Abstract: Disclosed is a process for reducing lithographic image size for integrated circuit manufacture. A mask of photosensitive material having an opening of a minimum size dictated by the limits of lithography is formed on a substrate. Reduction in the image size is achieved by establishing sidewalls to the interior vertical surfaces of the opening by depositing a conformal layer, followed by anisotropic etching. The dimension of the opening is reduced by the combined thickness of the two opposite insulator sidewalls.In a specific direct application of the disclosed process, a photomask/stencil having a pattern of openings of a minimum size smaller than possible by lighography, per se, is formed.

Abstract: Disclosed is a process for reducing lithographic image size for integrated circuit manufacture. A mask of photosensitive material having an opening of a minimum size dictated by the limits of lithography is formed on a substrate. Reduction in the image size is achieved by establishing sidewalls to the interior vertical surfaces of the opening by depositing a conformal layer, followed by anisotropic etching. The dimension of the opening is reduced by the combined thickness of the two opposite insulator sidewalls.In a specific direct application of the disclosed process, a photomask/stencil having a pattern of openings of a minimum size smaller than possible by lithography, per se, is formed.

Abstract: Disclosed is a process of growing a conformal and etch-resistant silicon dioxide on a surface by forming a conformal layer of polysilicon and subjecting the polysilicon to thermal oxidation to completely convert the polysilicon into (poly) silicon oxide.Disclosed also is a method of forming an isolation trench in a semiconductor substrate having a high integrity oxide sidewall. After forming the trench in the substrate surface using a suitable etch mask and RIE, a single (thermal) oxide or dual (thermal) oxide and (CVD) nitride liner is formed on all trench surfaces. A conformal layer of undoped polysilicon is then formed (by. e.g. LPCVD) on the liner. By subjecting to thermal oxidation, the polysilicon is completely converted into a conformal (poly) silicon oxide layer having a thickness about 2.5 times that of the polysilicon layer. The resulting (poly) silicon oxide has the conformality of CVD oxide and the high etch resistance of thermally grown oxide.

Abstract: A process for setting the exposure speed of photolithography instruments is described, using a method of dosimetry based on photoactive compound bleaching of photoresist. A curve of light absorbance to exposure speed and a calibration curve of light absorbance to dose are determined for a photoresist. The exposure speed for any desired degree of resist bleaching can be set using the first curve, and the exposure speed for a predetermined dosage can be set by determining the common light absorbance value on the exposure speed and dosage curves.