHANN WOLFGANG GOETHE-UNIVERSITAT FRANKFURT A.M.
    Inventors: Ullrich Pfeiffer, Erik Oejefors, Hartmut G. Roskos, Alvydas Lisauskas