Patents by Inventor An-Cheng Chang

An-Cheng Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10879371
    Abstract: Embodiments described in this disclosure relate to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In some examples, after an interfacial layer and a gate dielectric layer are deposited, a rapid anneal process, such as laser anneal or flash lamp anneal process, is performed in a controlled ambient nitrogen-containing environment to form a nitrided portion in the gate dielectric layer. The nitrided portion passivates the defects at the surface of the gate dielectric layer and can serve as a barrier to prevent etchant chemistry and defects/dopants from the subsequent gate stack layers from affecting or diffusing through the gate dielectric layer. Particularly, the rapid anneal process is performed on a millisecond scale to confine nitrogen atoms in the gate dielectric layer without diffusing into the underlying interfacial dielectric and/or any neighboring structure such as fin.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Yun Li, Huicheng Chang, Che-Hao Chang, Hung-Yao Chen, Cheng-Po Chau, Xiong-Fei Yu, Terry Huang
  • Patent number: 10879364
    Abstract: A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, and a conductive plug. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductive plug is electrically connected to the source drain structure while leaving a gap between the conductive plug and the spacer.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Che-Cheng Chang, Chih-Han Lin, Horng-Huei Tseng
  • Patent number: 10879372
    Abstract: A semiconductor device includes a metal gate stack. The metal gate stack includes a high-k gate dielectric and a metal gate electrode over the high-k gate dielectric. The metal gate electrode includes a first top surface and a second bottom surface substantially diametrically opposite the first top surface. The first top surface includes a first surface length and the second bottom surface includes a second surface length. The first surface length is larger than the second surface length. A method of forming a semiconductor device is provided.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Che-Cheng Chang, Yi-Jen Chen, Chang-Yin Chen, Yung Jung Chang
  • Patent number: 10879119
    Abstract: In a method of manufacturing a semiconductor device, initial connection patterns are prepared, initial cutting patterns for cutting the initial connection patterns are prepared, non-functional connection patterns at least from the initial connection patterns are identified, final cutting patterns are prepared from the initial cutting patterns and the non-functional connection patterns, a photo mask is prepared from the final cutting patterns, a photo resist pattern is formed over a target layer by a lithography operation using the photo mask, the target layer is patterned to form openings in the target layer by using the photo resist pattern, and connection layers are formed by filling the openings with a conductive material.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yuan-Yen Lo, Chia-Cheng Chang, Ming-Jhih Kuo, Chien-Yuan Chen
  • Patent number: 10876997
    Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: December 29, 2020
    Inventors: Jui-Cheng Huang, Yi-Hsien Chang, Chin-Hua Wen, Chun-Ren Cheng, Shih-Fen Huang, Tung-Tsun Chen, Yu-Jie Huang, Ching-Hui Lin, Sean Cheng, Hector Chang
  • Patent number: 10879370
    Abstract: A method includes forming a dummy gate stack, forming a dielectric layer, with the dummy gate stack located in the dielectric layer, removing the dummy gate stack to form a opening in the dielectric layer, forming a metal layer extending into the opening, and etching back the metal layer. The remaining portions of the metal layer in the opening have edges lower than a top surface of the dielectric layer. A conductive layer is selectively deposited in the opening. The conductive layer is over the metal layer, and the metal layer and the conductive layer in combination form a replacement gate.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Peng-Soon Lim, Cheng-Lung Hung, Mao-Lin Huang, Weng Chang
  • Patent number: 10879061
    Abstract: Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Chun-Heng Chen, Hong-Fa Luan, Xiong-Fei Yu, Hui-Cheng Chang, Chia-Wei Hsu
  • Publication number: 20200402572
    Abstract: In one embodiment, a static random access memory (SRAM) device is provided. The SRAM device includes a memory cell, a bit line couple to the memory cell, a voltage supply line coupled to the memory cell, a control circuitry. The control circuitry is configured to charge a voltage supply line while the voltage supply line is electrically isolated from a bit line. A portion of the charge is transferred from the voltage supply line to the bit line. The voltage supply line is recharged while the voltage supply line is electrically isolated from the bit line storing the transferred portion of the charge. The memory cell is accessed using the recharge on the voltage supply line.
    Type: Application
    Filed: September 3, 2020
    Publication date: December 24, 2020
    Inventors: Mahmut Sinangil, Chiting Cheng, Hung-Jen Liao, Tsung-Yung Chang
  • Publication number: 20200403091
    Abstract: A gate-sinking pseudomorphic high electron mobility transistor comprises a compound semiconductor substrate overlaid with an epitaxial structure which includes sequentially a buffer layer, a channel layer, a Schottky layer, and a first cap layer. The Schottky layer comprises from bottom to top at least two stacked regions of semiconductor material. Each of the two adjacent stacked regions differs in material from the other and provides a stacked region contact interface therebetween. In any two adjacent stacked regions of the Schottky layer, one stacked region composed of AlGaAs-based semiconductor material alternates with the other stacked region composed of InGaP-based semiconductor material. A gate-sinking region is beneath the first gate metal layer of the gate electrode, and the bottom boundary of the gate-sinking region is located at the one of the at least one stacked region contact interface of the Schottky layer.
    Type: Application
    Filed: June 19, 2019
    Publication date: December 24, 2020
    Inventors: Chia-Ming CHANG, Jung-Tao CHUNG, Chang-Hwang HUA, Ju-Hsien LIN, Yan-Cheng LIN, Yu-Chi WANG
  • Publication number: 20200403506
    Abstract: A pulse-width-modulated switching power converter is provided in which a comparator has a boosted speed to determine a trip point at which a ramp signal equals an error signal. In a linear comparator embodiment, a one-shot bias boosting circuit triggers an increased bias current to the linear comparator to boost the speed to determine the trip point. In a sense-amplifier-based comparator embodiment, a clock generator enables the sense-amplifier-based comparator prior to the trip point.
    Type: Application
    Filed: June 24, 2019
    Publication date: December 24, 2020
    Inventors: Kevin Yi Cheng Chang, Kelly Consoer
  • Patent number: 10871647
    Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a trajectory correcting device attached to or embedded in the EUV collector mirror body and a trajectory correcting device to adjust the trajectory of metal from the reflective surface of the EUV collector mirror body to an opposite side of the EUV collector mirror body.
    Type: Grant
    Filed: July 19, 2019
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-An Liu, Gwan-Sin Chang, Bharath Kumar Pulicherla, Li-Jui Chen, Sheng-Kang Yu, Chung-Cheng Wu, Zhiqiang Wu
  • Patent number: 10873997
    Abstract: The present disclosure relates to a method and apparatus for controlling an artificial intelligent smart illumination device, such as a light bulb, LED light, or the like. In one embodiment, a switching circuit for providing switchable power to the illumination device, and a processing circuit coupled to the switching circuit, for detecting one or more power toggles of the power received by the male base, and for controlling illumination of the illumination device based on the detection of one or more detected toggles (e.g., switches) is disclosed. The disclosure includes an artificial intelligent system, which can determine a lighting status based on the user's preference, living behaviors, time of a day, energy efficiency, energy costs, and any other light using conditions and factors.
    Type: Grant
    Filed: July 19, 2019
    Date of Patent: December 22, 2020
    Inventors: Fong-min Chang, Chih-Cheng Tai
  • Patent number: 10872773
    Abstract: A method includes forming a metal-containing material layer over a substrate, patterning the metal-containing material layer, where the patterned material layer has an average roughness, and electrochemically treating the patterned metal-containing material layer to reduce the average roughness. The treatment may be implemented by exposing the patterned metal-containing material layer to an electrically conducting solution and applying a potential between the patterned material layer and a counter electrode exposed to the solution, such that the treating reduces the average roughness of the patterned material layer. The electrically conducting solution may include an ionic compound dissolved in water, alcohol, and/or a surfactant.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Wei Wang, Joy Cheng, Ching-Yu Chang, Chin-Hsiang Lin
  • Patent number: 10872890
    Abstract: A semiconductor device includes a substrate, a core device disposed above the substrate, and an input/output (I/O) device disposed above the substrate. The core device includes a first gate electrode having a bottom surface and a sidewall that define a first interior angle therebetween. The first interior angle is an obtuse angle. The I/O device includes a second gate electrode having a bottom surface and a sidewall that define a second interior angle therebetween. The second interior angle is greater than the first interior angle.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Che-Cheng Chang, Chih-Han Lin, Horng-Huei Tseng
  • Patent number: 10872406
    Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: December 22, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Huei Chen, Pei-Chao Su, Xiaomeng Chen, Chan-Ming Chang, Shih-Yung Chen, Hung-Yi Chung, Kuang-Shing Chen, Li-Jou Lee, Yung-Cheng Lin, Wei-Chen Wu, Shih-Chang Wang, Chien-An Lin
  • Patent number: 10872870
    Abstract: The present invention provides a semiconductor structure and a method of fabricating the same. The method includes: providing a chip having conductive pads, forming a metal layer on the conductive pads, forming a passivation layer on a portion of the metal layer, and forming conductive pillars on the metal layer. Since the metal layer is protected by the passivation layer, the undercut problem is solved, the supporting strength of the conductive pillars is increased, and the product reliability is improved.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: December 22, 2020
    Assignee: Siliconware Precision Industries Co., Ltd.
    Inventors: Yi-Cheih Chen, Sung-Huan Sun, Cheng-An Chang, Chien-Hung Wu, Fu-Tang Huang
  • Patent number: 10872968
    Abstract: A semiconductor device including a first fin field effect transistor and a second fin field effect transistor is provided. The first fin field effect transistor includes a first semiconductor channel, a first gate overlapped with the first semiconductor channel, a first dielectric layer disposed between the first semiconductor channel and the first gate, and a pair of first spacers disposed on sidewalls of the first gate. The second fin field effect transistor includes a second semiconductor channel, a second gate overlapped with the second semiconductor channel, a second dielectric layer disposed between the second semiconductor channel and the second gate, and a pair of second spacers. The second dielectric layer further extends between the second gate and the pair of second spacers, the first dielectric layer is thinner than the second dielectric layer, and a width of the first gate is smaller than that of the second gate.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: December 22, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Che-Cheng Chang, Chih-Han Lin, Horng-Huei Tseng
  • Publication number: 20200391033
    Abstract: The invention relates to an electrochemical dephosphorylation technique for treating Alzheimer's disease and a use thereof. It comprises a gold electrode provided with a negative potential of ?0.2 V to ?0.6 V on a surface thereof.
    Type: Application
    Filed: June 14, 2019
    Publication date: December 17, 2020
    Inventors: JUNG-CHIH CHEN, I-CHIU LI, KUN-CHE LI, CHING-CHENG CHUANG, MEI-LAN KO, HSIN-YU CHEN, CHIA-HSUAN CHANG, HSIN-YI TSAI, CHIEN-CHIH HSU
  • Publication number: 20200393715
    Abstract: Electrical shield line systems are provided for openings in common electrodes near data lines of display and touch screens. Some displays, including touch screens, can include multiple common electrodes (Vcom) that can have openings between individual Vcoms. Some display screens can have an open slit between two adjacent edges of Vcom. Openings in Vcom can allow an electric field to extend from a data line through the Vcom layer. A shield can be disposed over the Vcom opening to help reduce or eliminate an electric field from affecting a pixel material, such as liquid crystal. The shield can be connected to a potential such that electric field is generated substantially between the shield and the data line to reduce or eliminate electric fields reaching the liquid crystal.
    Type: Application
    Filed: August 28, 2020
    Publication date: December 17, 2020
    Inventors: Zhibing GE, Cheng-Ho YU, Young-Bae PARK, Abbas JAMSHIDI ROUDBARI, Shih-Chang CHANG, Cheng CHEN, Marduke YOUSEFPOR, John Z. ZHONG
  • Publication number: 20200392134
    Abstract: A method for purifying 2-[[2-[[[3-(4-Chlorophenyl)-8-methyl-8-azabicyclo[3.2.1]-oct-2-yl]methyl](2-mercaptoethyl)amino]ethyl]amino]ethanethiol-[1R-(exo-exo)]-hydrochloride is revealed. After medium pressure liquid chromatography and subsequent acid treatment, 2-[[2-[[[3-(4-Chlorophenyl)-8-methyl-8-azabicyclo[3.2.1]-oct-2-yl]methyl](2-mercaptoethyl)amino]ethyl]amino]ethanethiol-[1R-(exo-exo)]-hydrochloride with high purity is obtained. The method for purifying can solve the problem that the product purity is not up to the standard for radiopharmaceuticals.
    Type: Application
    Filed: May 12, 2020
    Publication date: December 17, 2020
    Inventors: SHOW-WEN LIU, CHENG-FANG HSU, WEI-HSI CHEN, YU CHANG