Abstract: Systems and methods to non-invasively measure sub-cutaneous processes in a patient are disclosed. Examples of systems may optically detect biological fluid properties. The optical detection techniques described herein may be incorporated into a wearable monitoring system. Examples of wearable monitoring systems may simultaneously measure a plurality of sensory modalities. Systems of the present disclosure may be mounted on the skin of a patient.

Abstract: Systems and methods to non-invasively measure sub-cutaneous processes in a patient are disclosed. Examples of systems may optically detect biological fluid properties. The optical detection techniques described herein may be incorporated into a wearable monitoring system. Examples of wearable monitoring systems may simultaneously measure a plurality of sensory modalities. Systems of the present disclosure may be mounted on the skin of a patient.

Abstract: Systems and methods for remotely monitoring blood flow that include an endovascular prosthesis. The endovascular prosthesis includes a conduit forming a lumen within a surrounding wall having an inner surface and an outer surface. A monitoring device is disposed on the wall forming the lumen. The monitoring device comprises a sensor element configured to detect a physical event and to generate an electrical parameter shift in response to the physical event. An antenna portion is configured to receive a first oscillating electrical signal from an interrogator device and to transmit a second oscillating electrical signal to the interrogator device. The second oscillating electrical signal is modulated by the electrical parameter shift.

Abstract: An endovascular prosthesis comprising: a conduit formed by a wall structure surrounding a lumen; a sensor element configured to generate an electrical parameter shift in response to a physical event, the sensor element integrated in the wall structure of the conduit, the wall structure includes at least one wire structure, where at least a part of the wire structure include a first metallic conduit, a second metallic conduit, and a sensor disposed between the first metallic conduit and the second metallic conduit, where the first and second metallic conduits are conductors in a monitoring device detecting the electrical parameter shift in the sensor; wherein the sensor is either a variable capacitive sensor, and the first metallic conduit and the second metallic conduit form the electrodes of the variable capacitor; or a variable resistor configured to generate a resistance change in response to the physical event.

Abstract: Systems and methods to non-invasively measure sub-cutaneous processes in a patient are disclosed. Examples of systems may optically detect biological fluid properties. The optical detection techniques described herein may be incorporated into a wearable monitoring system. Examples of wearable monitoring systems may simultaneously measure a plurality of sensory modalities. Systems of the present disclosure may be mounted on the skin of a patient.

Abstract: Systems and methods for remotely monitoring blood flow that include an endovascular prosthesis. The endovascular prosthesis includes a conduit forming a lumen within a surrounding wall having an inner surface and an outer surface. A monitoring device is disposed on the wall forming the lumen. The monitoring device comprises a sensor element configured to detect a physical event and to generate an electrical parameter shift in response to the physical event. An antenna portion is configured to receive a first oscillating electrical signal from an interrogator device and to transmit a second oscillating electrical signal to the interrogator device. The second oscillating electrical signal is modulated by the electrical parameter shift.

Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

Abstract: A method and structure for operating a magnetoresistive sensor system includes applying a set-reset process wherein the set-reset signal is phased through the magnetoresistive element in such a way that the set-reset field of each region is not released until the adjacent field is aligned. Starting at one end of the magnetoresistive element, the set-reset signal is activated. This aligns the domains directly underneath the first of the set-reset elements. Before this field is released, the adjacent set-reset is activated, which aligned the domains in the adjacent field. Once the adjacent field has been realigned, the set-reset field in the first region can be released, and the set-reset field in the next region can be activated. In this way, no more than two set-reset elements must be active at any one time.

Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

Abstract: A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member.

Abstract: An improved MEMS transducer apparatus and method. The method includes providing a movable base structure having a base surface region overlying a substrate and a center cavity with a cavity surface region. At least one center anchor structure and one spring structure can be spatially disposed within a substantially circular portion of the surface region. The spring structure(s) can be coupled the center anchor structure(s) to a portion of the cavity surface region. The substantially circular portion can be configured within a vicinity of the center of the surface region. At least one capacitor element, having a fixed and a movable capacitor element, can be spatially disposed within a vicinity of the cavity surface region. The fixed capacitor element(s) can be coupled to the center anchor structure(s) and the movable capacitor element(s) can be spatially disposed on a portion of the cavity surface region.

Abstract: An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures.

Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

Abstract: An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures.

Abstract: A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

Abstract: A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member.

Abstract: A method and structure for fabricating a monolithic integrated MEMS device. The method includes providing a substrate having a surface region and forming at least one conduction material and at least one insulation material overlying at least one portion of the surface region. At least one support structure can be formed overlying at least one portion of the conduction and insulation surface regions, and at least one MEMS device can be formed overlying the support structure(s) and the conduction and insulation surface regions. In a variety of embodiments, the support structure(s) can include dielectric or oxide materials. The support structure(s) can then be removed and a cover material can be formed overlying the MEMS device(s), the conduction and insulation materials, and the substrate. In various embodiments, the removal of the support structure(s) can be accomplished via a vapor etching process.

Abstract: A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member.