Abstract: A removable, reusable cover constructed such that its geometry matches the geometry of the active region of a projection electron lithography mask to be protected and does not etch in the plasma environment used to remove a photoresist. The cover protects the active region of the projection electron lithography mask, but does not contact the active region. A technique for fabricating a projection electron lithography mask utilizing the removable, reusable cover, where the geometry of the cover is matched to the geometry of an active region of the projection electron lithography mask to be protected. During fabrication of the projection electron lithography mask, the cover protects the active region of the projection electron lithography mask from the plasma environment, but does not contact the active region.

Abstract: A removable, reusable cover constructed such that its geometry matches the geometry of the active region of a projection electron lithography mask to be protected and does not etch in the plasma environment used to remove a photoresist. The cover protects the active region of the projection electron lithography mask, but does not contact the active region. A technique for fabricating a projection electron lithography mask utilizing the removable, reusable cover, where the geometry of the cover is matched to the geometry of an active region of the projection electron lithography mask to be protected. During fabrication of the projection electron lithography mask, the cover protects the active region of the projection electron lithography mask from the plasma environment, but does not contact the active region.

Abstract: A removable, reusable cover constructed such that its geometry matches the geometry of the active region of a projection electron lithography mask to be protected and does not etch in the plasma environment used to remove a photoresist. The cover protects the active region of the projection electron lithography mask, but does not contact the active region. A technique for fabricating a projection electron lithography mask utilizing the removable, reusable cover, where the geometry of the cover is matched to the geometry of an active region of the projection electron lithography mask to be protected. During fabrication of the projection electron lithography mask, the cover protects the active region of the projection electron lithography mask from the plasma environment, but does not contact the active region.

Abstract: A procedure for producing an article such as an integrated circuit or a lithographic mask including the step of exposing and developing a resist material during a lithographic process is substantially improved by utilizing a specific technique. In particular, a prototypical plot is made based on typical conditions. Thereafter, this calibration is employable for developing the resist material even at substantially different environmental and processing conditions.

Abstract: Resist materials sensitive to actinic radiation are formed from an acid generator and a material sensitive to acid. The acid from the acid generator interacts with the acid sensitive material to produce a change in solubility. Particularly useful acid generators included benzyl and naphthylmethyl sulfones.

Abstract: The sensitivity and dry etching pattern control of chemically amplified resists used in the production of devices such as electronic devices is substantially enhanced while image quality is improved through use of a specific expedient. In particular, the resist material after coating on the device substrate, is treated, e.g., heated to sufficiently high temperatures, to remove a portion of the protective groups on the polymeric component of the resist. Generally, when removal up to approximately 90% of the protective groups for substituents such as t-butoxycarboxyl is effected through this procedure, sensitivities as good as 10 mJ/cm.sup.2 for an X-ray exposure (.lambda.=14.ANG.) have been achieved, and both the image quality and dry etching pattern control are improved.

Abstract: A one component resist material useful for deep ultraviolet, x-ray, and electron radiation has been found. Such material involves a substituent that is sensitive to acid and a moiety in the chain which both induces scission and provides an acid functionally upon such scission.

Abstract: Polymers formed from monomers such as chloromethyl styrene and trimethylgermylmethyl methacrylate form negative-acting resists that are extremely sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.

Abstract: Extremely useful compositions for delineation of materials utilized in device applications have been found. These compositions include a polymer having segments that are at least 10 monomer units long of a first entity and segments again at least 10 monomer units long of a second entity. The monomer units are chosen so that each segment type provides a specific chemical characteristic to the polymer.

Abstract: Polymers formed from monomers such as chloromethyl styrene and trimethylsilylmethyl methacrylate form negative-acting resists that are sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.