Patents by Inventor Andres Cuevas

Andres Cuevas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11852225
    Abstract: A core ring for a torque converter is disclosed herein. The core ring includes a plurality of through openings and a plurality of recesses each connected to a respective through opening of the plurality of through openings. The recesses are each dimensioned to receive a portion of a blade, and specifically a blade tip formed on an adjacent torque converter component.
    Type: Grant
    Filed: May 2, 2022
    Date of Patent: December 26, 2023
    Assignee: Schaeffler Technologies AG & Co. KG
    Inventors: Diego Alejandro Ledesma, Andres Cuevas, Juan Pablo Cazares
  • Publication number: 20230349455
    Abstract: A core ring for a torque converter is disclosed herein. The core ring includes a plurality of through openings and a plurality of recesses each connected to a respective through opening of the plurality of through openings. The recesses are each dimensioned to receive a portion of a blade, and specifically a blade tip formed on an adjacent torque converter component.
    Type: Application
    Filed: May 2, 2022
    Publication date: November 2, 2023
    Applicant: SCHAEFFLER TECHNOLOGIES AG & CO. KG
    Inventors: Diego Alejandro Ledesma, Andres Cuevas, Juan Pablo Cazares
  • Publication number: 20230197876
    Abstract: The invention relates to a process for fabricating a solar cell. The process comprises depositing a layer of amorphous silicon on a substrate using physical vapour deposition, said substrate being a layer of a dielectric disposed on a silicon wafer. The amorphous silicon is then annealed so as to generate a layer of polycrystalline silicon on the substrate.
    Type: Application
    Filed: December 5, 2017
    Publication date: June 22, 2023
    Inventors: Di Yan, Andres Cuevas
  • Publication number: 20150136211
    Abstract: A photovoltaic device includes a first semiconducting area having an N-doped silicon base and a second semiconducting area having a P-doped silicon base. The two semiconducting areas are configured to form a PN junction. The first semiconducting area is devoid of boron and includes a concentration of P-type doping impurities that is at least equal to 20% of the concentration of N-type doping impurities.
    Type: Application
    Filed: February 28, 2013
    Publication date: May 21, 2015
    Inventors: Maxime Forster, Roland Einhaus, Andres Cuevas