Abstract: A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).

Abstract: Nano-sized materials and/or polysilicon are formed using heat generated from a micro-heater, the micro-heater may include a substrate, a heating element unit formed on the substrate, and a support structure formed between the substrate and the heating element unit. Two or more of the heating element units may be connected in series.

Abstract: A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).

Abstract: Nano-sized materials and/or polysilicon are formed using heat generated from a micro-heater, the micro-heater may include a substrate, a heating element unit formed on the substrate, and a support structure formed between the substrate and the heating element unit. Two or more of the heating element units may be connected in series.

Abstract: Example embodiments provide micro-heaters including a heating section, a plurality of connecting sections, and a plurality of support structures. The heating section is on the substrate, separated from the substrate and extended in a longitudinal direction. The plurality of connecting sections are arranged at a distance from each other in the longitudinal direction of the heating section, and extended from two sides of the heating section in a perpendicular direction with respect to the longitudinal direction of the heating section. The plurality of support structures are formed between the substrate and the plurality of connecting sections, so as to support the heating section and the plurality of connecting sections from underneath the plurality of connecting sections.

Abstract: Example embodiments relate to an electrode having a transparent electrode layer, an opaque electrode layer formed on the transparent electrode layer and catalyst formed on an open surface on the transparent electrode layer, which open surface is not covered by the opaque electrode layer.

Abstract: A method for forming a silicon film may be performed using a microheater including a substrate and a metal pattern spaced apart from the substrate. The silicon film may be formed on the metal pattern by applying a voltage to the metal pattern of the microheater to heat the metal pattern and by exposing the microheater to a source gas containing silicon. The silicon film may be made of polycrystalline silicon. A method for forming a pn junction may be performed using a microheater including a substrate, a conductive layer on the substrate, and a metal pattern spaced apart from the substrate. The pn junction may be formed between the metal pattern and the conductive layer by applying a voltage to the metal pattern of the microheater to heat the metal pattern. The pn junction may be made of polycrystalline silicon.

Abstract: Nano-sized materials and/or polysilicon are formed using heat generated from a micro-heater, the micro-heater may include a substrate, a heating element unit formed on the substrate, and a support structure formed between the substrate and the heating element unit. Two or more of the heating element units may be connected in series.

Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.

Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.

Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.

Abstract: Example embodiments include micro-heater arrays including first and second micro-heaters disposed perpendicular to or parallel with each other on a substrate and methods of fabricating pn junctions between first and second heating portions using the heat generated from the first and second heating portions, respectively, when applying a voltage to the micro-heater array. Accordingly, when forming pn junctions using micro-heaters, a high-quality pn junction may be fabricated on a glass substrate over a large area.

Abstract: Example embodiments relate to an electrode having a transparent electrode layer, an opaque electrode layer formed on the transparent electrode layer and catalyst formed on an open surface on the transparent electrode layer, which open surface is not covered by the opaque electrode layer.

Abstract: Disclosed is an electrode having a transparent electrode layer, an opaque electrode layer formed on the transparent electrode layer and catalyst formed on an open surface on the transparent electrode layer, which open surface is not covered by the opaque electrode layer.

Abstract: A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).

Abstract: Provided is an electrohydrodynamic (EHD) micro-pump and a method of operating the same. The EHD micro-pump includes a plurality of electrodes alternately disposed on a substrate, an insulating layer covering the electrodes on the substrate, a carbon nanotube (CNT) layer formed on the insulating layer, a cover that forms a chamber with the substrate to accommodate the plurality of electrodes on the substrate where the cover includes a fluid inlet and a fluid outlet, an upper electrode formed on an inner surface of the cover facing the plurality of electrodes, and a power supplier that applies a voltage to the plurality of electrodes.

Abstract: A micro-heater according to example embodiments may include a substrate, a metal pattern, and a passivation layer. The metal pattern may be spaced apart from the substrate. The passivation layer may be on the metal pattern and made of a solid solution including a material constituting the metal pattern. Alternatively, the passivation layer may be on the substrate and the metal pattern. A method for manufacturing a micro-heater according to example embodiments may include arranging a metal pattern so as to be spaced apart from a substrate. A first passivation layer may be formed on the substrate and the metal pattern. A voltage may be applied to the metal pattern to heat the metal pattern. As a result, a material constituting the metal pattern may diffuse into the first passivation layer to form a second passivation layer.

Abstract: A method for forming a silicon film may be performed using a microheater including a substrate and a metal pattern spaced apart from the substrate. The silicon film may be formed on the metal pattern by applying a voltage to the metal pattern of the microheater to heat the metal pattern and by exposing the microheater to a source gas containing silicon. The silicon film may be made of polycrystalline silicon. A method for forming a pn junction may be performed using a microheater including a substrate, a conductive layer on the substrate, and a metal pattern spaced apart from the substrate. The pn junction may be formed between the metal pattern and the conductive layer by applying a voltage to the metal pattern of the microheater to heat the metal pattern. The pn junction may be made of polycrystalline silicon.

Abstract: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the first and second micro-heaters. The solar cell has improved efficiency because sunlight with various wavelengths may be effectively absorbed by the plurality of InxGa1-xN p-n junction layers. Furthermore, relatively large-sized solar cells may be fabricated, because the plurality of InxGa1-xN p-n junction layers may be formed on a glass substrate using a micro-heater array.

Abstract: Example embodiments include micro-heater arrays including first and second micro-heaters disposed perpendicular to or parallel with each other on a substrate and methods of fabricating pn junctions between first and second heating portions using the heat generated from the first and second heating portions, respectively, when applying a voltage to the micro-heater array. Accordingly, when forming pn junctions using micro-heaters, a high-quality pn junction may be fabricated on a glass substrate over a large area.