Patents by Inventor Andrew K. Mackenzie

Andrew K. Mackenzie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of fabricating nitride-based transistors with an ETCH stop layer
    Patent number: 9142636
    Abstract: A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.
    Type: Grant
    Filed: May 13, 2013
    Date of Patent: September 22, 2015
    Assignee: Cree, Inc.
    Inventors: Scott T. Sheppard, Andrew K. Mackenzie, Scott T. Allen, Richard P. Smith
  • METHODS OF FABRICATING NITRIDE-BASED TRANSISTORS WITH AN ETCH STOP LAYER
    Publication number: 20130252386
    Abstract: A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.
    Type: Application
    Filed: May 13, 2013
    Publication date: September 26, 2013
    Applicant: Cree, Inc.
    Inventors: Scott T. Sheppard, Andrew K. Mackenzie, Scott T. Allen, Richard P. Smith