Abstract: A semiconductor memory cell whose supply voltage is decoupled from the cell voltage bus during a write operation. Automatic return of the bus to the supply voltage level once the static state is reached, even though a write command is still present, is achieved by supplying operating voltage to the cell bus from one of the data lines via a conducting transistor.

Abstract: A silicon-gate insulated gate field effect transistor device has a thick field oxide in contiguous surrounding relation to its gate electrode and with a surface coplanar with or slightly higher than the surface of the gate electrode, thus facilitating crossovers and contacts to the gate electrode. The method of making this device includes forming a self-aligned silicon gate structure on a silicon wafer, masking the gate structure against the diffusion of oxygen, and thereafter oxidizing the silicon wafer to grow a thick silicon dioxide layer in surrounding relation to the silicon gate structure.