Abstract: A method is provided, the method comprising sampling at least one parameter characteristic of processing performed on a workpiece in at least one processing step, and modeling the at least one characteristic parameter sampled using an adaptive sampling processing model, treating sampling as an integrated part of a dynamic control environment, varying the sampling based upon at least one of situational information, upstream events and requirements of run-to-run controllers. The method also comprises applying the adaptive sampling processing model to modify the processing performed in the at least one processing step.

Abstract: A method is provided for compressing data. The method comprises collecting processing data representative of a process. The method further comprises modeling the collected processing data using a control model. The method also comprises applying the control model to compress the collected processing data.

Abstract: A method is provided for compressing data. The method includes collecting data representative of a process. The method further includes scaling at least a portion of the collected data to generate mean values and mean-scaled values for the collected data. The method also includes calculating Scores from the mean-scaled values for the collected data using at most first, second, third and fourth Principal Components derived from a model using archived data sets and saving the Scores and the mean values.

Abstract: A method is provided for manufacturing, the method comprising processing a workpiece, measuring a parameter characteristic of the processing, and forming an output signal corresponding to the characteristic parameter measured by using the characteristic parameter measured as an input to a transistor model. The method also comprises predicting a wafer electrical test (WET) resulting value based on the output signal, detecting faulty processing based on the predicted WET resulting value, and correcting the faulty processing.

Abstract: A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes calculating Scores from at least a portion of the collected intensity data using at most first, second, third and fourth Principal Components derived from a model. The method also includes determining the etch endpoint using Scores corresponding to at least one of the first, second, third and fourth Principal Components as an indicator for the etch endpoint.

Abstract: A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes analyzing at least a portion of the collected intensity data into at most first and second Principal Components with respective Loadings and corresponding Scores. The method also includes determining the etch endpoint using the respective Loadings and corresponding Scores of the second Principal Component as an indicator for the etch endpoint using real-time Principal Components Analysis applied to optical emission spectral data from a previous portion of the plasma etch process.

Abstract: In one illustrative embodiment, a method is provided that comprises energizing a light source to provide light having a preselected intensity. A first photosensor, which is capable of delivering a first signal indicative of the intensity of the light source, is exposed to the light source. A second photosensor, which is also capable of delivering a second signal indicative of the intensity of the light source, is also exposed to the light source. Thereafter, the first and second signals are compared, and an error signal is delivered in response to detecting a significant difference between the first and second signals.

Abstract: In one illustrative embodiment, a method is provided that comprises energizing a light source to provide light having a preselected intensity. A first photosensor, which is capable of delivering a first signal indicative of the intensity of the light source, is exposed to the light source. A second photosensor, which is also capable of delivering a second signal indicative of the intensity of the light source, is also exposed to the light source. Thereafter, the first and second signals are compared, and an error signal is delivered in response to detecting a significant difference between the first and second signals.

Abstract: In one illustrative embodiment, a method is provided that comprises energizing a light source to provide light having a preselected intensity. A first photosensor, which is capable of delivering a first signal indicative of the intensity of the light source, is exposed to the light source. A second photosensor, which is also capable of delivering a second signal indicative of the intensity of the light source, is also exposed to the light source. Thereafter, the first and second signals are compared, and an error signal is delivered in response to detecting a significant difference between the first and second signals.

Abstract: A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes analyzing at least a portion of the collected intensity data into at most first and second Principal Components with respective Loadings and corresponding Scores. The method also includes determining the etch endpoint using the respective Loadings and corresponding Scores of the second Principal Component as an indicator for the etch endpoint using Principal Components Analysis applied to archived optical emission spectral data.

Abstract: In one illustrative embodiment, a system is provided for controlling a lens of an optical system of a stepper. The system comprises the stepper, the optical system, and a controller. The stepper has a light source controllably energizable to provide light to a surface of a semiconductor device. The lens of the optical system has a controllable focus. The controller is capable of determining a temperature of the lens, and controllably varying the focus of the lens in response to the temperature of the lens.

Abstract: In one illustrative embodiment, a method is provided that comprises energizing a light source to provide light having a preselected intensity. A first photosensor, which is capable of delivering a first signal indicative of the intensity of the light source, is exposed to the light source. A second photosensor, which is also capable of delivering a second signal indicative of the intensity of the light source, is also exposed to the light source. Thereafter, the first and second signals are compared, and an error signal is delivered in response to detecting a significant difference between the first and second signals.

Abstract: The present invention provides for a method and an apparatus for implementing an embedded process control into a manufacturing tool system. At least one semiconductor device is processed. An embedded process control procedure is performed in response to the processing of the semiconductor device. A subsequent process of semiconductor device is performed in response to the embedded process control procedure. The apparatus of the present invention comprises: a computer system; and at least one manufacturing tool system interfaced with the computer, the manufacturing tool system comprising an embedded process control system capable of receiving commands from the computer system and control a manufacturing process performed by the manufacturing tool system.

Abstract: A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes analyzing at least a portion of the collected intensity data into at most first and second Principal Components with respective Loadings and corresponding Scores. The method also includes determining the etch endpoint using the respective Loadings and corresponding Scores of the second Principal Component as an indicator for the etch endpoint using thresholding applied to the respective Loadings of the second Principal Component.

Abstract: A system and method for controlling the manufacture of semiconductor wafers using model predictive control is provided. In accordance with one embodiment, a tool output of the manufacturing tool is determined based on a first wafer run. Using the tool output, a tool input for a subsequent wafer run is determined by minimizing an optimization equation being dependent upon a model which relates tool output to tool process state and tool process state to tool input and previous tool process state. The tool input is then provided to the manufacturing tool for processing a second wafer run. In this manner, processing by the tool or tool age is taken into account in determining the tool input for a subsequent run. This can reduce variations in tool output from run-to-run and improve the characteristics of the ultimately formed semiconductor devices.

Abstract: It has been discovered that all causes of critical dimension variation, both known and unknown, are compensated by adjusting the time of photoresist etch. Accordingly, a control method employs a control system using photoresist etch time as a manipulated variable in either a feedforward or a feedback control configuration to control critical dimension variation during semiconductor fabrication. By controlling critical dimensions through the adjustment of photoresist etch time, many advantages are achieved including a reduced lot-to-lot variation, an increased yield, and increased speed of the fabricated circuits. In one embodiment these advantages are achieved for polysilicon gate critical dimension control in microprocessor circuits. Polysilicon gate linewidth variability is reduced using a control method using either feedforward and feedback or feedback alone. In some embodiments, feedback control is implemented for controlling critical dimensions using photoresist etch time as a manipulated variable.

Abstract: It has been discovered that all causes of critical dimension variation, both known and unknown, are compensated by adjusting the time of photoresist etch. Accordingly, a control method employs a control system using photoresist etch time as a manipulated variable in either a feedforward or a feedback control configuration to control critical dimension variation during semiconductor fabrication. By controlling critical dimensions through the adjustment of photoresist etch time, many advantages are achieved including a reduced lot-to-lot variation, an increased yield, and increased speed of the fabricated circuits. In one embodiment these advantages are achieved for polysilicon gate critical dimension control in microprocessor circuits. Polysilicon gate linewidth variability is reduced using a control method using either feedforward and feedback or feedback alone. In some embodiments, feedback control is implemented for controlling critical dimensions using photoresist each time as a manipulated variable.