Abstract: An embodiment in accordance with the present invention provides an implanted catheter and an external device that the patient uses to inject a therapeutic into the implanted tube. The implanted catheter can be equipped with a fixation mechanism that secures the catheter in place and eases physician insertion and removal. The fixation mechanism can include shape memory arms having silicone tips or can be a second catheter branch configured to hold the device in the user's sinus cavity. The catheter can also include numerous exit holes to prevent obstruction and deliver the therapeutic. An interface between the implanted catheter and the external device is incorporated, to ensure a reliable seal for medication passage. A method and device for delivery of the catheter to the correct position can also be included.

Abstract: An embodiment in accordance with the present invention provides an implanted catheter and an external device that the patient uses to inject a therapeutic into the implanted tube. The implanted catheter can be equipped with a fixation mechanism that secures the catheter in place and eases physician insertion and removal. The fixation mechanism can include shape memory arms having silicone tips or can be a second catheter branch configured to hold the device in the user's sinus cavity. The catheter can also include numerous exit holes to prevent obstruction and deliver the therapeutic. An interface between the implanted catheter and the external device is incorporated, to ensure a reliable seal for medication passage. A method and device for delivery of the catheter to the correct position can also be included.

Abstract: A wafer 2 is supported polished (active) face down in a recess formed in the upper surface of a second wafer 4 which serves as a wafer support. The two wafers 2, 4 are disposed in an atmosphere of steam at 900.degree. C. at a pressure of 500 psi which results in forming an oxide on the polished face of the wafer 2.

Abstract: In a low-pressure reactor, the addition of nitrogen trifluoride to a gaseous organosilicon compound such as tetraethoxysilane (TEOS) or tetramethylcyclotetroxysilane (TMCTS) results in surprisingly enhanced silicon dioxide deposition rates. The oxide deposited using this process also has the capability of filling features having aspects ratios up to at least 1.0, and may exhibit low mobile ion concentrations. The process is also applicable for depositing other silicon-containing films such as polysilicon and silicon nitride.