Abstract: The disclosure recognizes that it is better to not start monitoring a controllable process than to monitor that process with an optical instrument, such as a process controlling instrument/sensor, when that optical instrument is not operating properly. Accordingly, the disclosure relates to novel features for checking that an optical instrument, such as a spectrometer, is working properly before being used to monitor a semiconductor process. In one aspect the disclosure provides a system for evaluation and verification of an operational state of an optical instrument. In one example, the system includes: (1) an integrated light source, (2) an optical sensor for collecting light from the integrated light source, (3) a controller controlling the integrated light source and the optical sensor, and (4) a processor for processing collected optical signal data obtained from the light and deriving a metric indicative of the operational state.

Abstract: An optical instrument of very high resolution is provided that can be used for monitoring semiconductor processes. Very high resolution may be considered in this application space to be resolutions sufficient to permit resolving of individual molecular rovibrational emission lines. In one example an optical instrument is provided that includes: (1) an optical interface that receives an optical fiber, (2) a narrow band pass filter that filters out a portion of an optical signal received via the optical fiber, (3) optical components that are selectively combined to process at least a portion of the unfiltered optical signal, wherein the optical components include a sensor that receives the unfiltered optical signal, and (4) one or more processors that process electrical signals from the sensor. The optical instrument can be a spectrometer suitable for a process control instrument.

Abstract: A system and method of use for simplifying the measurement of various properties of complex semiconductor structures is provided. The system and method supports reduction of structure complexity and modeling for optical monitoring and permits determination of film thicknesses and feature depths during semiconductor manufacturing processes.

Abstract: The disclosure provides an optical calibration device for in-chamber calibration of optical signals associated with a processing chamber, a characterization system for plasma processing chambers, methods of characterizing plasma processing chambers, and a chamber characterizer. In one example, the optical calibration device includes: (1) an enclosure, (2) an optical source located within the enclosure and configured to provide a source light having a continuous spectrum, and (3) optical shaping elements located within the enclosure and configured to form the source light into a calibrating light that approximates a plasma emission during an operation within the processing chamber.

Abstract: A system and method of use for simplifying the measurement of various properties of complex semiconductor structures is provided. The system and method supports reduction of structure complexity and modeling for optical monitoring and permits determination of film thicknesses and feature depths during semiconductor manufacturing processes.

Abstract: The present invention is directed to a gas line electron beam exciter, gas line electron beam excitation system and method for exciting a gas using an electron beam exciter. The electron beam exciter generally comprises a variable density electron source for generating a cloud of electrons in an electron chamber and a variable energy electron extractor for accelerating electrons from the electron chamber as an electron beam and into an effluent stream for fluorescing species in the effluent. The electron density of the electron beam is variably controlled by adjusting the excitation power applied to the variable density electron source. The electrons in the electron chamber reside at a reference electrical potential of the chamber, typically near ground electrical potential.

Abstract: The disclosure provides an optical calibration device for in-chamber calibration of optical signals associated with a processing chamber, a characterization system for plasma processing chambers, methods of characterizing plasma processing chambers, and a chamber characterizer. In one example, the optical calibration device includes: (1) an enclosure, (2) an optical source located within the enclosure and configured to provide a source light having a continuous spectrum, and (3) optical shaping elements located within the enclosure and configured to form the source light into a calibrating light that approximates a plasma emission during an operation within the processing chamber.

Abstract: A referenced and stabilized optical measurement system includes a light source, a plurality of optical elements and optical fiber assemblies and a detector arranged to compensate for the effects of system variation which may affect measurement performance. A non-continuous light source provides a common source light on a common source path. A reference light and a measurement light are derived from the common source light and propagated across separate paths of optically matching optical components in order to produce a common signal variation on both the reference light signal and the measurement light signal. Light paths exposed to air are contained indiscrete volumes for purging gasses from the volumes. Ratios of the reference signal and measurement signal are acquired under various conditions for compensating the measurement signal for system variations.

Abstract: A workpiece characterization system for obtaining simultaneous measurement of layer and photoluminescence properties of a workpiece. The workpiece characterization system includes an excitation light and an illumination light each impinging upon a surface of a workpiece whereby the workpiece emits photoluminescent light and encodes light from said illumination source with layer information. The excitation light and the illumination light are generated from a single light source. The light from the single light source is filtered to remove wavelengths of light that correlate to light wavelengths emitted from the workpiece as a result of excitation. Wavelengths that correlate to light reflected from the workpiece that may contain encoded information are not filtered.

Abstract: The present invention is directed to an apparatus, method and software product for enhancing the dynamic range of a CCD sensor without substantially increasing the noise. Initially, the area of a N×M pixel CCD sensor array is subdivided into two regions, a large region having (M?a) pixels in each column for outputting large-amplitude signals with low noise and a smaller region having a pixels in each column for outputting small-amplitude signals with improved dynamic range. At integration time, the CCD is read out one region's rows at a time into the horizontal shift registers by shifting the pixel charges in either a or M?a vertical shifts. The charges in the horizontal shift registers are then shifted out of the horizontal shift registers in N horizontal shifts. Next, the remaining pixels in the region of the CCD are read out into the horizontal shift registers by shifting the pixel charges in the other of a or M?a vertical shifts.

Abstract: Emitted light from a pulsed plasma system is detected, amplified and digitized over a plurality of pulse modulation cycles to produce a digitized signal over the plurality of RF modulation periods, each of which contains an amount of random intensity variations. The individual signal periods are then mathematically combined to produce a stable local reference waveform signal that has decreased random intensity variations. One mechanism for creating a stable local reference waveform signal is by subdividing each of the individual signal periods into a plurality of subunits and the mathematically averaging the respective subunits within the modulation period to produce the stable local reference waveform signal for the modulation period. The stable local reference waveform signal can then be compared to other instantaneous waveform signals from the pulsed plasma system, or waveform parameters can be derived using various signal processing techniques such as Fourier analysis.

Abstract: A referenced and stabilized optical measurement system includes a light source, a plurality of optical elements and optical fiber assemblies and a detector arranged to compensate for the effects of system variation which may affect measurement performance. A non-continuous light source provides a common source light on a common source path. A reference light and a measurement light are derived from the common source light and propagated across separate paths of optically matching optical components in order to produce a common signal variation on both the reference light signal and the measurement light signal. Light paths exposed to air are contained indiscrete volumes for purging gasses from the volumes. Ratios of the reference signal and measurement signal are acquired under various conditions for compensating the measurement signal for system variations.

Abstract: A configurable hybrid superheterodyne spectrum analyzer for deriving process state parameters from detected modulated light emitted by a plasma receives and conditions the electric signals converted from the modulated light for subsequent superheterodyne mixing at a specific intermediate frequency (IF) that is lower than the frequency of the modulated light. Signal conditioning includes filtering noise, aliasing and DC and/or amplifying or de-amplifying the signal. Once mixed, the superheterodyne signal is further filtered by an IF filter to define the signal bandwidth characteristics relevant to the process state parameters. The IF filter may configurably employ multiple filter functions such as Gaussian filtering of increasing widths and/or comb filtering for multiple passbands in the frequency spectrum. Finally, the IF mixed and filtered signal is digitized with respect to the specific intermediate frequency using an IF digitizer.

Abstract: A workpiece characterization system for obtaining simultaneous measurement of layer and photoluminescence properties of a workpiece. The workpiece characterization system includes an excitation light and an illumination light each impinging upon a surface of a workpiece whereby the workpiece emits photoluminescent light and encodes light from said illumination source with layer information. The excitation light and the illumination light are generated from a single light source. The light from the single light source is filtered to remove wavelengths of light that correlate to light wavelengths emitted from the workpiece as a result of excitation. Wavelengths that correlate to light reflected from the workpiece that may contain encoded information are not filtered.

Abstract: The present invention is directed to a system and method for radiometric calibration of spectroscopy equipment utilized in fault detection and process monitoring. Initially, a reference spectrograph is calibrated to a local primary standard (a calibrated light source with known spectral intensities and traceable to a reference standard). Other spectrographs are then calibrated from the reference spectrograph rather than the local primary calibration standard. This is accomplished by viewing a light source with both the reference spectrograph and the spectrograph to be calibrated. The output from the spectrograph to be calibrated is compared to the output of the reference spectrograph and then adjusted to match that output. The present calibration process can be performed in two stages, the first with the spectrographs calibrated to the reference spectrograph and then are fine tuned to a narrow band light source at the plasma chamber.

Abstract: A workpiece characterization system for obtaining simultaneous measurement of layer and photoluminescence properties of a workpiece. The workpiece characterization system includes an excitation light and an illumination light each impinging upon a surface of a workpiece whereby the workpiece emits photoluminescent light and encodes light from said illumination source with layer information. The excitation light and the illumination light are generated from a single light source. The light from the single light source is filtered to remove wavelengths of light that correlate to light wavelengths emitted from the workpiece as a result of excitation. Wavelengths that correlate to light reflected from the workpiece that may contain encoded information are not filtered.

Abstract: The present invention is directed to a gas line electron beam exciter, gas line electron beam excitation system and method for exciting a gas using an electron beam exciter. The electron beam exciter generally comprises a variable density electron source for generating a cloud of electrons in an electron chamber and a variable energy electron extractor for accelerating electrons from the electron chamber as an electron beam and into an effluent stream for fluorescing species in the effluent. The electron density of the electron beam is variably controlled by adjusting the excitation power applied to the variable density electron source. The electrons in the electron chamber reside at a reference electrical potential of the chamber, typically near ground electrical potential.

Abstract: The present invention is directed to a system and method for radiometric calibration of spectroscopy equipment utilized in fault detection and process monitoring. Initially, a reference spectrograph is calibrated to a local primary standard (a calibrated light source with known spectral intensities and traceable to a reference standard). Other spectrographs are then calibrated from the reference spectrograph rather than the local primary calibration standard. This is accomplished by viewing a light source with both the reference spectrograph and the spectrograph to be calibrated. The output from the spectrograph to be calibrated is compared to the output of the reference spectrograph and then adjusted to match that output. The present calibration process can be performed in two stages, the first with the spectrographs calibrated to the reference spectrograph and then are fine tuned to a narrow band light source at the plasma chamber.

Abstract: The present invention is directed to a heterodyne reflectometer system and method for obtaining highly accurate phase shift information from heterodyned optical signals, from which extremely accurate film depths can be calculated. A linearly polarized light comprised of two linearly polarized components that are orthogonal to each other, with split optical frequencies, is directed toward a film causing one of the optical polarization components to lag behind the other due to an increase in the optical path in the film for that component. A pair of detectors receives the beam reflected from the film layer and produces a measurement signal, and the beam prior to incidence on the film layer and generates a reference signal, respectively. The measurement signal and reference signal are analyzed by a phase detector for phase shift. The detected phase shift is then fed into a thickness calculator for film thickness results.

Abstract: The present invention is directed to a system, method and software program product for calculating metrological data (e.g. layer thicknesses and depths of recesses and trenches) on a surface or structure, such as a semiconductor wafer. The present method does not require knowledge of the reflectivity or transmissivity of the surface or structure, but only a quantity related to the reflectivity or transmissivity linear transformation needs to be known. Initially, a simplified optical model for the process is constructed using as many parameters as necessary for calculating the surface reflectivity of the discrete regions on the wafer. Reflectivity data are collected from the surface of a wafer using, for instance, in-situ monitoring, and nominal reflectivity is determined from the ratio of the current spectrum to a reference spectrum. The reference spectrum is taken from a reference wafer consisting entirely of a material in which the reflection properties are well characterized.