Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

Abstract: There are provided compounds of formula I: wherein k, m, n, p, R, R?, R?, R??, R3, R4, R7 and R8 are as defined in the application. Other embodiments are also disclosed.

Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: There are provided compounds of formula I: wherein k, m, n, p, R, R?, R?, R??, R3, R4, R7 and R8 are as defined in the application. Other embodiments are also disclosed.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

Abstract: There are provided compounds of formula I: wherein k, m, n, p, R, R?, R?, R??, R3, R4, R7 and R8 are as defined in the application. Other embodiments are also disclosed.

Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration and the wafers may be mounted at a small angle to the plane of the wafer carrier plates, wherein the wafers are configured in pairs along the direction of gas flow and wherein along the direction of gas flow the angular mounting of the wafers provides a smaller gap between opposed wafer surfaces on said parallel wafer carrier plates in the center of said wafer sleeve than at the periphery of said wafer sleeve.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: There are provided compounds of formula I: wherein k, m, n, p, R, R?, R?, R??, R3, R4, R7 and R8 are as defined in the application. Other embodiments are also disclosed.

Abstract: A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a centrally positioned longitudinal strip and first and second side reflectors to form a parabolic-type surface. The longitudinal strip and first and second side reflectors have curved reflective surfaces with dichroic coatings and the longitudinal strip comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a centrally positioned longitudinal strip and first and second side reflectors to form a parabolic-type surface. The longitudinal strip and first and second side reflectors have curved reflective surfaces with dichroic coatings and the longitudinal strip comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.

Abstract: A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a longitudinal strip extending the length of the ultraviolet lamp. The longitudinal strip has a curved reflective surface and comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.