Abstract: An apparatus for providing support to an elongated medical device is provided between a first device module and a second device module coupled to a linear member of a robotic drive for a catheter-based procedure system. The second device module is located in a position along the linear member distal to the first device module. The apparatus includes a device support having a distal end and a proximal end. A section of the device support is positioned within the first device module. The apparatus also includes a connector attached to the distal end of the device support. The connector includes an attachment mechanism for engaging a proximal end of the second device module. The proximal end of the device support is configured to be coupled to the second device module.

Abstract: An EMD drive system includes an on-device adapter removably fixed to a shaft of an EMD. The on-device adapter received in a cassette. The cassette is removably secured to a drive module. The drive module is operatively coupled to the on-device adapter to move the on-device adapter and EMD together.

Abstract: A system for controlling a catheter-based procedure system that includes a robotic drive configured to control rotational motion and axial motion of one or more elongated medical devices may include a body, a first control coupled to the body, and a second control coupled to the body. First control is configured to instruct the robotic drive to axially move one of the one or more elongated medical devices in response to manipulation of the first control by a user, and the second control is configured to instruct the robotic drive to rotate one of the one or more elongated medical devices in response to manipulation of the second control by the user, wherein the first control and the second control are positioned on the body so the first control and the second control can be simultaneously manipulated by a first digit and a second digit on a hand of the user.

Abstract: A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.

Abstract: A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.

Abstract: A sputtering system may include a substrate. The sputtering system may include at least one target. The at least one target may include at least one coating material to coat at least one layer onto the substrate. The at least one coating material may be sputtered onto the substrate in a presence of an inert gas. The inert gas may include argon gas and helium gas.

Abstract: Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

Abstract: A device may include one or more memories and one or more processors, communicatively coupled to the one or more memories, to receive design information, wherein the design information identifies desired values for a set of layers of an optical element to be generated during one or more runs; receive or obtain historic information identifying a relationship between a parameter for the one or more runs and an observed value relating to the one or more runs or the optical element; determine layer information for the one or more runs based on the historic information, wherein the layer information identifies run parameters, for the set of layers, to achieve the desired values; and cause the one or more runs to be performed based on the layer information.

Abstract: A layered structure (100) for transmission of an acoustic wave, the layered structure (100) comprising: a substrate layer (102); and a second layer (104) over the substrate layer (102), wherein the second layer (104) comprises a plurality of discrete portions (105) adjacent to each other, each discrete portion (105) of the plurality of discrete portions (105) comprising a first subregion (104A) and a second subregion (104B). Also an epitaxial layer (108), grown over the second layer (104), for transmission of the acoustic wave in a major plane of the epitaxial layer (108), wherein a periodicity (?) of a wavelength of the acoustic wave to be transmitted through the epitaxial layer (108) is approximately equal to a sum of a width (dA) of the first subregion (104A) and a width (dB) of the second subregion (104B).

Abstract: The present invention relates to methods for processing jobs within a cluster architecture. One method comprises the pausing of a job when waiting upon external dependencies. Another method comprises the transmission of messages relating to the ongoing processing of jobs back to a client via a persistent messaging channel. Yet another method comprises determining capacity at a node before allocating a job for processing by the node or adding the job to a cluster queue. A system for processing jobs within a cluster architecture is also disclosed.

Abstract: A sputtering system may include a substrate. The sputtering system may include at least one target. The at least one target may include at least one coating material to coat at least one layer onto the substrate. The at least one coating material may be sputtered onto the substrate in a presence of an inert gas. The inert gas may include argon gas and helium gas.

Abstract: A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.

Abstract: A UVA/UVC system for reducing levels, on a surface, and inhibiting further growth of at least one pathogen on said surface, wherein said system has no deleterious effects on a human, in particular on a human eye or epidermis and dermis, wherein said system includes: iv) at least one UVA light source; v) at least one UVC light source; and at least one controller connected to each of the at least one UVA light source and the at least one UVC light source, for controlling at least one parameter of each of the UVA light source and UVC light source.

Abstract: Systems and methods are described herein to grow a layered structure. The layered structure is implemented as a VCSEL and comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer comprises a compound of a first constituent and a second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer comprises a compound of a third constituent and a fourth constituent, wherein the first, second, third and fourth constituents are selected such that the layered structure is pseudomorphic and the first lattice constant is between the second lattice constant and the third lattice constant.

Abstract: A wake-up radio system in a wireless sensor network, the wake-up radio comprising: an analog front end configured to communicate with matching network; an analog to digital converter coupled to the analog front end; and a digital baseband coupled to the analog to digital converter, wherein the digital baseband outputs a fast wake-up signal and a secure wake-up signal, and wherein the wake-up radio listens to all channels simultaneously.

Abstract: Techniques are disclosed herein for resolving a natural language query. Input (e.g., text input, audio input) corresponding to a query requesting data is received. A type of the query is determined based on a natural language analysis on the query. A form of response to the query is identified based on the type of the query. A visualization associated with the form of response is identified. The visualization is presented via a user interface. The presented visualization includes the requested data.

Abstract: The present invention relates to methods for processing jobs within a cluster architecture. One method comprises the pausing of a job when waiting upon external dependencies. Another method comprises the transmission of messages relating to the ongoing processing of jobs back to a client via a persistent messaging channel. Yet another method comprises determining capacity at a node before allocating a job for processing by the node or adding the job to a cluster queue. A system for processing jobs within a cluster architecture is also disclosed.

Abstract: In view of the high-temperature issues in III-N layer growth process, embodiments described herein use layered structure including a rare earth oxide (REO) or rare earth nitride (REN) buffer layer and a polymorphic III-N-RE transition layer to transit from a REO layer to a III-N layer. In some embodiments, the piezoelectric coefficient of III-N layer is increased by introduction of additional strain in the layered structure. The polymorphism of RE-III-N nitrides can then be used for lattice matching with the III-N layer.

Abstract: Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.

Abstract: Systems and methods are described herein for growing epitaxial metal oxide as buffer for epitaxial III-V layers. A layer structure includes a base layer and a first rare earth oxide layer epitaxially grown over the base layer. The first rare earth oxide layer includes a first rare earth element and oxygen, and has a bixbyite crystal structure. The layer structure also includes a metal oxide layer epitaxially grown directly over the first rare earth oxide layer. The metal oxide layer includes a first cation element selected from Group III and oxygen, and has a bixbyite crystal structure.