Patents by Inventor Angus Hsiao

Angus Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of semiconductor device fabrication
    Patent number: 11037787
    Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate, forming a hard mask (HM) layer over the dielectric layer, forming a fin trench through the HM layer and the dielectric layer and extending down to the substrate, forming a semiconductor feature in the fin trench and removing the HM layer to expose an upper portion of the semiconductor feature to form fin features.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: June 15, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsung-Yao Wen, Angus Hsiao
  • Method of Semiconductor Device Fabrication
    Publication number: 20200043735
    Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate, forming a hard mask (HM) layer over the dielectric layer, forming a fin trench through the HM layer and the dielectric layer and extending down to the substrate, forming a semiconductor feature in the fin trench and removing the HM layer to expose an upper portion of the semiconductor feature to form fin features.
    Type: Application
    Filed: October 14, 2019
    Publication date: February 6, 2020
    Inventors: Tsung-Yao Wen, Angus Hsiao
  • Method of semiconductor device fabrication
    Patent number: 10446396
    Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate, forming a hard mask (HM) layer over the dielectric layer, forming a fin trench through the HM layer and the dielectric layer and extending down to the substrate, forming a semiconductor feature in the fin trench and removing the HM layer to expose an upper portion of the semiconductor feature to form fin features.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: October 15, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsung-Yao Wen, Angus Hsiao
  • Method of Semiconductor Device Fabrication
    Publication number: 20190252189
    Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate, forming a hard mask (HM) layer over the dielectric layer, forming a fin trench through the HM layer and the dielectric layer and extending down to the substrate, forming a semiconductor feature in the fin trench and removing the HM layer to expose an upper portion of the semiconductor feature to form fin features.
    Type: Application
    Filed: April 23, 2019
    Publication date: August 15, 2019
    Inventors: Tsung-Yao Wen, Angus Hsiao
  • Method of semiconductor device fabrication
    Patent number: 10276380
    Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate, forming a hard mask (HM) layer over the dielectric layer, forming a fin trench through the HM layer and the dielectric layer and extending down to the substrate, forming a semiconductor feature in the fin trench and removing the HM layer to expose an upper portion of the semiconductor feature to form fin features.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: April 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsung-Yao Wen, Angus Hsiao
  • Method of Semiconductor Device Fabrication
    Publication number: 20160111286
    Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate, forming a hard mask (HM) layer over the dielectric layer, forming a fin trench through the HM layer and the dielectric layer and extending down to the substrate, forming a semiconductor feature in the fin trench and removing the HM layer to expose an upper portion of the semiconductor feature to form fin features.
    Type: Application
    Filed: October 17, 2014
    Publication date: April 21, 2016
    Inventors: Tsung-Yao Wen, Angus Hsiao