Abstract: Various embodiments of the present disclosure are directed towards a method for forming an image sensor in which a device layer has high crystalline quality. According to some embodiments, a hard mask layer is deposited covering a substrate. A first etch is performed into the hard mask layer and the substrate to form a cavity. A second etch is performed to remove crystalline damage from the first etch and to laterally recess the substrate in the cavity so the hard mask layer overhangs the cavity. A sacrificial layer is formed lining cavity, a blanket ion implantation is performed into the substrate through the sacrificial layer, and the sacrificial layer is removed. An interlayer is epitaxially grown lining the cavity and having a top surface underlying the hard mask layer, and a device layer is epitaxially grown filling the cavity over the interlayer. A photodetector is formed in the device layer.

Abstract: A semiconductor device includes a substrate; an interconnect structure over the substrate; a first passivation layer over the interconnect structure; a first conductive pad, a second conductive pad, and a conductive line disposed over the first passivation layer and electrically coupled to conductive features of the interconnect structure; a conformal second passivation layer over and extending along upper surfaces and sidewalls of the first conductive pad, the second conductive pad, and the conductive line; a first conductive bump and a second conductive bump over the first conductive pad and the second conductive pad, respectively, where the first conductive bump and the second conductive bump extend through the conformal second passivation layer and are electrically coupled to the first conductive pad and the second conductive pad, respectively; and a dummy bump over the conductive line, where the dummy bump is separated from the conductive line by the conformal second passivation layer.

Abstract: Some embodiments relate to an integrated circuit (IC) disposed on a silicon substrate, which includes a well region having a first conductivity type. An epitaxial pillar of SiGe or Ge extends upward from the well region. The epitaxial pillar includes a lower epitaxial region having the first conductivity type and an upper epitaxial region having a second conductivity type, which is opposite the first conductivity type. A dielectric layer is arranged over an upper surface of the substrate and is disposed around the lower epitaxial region to extend over outer edges of the well region. The dielectric layer has inner sidewalls that contact outer sidewalls of the epitaxial pillar. A dielectric sidewall structure has a bottom surface that rests on an upper surface of the dielectric layer and has inner sidewalls that extend continuously from the upper surface of the dielectric layer to a top surface of the epitaxial pillar.

Abstract: The present disclosure is generally directed to an open time additive composition that includes at least two, different open time additives having the structure of Compound I, a salt thereof, or both.

Abstract: A braking mechanism of a wheeled device is provided, including: a main body, configured to be connected to the wheeled device including at least one wheel; an adjusting member, disposed on the main body and including a rod and a first abutting member adjustably positioned on the rod; a braking member, movably disposed on the main body; and an elastic member, abutted between the first abutting member and the braking member so that the braking member is biased by the force of the elastic member toward the at least one wheel to frictionally contact the at least one wheel.

Abstract: In some embodiments, a method for forming a semiconductor device is provided. The method includes etching a substrate to form a recess within a surface of the substrate. An epitaxial material is formed within the recess, a capping structure is formed on the epitaxial material, and a capping layer is formed onto the capping structure. The capping layer laterally extends past an outermost sidewall of the capping structure. Dopants are implanted into the epitaxial material. Implanting the dopants into the epitaxial material forms a first doped region having a first doping type and a second doped region having a second doping type.

Abstract: An electrical connector including an insulating body, a metal shielding member disposed in the insulating body, a plurality of terminals disposed in the insulating body, and an outer shell sheathed on the insulating body is provided. The metal shielding member has a leading edge, a pair of side edges bordered at two opposite sides of the leading edge, a protrusion located at the leading edge, and a plurality of openings. The leading and the side edges are protruded out of the insulating body. The openings are located between the leading and the side edges, and are concentrated at positions near the leading edge. Portions of the insulating body penetrate the openings.

Abstract: A memory device includes a memory cell array and a memory controller. The memory cell array includes a plurality of memory blocks. Each of the memory blocks includes a plurality of word lines. A plurality of memory chunks is coupled to at least one of the word lines. The memory controller is configured to program data to a particular memory chunk of the plurality of memory chunks by performing a chunk operation that includes selecting a particular word line from the plurality of word lines, selecting a particular memory chunk from the plurality of memory chunks that are coupled to the particular word line, and applying a program voltage to a particular memory block corresponding to the particular memory chunk to program data to the particular memory chunk.

Abstract: A microbial carrier and a device for treating wastewater are provided. The microbial carrier includes a bacteriophilic material and a plurality of foam cells, wherein the foam cells are disposed in the bacteriophilic material. The bactericidal material is a reaction product of a composite, wherein the composition includes a hydrophobic polyvinyl alcohol and a cross-linking agent, wherein the surface energy of the hydrophobic polyvinyl alcohol is 30 mJ/m2 to 58 mJ/m2.

Abstract: A hydrophobic polyvinyl alcohol and a method for preparing hydrophobic polyvinyl alcohol are provided. The hydrophobic polyvinyl alcohol includes a first repeat unit represented by Formula (I), a second repeat unit represented by Formula (II), and a third repeat unit represented by Formula (III) wherein R1 is —Si(R2)3, R2 is independently C1-6 alkoxy group, C6-18 alkyl group, or C6-22 alkenyl group, and at least one R2 is C6-18 alkyl group or C6-22 alkenyl group; R3 and R4 are independently C6-18 alkyl group or C6-22 alkenyl group; j is 3 to 7; and k is 1 to 30.

Abstract: Systems and methods are provided for delivering images to a patient before and/or during a medical procedure in which a patient is translated on a table relative to a gantry. In various example embodiments, images are projected to the patient while preserving the projected field size during table motion, thereby potentially reducing patient anxiety by providing a more immersive patient viewing experience. In some embodiments, the projected field size is maintained by a display system that is secured to the table such that both a projector and a projection screen are fixed relative to the table, and relative to the patient, during translation of the table. In some example embodiments, a reduction in patient anxiety may be achieved by projecting images as virtual images that are perceived by the patient as residing at a depth that lies beyond the confined spatial region in which the patient resides.

Abstract: Treatment of dilated cardiomyopathy in a subject by combination treatment with a tyrosine kinase inhibitor and a statin.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an image sensor in which a device layer has high crystalline quality. According to some embodiments, a hard mask layer is deposited covering a substrate. A first etch is performed into the hard mask layer and the substrate to form a cavity. A second etch is performed to remove crystalline damage from the first etch and to laterally recess the substrate in the cavity so the hard mask layer overhangs the cavity. A sacrificial layer is formed lining cavity, a blanket ion implantation is performed into the substrate through the sacrificial layer, and the sacrificial layer is removed. An interlayer is epitaxially grown lining the cavity and having a top surface underlying the hard mask layer, and a device layer is epitaxially grown filling the cavity over the interlayer. A photodetector is formed in the device layer.

Abstract: Embodiments of the present disclosure provide an end-cloud collaborative media data processing method and apparatus, a device and a storage medium, where the method includes: calling a target processing flow in response to a first operation triggering a target functionality, where the target processing flow includes a local algorithm node and a remote algorithm node, and the target functionality is used for adding a special effect to media data to be processed; executing, based on the target processing flow, a corresponding local algorithm node and remote algorithm node to obtain first processing data output by the local algorithm node and second processing data output by the remote algorithm node; and generating third processing data through the first processing data and/or the second processing data.

Abstract: A device comprises a plurality of nanosheets, source/drain stressors, and a gate structure wrapping around the nanosheets. The nanosheets extend in a first direction above a semiconductor substrate and are arranged in a second direction substantially perpendicular to the first direction. The source/drain stressors are on either side of the nanosheets. Each of the source/drain stressors comprises a first epitaxial layer and a second epitaxial layer over the first epitaxial layer. The first and second epitaxial layers are made of a Group IV element and a Group V element. An atomic ratio of the Group V element to the Group IV element in the second epitaxial layer is greater than an atomic ratio of the Group V element to the Group IV element in the first epitaxial layer.

Abstract: A portable electronic device includes a first body, a second body, a hinge mechanism, a spring, and a cable extending from the first body to the second body. The second body is connected to the first body through the hinge mechanism. The first body has a first pillar, a second pillar, and a third pillar. The second pillar is located between the first pillar and the third pillar. The spring is disposed in the first body as corresponding to the second pillar. The cable includes a first winding segment extending through a gap between the first pillar and the second pillar, a second winding segment extending through a gap between the second pillar and the spring, and a third winding segment extending through a gap between the second pillar and the third pillar. Two ends of the spring are respectively connected to the first body and the second winding segment.

Abstract: A portable electronic device including a main display having a locking recess at a side edge and at least one external display detachable relative to the side edge of the main display is provided. The external display includes a body, and at least one latch pivoted to the body. The latch is pivoted to the body to be swiveled out of or into the body. An opening of the locking recess faces obliquely upward and faces away from a direction of gravity when the main display is standing, the at least one latch swiveled out of the body faces obliquely downward and faces forward the direction of gravity to be inserted into the locking recess, and the at least one external display is hung on at the side edge of the main display by a weight of the at least one external display.

Abstract: Embodiments of the present disclosure provide an end-cloud collaborative media data processing method and apparatus, a device and a storage medium, where the method includes: calling a target processing flow in response to a first operation triggering a target functionality, where the target processing flow includes a local algorithm node and a remote algorithm node, and the target functionality is used for adding a special effect to media data to be processed; executing, based on the target processing flow, a corresponding local algorithm node and remote algorithm node to obtain first processing data output by the local algorithm node and second processing data output by the remote algorithm node; and generating third processing data through the first processing data and/or the second processing data.