Abstract: A method for etching a surface including obtaining a structure comprising a plurality of nanowires on or above a substrate and a dielectric layer on or above the nanowires, wherein the dielectric layer comprises protrusions formed by the underlying nanowires; reacting a surface of the dielectric layer with a reactant, comprising a gas or a plasma, to form a reactive layer on the dielectric layer, wherein the reactive layer comprises a chemical compound including the reactant and elements of the dielectric layer and the reactive layer comprises sidewalls defined by the protrusions; and selectively etching the reactive layer, wherein the etching etches the protrusions laterally through the sidewalls so as to planarize the surface and remove or shrink the protrusions.

Abstract: A packaging unit includes a carton having top and bottom surfaces and side walls extending between said top and bottom surfaces. The unit further includes molded pulp fiber bottom and top trays, with each tray defining a plurality of securement chambers. The unit further includes a self-adjustable, middle dunnage including a main body disposed between the molded fiber bottom and top trays. The main body includes a plurality of holes extending through the main body and a plurality of slots extending from a perimeter of each of the holes to define a plurality of self-adjustable tabs surrounding each of the holes. The middle dunnage further includes a first plurality of foldable flaps extending from the main body towards the bottom surface and a second plurality of foldable flaps extending the main body towards the top surface of the carton.

Abstract: A method for etching a surface including obtaining a structure comprising a plurality of nanowires on or above a substrate and a dielectric layer on or above the nanowires, wherein the dielectric layer comprises protrusions formed by the underlying nanowires; reacting a surface of the dielectric layer with a reactant, comprising a gas or a plasma, to form a reactive layer on the dielectric layer, wherein the reactive layer comprises a chemical compound including the reactant and elements of the dielectric layer and the reactive layer comprises sidewalls defined by the protrusions; and selectively etching the reactive layer, wherein the etching etches the protrusions laterally through the sidewalls so as to planarize the surface and remove or shrink the protrusions.