Patents by Inventor Amrita B. Mullick
Amrita B. Mullick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11705366Abstract: Methods of etching a metal layer and a metal-containing barrier layer to a predetermined depth are described. In some embodiments, the metal layer and metal-containing barrier layer are formed on a substrate with a first dielectric and a second dielectric thereon. The metal layer and the metal-containing barrier layer formed within a feature in the first dielectric and the second dielectric. In some embodiments, the metal layer and metal-containing barrier layer can be sequentially etched from a feature formed in a dielectric material. In some embodiments, the sidewalls of the feature formed in a dielectric material are passivated to change the adhesion properties of the dielectric material.Type: GrantFiled: June 11, 2021Date of Patent: July 18, 2023Assignee: Micromaterials LLCInventors: He Ren, Amrita B. Mullick, Regina Freed, Mehul Naik, Uday Mitra
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Patent number: 11515207Abstract: Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.Type: GrantFiled: October 27, 2021Date of Patent: November 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Amrita B. Mullick, Srinivas Gandikota
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Patent number: 11462438Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal-containing film in a substrate feature and silicidizing the metal-containing film to form a self-aligned structure comprising metal silicide. In some embodiments, the rate of formation of the self-aligned structure is controlled. In some embodiments, the amount of volumetric expansion of the metal-containing film to form the self-aligned structure is controlled. Methods of forming self-aligned vias are also described.Type: GrantFiled: September 14, 2018Date of Patent: October 4, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Susmit Singha Roy, Srinivas Gandikota, Abhijit Basu Mallick, Amrita B. Mullick
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Publication number: 20220051941Abstract: Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.Type: ApplicationFiled: October 27, 2021Publication date: February 17, 2022Applicant: Applied Materials, Inc.Inventors: Amrita B. Mullick, Srinivas Gandikota
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Patent number: 11232955Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.Type: GrantFiled: March 26, 2020Date of Patent: January 25, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
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Publication number: 20210404046Abstract: Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.Type: ApplicationFiled: September 13, 2021Publication date: December 30, 2021Applicant: Applied Materials, Inc.Inventors: Amrita B. Mullick, Pramit Manna, Abhijit Basu Mallick
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Patent number: 11189529Abstract: Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.Type: GrantFiled: March 6, 2019Date of Patent: November 30, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Amrita B. Mullick, Srinivas Gandikota
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Publication number: 20210305091Abstract: Methods of etching a metal layer and a metal-containing barrier layer to a predetermined depth are described. In some embodiments, the metal layer and metal-containing barrier layer are formed on a substrate with a first dielectric and a second dielectric thereon. The metal layer and the metal-containing barrier layer formed within a feature in the first dielectric and the second dielectric. In some embodiments, the metal layer and metal-containing barrier layer can be sequentially etched from a feature formed in a dielectric material. In some embodiments, the sidewalls of the feature formed in a dielectric material are passivated to change the adhesion properties of the dielectric material.Type: ApplicationFiled: June 11, 2021Publication date: September 30, 2021Applicant: Micromaterials LLCInventors: He Ren, Amrita B. Mullick, Regina Freed, Mehul Naik, Uday Mitra
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Patent number: 11131015Abstract: Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.Type: GrantFiled: December 19, 2018Date of Patent: September 28, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Amrita B. Mullick, Pramit Manna, Abhijit Basu Mallick
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Patent number: 11062942Abstract: Methods of etching a metal layer and a metal-containing barrier layer to a predetermined depth are described. In some embodiments, the metal layer and metal-containing barrier layer are formed on a substrate with a first dielectric and a second dielectric thereon. The metal layer and the metal-containing barrier layer formed within a feature in the first dielectric and the second dielectric. In some embodiments, the metal layer and metal-containing barrier layer can be sequentially etched from a feature formed in a dielectric material. In some embodiments, the sidewalls of the feature formed in a dielectric material are passivated to change the adhesion properties of the dielectric material.Type: GrantFiled: December 10, 2018Date of Patent: July 13, 2021Assignee: Micromaterials LLCInventors: He Ren, Amrita B. Mullick, Regina Freed, Mehul Naik, Uday Mitra
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Patent number: 11037825Abstract: Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure utilize a cap layer to protect an insulating layer in order to minimize bowing of the side walls during metal recess in a fully self-aligned via. The cap layer can be selectively removed, thus increasing the aspect ratio, by exposing the substrate to a hot phosphoric acid solution.Type: GrantFiled: August 25, 2020Date of Patent: June 15, 2021Assignee: Micromaterials LLCInventors: Amrita B. Mullick, Madhur Sachan, He Ren, Swaminathan Srinivasan, Regina Freed, Uday Mitra
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Patent number: 10892183Abstract: Methods to remove metal oxides from substrate surfaces are described. Some embodiments of the disclosure utilize an aqueous alkaline solution to remove metal oxides from substrate surfaces using a wet method. Some embodiments of the disclosure are performed at atmospheric pressure and lower temperatures. Methods of forming self-aligned vias are also described.Type: GrantFiled: March 1, 2019Date of Patent: January 12, 2021Assignee: Micromaterials LLCInventors: Amrita B. Mullick, Uday Mitra, Regina Freed
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Publication number: 20200388535Abstract: Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure utilize a cap layer to protect an insulating layer in order to minimize bowing of the side walls during metal recess in a fully self-aligned via. The cap layer can be selectively removed, thus increasing the aspect ratio, by exposing the substrate to a hot phosphoric acid solution.Type: ApplicationFiled: August 25, 2020Publication date: December 10, 2020Applicant: Micromaterials LLCInventors: Amrita B. Mullick, Madhur Sachan, He Ren, Swaminathan Srinivasan, Regina Freed, Uday Mitra
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Patent number: 10790191Abstract: Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure utilize a cap layer to protect an insulating layer in order to minimize bowing of the side walls during metal recess in a fully self-aligned via. The cap layer can be selectively removed, thus increasing the aspect ratio, by exposing the substrate to a hot phosphoric acid solution.Type: GrantFiled: May 6, 2019Date of Patent: September 29, 2020Assignee: MICROMATERIALS LLCInventors: Amrita B. Mullick, Madhur Sachan, He Ren, Swaminathan Srinivasan, Regina Freed, Uday Mitra
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Publication number: 20200279772Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal-containing film in a substrate feature and silicidizing the metal-containing film to form a self-aligned structure comprising metal silicide. In some embodiments, the rate of formation of the self-aligned structure is controlled. In some embodiments, the amount of volumetric expansion of the metal-containing film to form the self-aligned structure is controlled. Methods of forming self-aligned vias are also described.Type: ApplicationFiled: September 14, 2018Publication date: September 3, 2020Inventors: Susmit Singha Roy, Srinivas Gandikota, Abhijit Basu Mallick, Amrita B. Mullick
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Publication number: 20200227275Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.Type: ApplicationFiled: March 26, 2020Publication date: July 16, 2020Applicant: Applied Materials, Inc.Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
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Patent number: 10699953Abstract: Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure provide an electronic device having a liner that is selectively removable when compared to conductive lines. The liner may be selectively removed by utilizing one or more of a base (e.g. sodium hydroxide) and hydrogen peroxide.Type: GrantFiled: May 29, 2019Date of Patent: June 30, 2020Assignee: Micromaterials LLCInventors: Amrita B. Mullick, Nitin K. Ingle, Xikun Wang, Regina Freed, Uday Mitra, Ho-yung David Hwang
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Patent number: 10622221Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.Type: GrantFiled: December 13, 2018Date of Patent: April 14, 2020Assignee: Applied Materials, Inc.Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
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Publication number: 20190378756Abstract: Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure provide an electronic device having a liner that is selectively removable when compared to conductive lines. The liner may be selectively removed by utilizing one or more of a base (e.g. sodium hydroxide) and hydrogen peroxide.Type: ApplicationFiled: May 29, 2019Publication date: December 12, 2019Inventors: Amrita B. Mullick, Nitin K. Ingle, Xikun Wang, Regina Freed, Uday Mitra, Ho-yung David Hwang
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Publication number: 20190355621Abstract: Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure utilize a sacrificial layer to increase the verticality of the pillars during metal recess in a fully self-aligned via. The sacrificial layer can be selectively removed to create pillars that are substantially vertical.Type: ApplicationFiled: May 14, 2019Publication date: November 21, 2019Inventors: Christophe Marcadal, Swaminathan Srinivasan, Amrita B. Mullick, Susmit Singha Roy