Abstract: Processing forms an integrated circuit structure having first and second layers on opposite sides of an insulator, and an interconnect structure extending through the insulator between the first layer and the second layer. The interconnect structure is formed in an opening extending through the insulator between the first layer and the second layer and has an electrical conductor in the opening extending between the first layer and the second layer and a thermally conductive electrical insulator liner along sidewalls of the opening extending between the first layer and the second layer. The electrical conductor is positioned to conduct electrical signals between the first layer and the second layer, and the thermally conductive electrical insulator liner is positioned to transfer heat between the first layer and the second layer.

Abstract: An integrated circuit (IC) structure includes an active device over a bulk semiconductor substrate, and an isolation structure around the active device in the bulk semiconductor substrate. The active device includes a semiconductor layer having a center region, a first end region laterally spaced from the center region by a first trench isolation, a second end region laterally spaced from the center region by a second trench isolation, a gate over the center region, and a source/drain region in each of the first and second end regions. The isolation structure includes: a polycrystalline isolation layer under the active device, a third trench isolation around the active device, and a porous semiconductor layer between the first trench isolation and the polycrystalline isolation layer and between the second trench isolation and the polycrystalline isolation layer.

Abstract: An integrated circuit (IC) structure includes an active device over a bulk semiconductor substrate, and an isolation structure around the active device in the bulk semiconductor substrate. The isolation structure includes: a polycrystalline isolation layer under the active device, a trench isolation adjacent the active device, and a porous semiconductor layer between the trench isolation and the bulk semiconductor substrate.

Abstract: A transistor includes a bulk semiconductor substrate, and first and second raised source/drain regions above the bulk semiconductor substrate. A gate is between the first and second raised source/drain regions. A first dielectric section is beneath the first raised source/drain region in the bulk semiconductor substrate, and a second dielectric section is beneath the second raised source/drain region in the bulk semiconductor substrate. A first air gap is defined in at least the first dielectric section under the first raised source/drain region, and a second air gap is defined in at least the second dielectric section under the second raised source/drain region. The air gaps reduce off capacitance of the bulk semiconductor structure to near semiconductor-on-insulator levels without the disadvantages of an air gap under the channel region.

Abstract: A transistor includes a bulk semiconductor substrate, and a first source/drain region in the bulk semiconductor substrate separated from a second source/drain region in the bulk semiconductor substrate by a channel region. A first air gap is defined in the bulk semiconductor substrate under the first source/drain region, and a second air gap is defined in the bulk semiconductor substrate under the second source/drain region. A gate is over the channel region. A spacing between the first air gap and the second air gap is greater than or equal to a length of the channel region such that the first and second air gaps are not under the channel region. The air gaps may have a rectangular cross-sectional shape. The air gaps reduce off capacitance of the bulk semiconductor structure to near semiconductor-on-insulator levels without the disadvantages of an air gap under the channel region.

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure, including a device layer including a device on a substrate. A local interconnect layer is over the device layer, and includes a first dielectric material over the substrate. The first dielectric material has a first effective dielectric constant. A second dielectric material is over the device and adjacent the first dielectric material. The second dielectric material has a second effective dielectric constant less than the first effective dielectric constant.

Abstract: Structures including a photodetector and methods of fabricating such structures. The photodetector is positioned over the top surface of the substrate. The photodetector includes a portion of a semiconductor layer comprised of a semiconductor alloy, a p-type doped region in the portion of the semiconductor layer, and an n-type doped region in the portion of the semiconductor layer. The p-type doped region and the n-type doped region converge along a p-n junction. The portion of the semiconductor layer has a first side and a second side opposite from the first side. The semiconductor alloy has a composition that is laterally graded from the first side to the second side of the portion of the semiconductor layer.

Abstract: Structures for a semiconductor device including airgap isolation and methods of forming a semiconductor device structure that includes airgap isolation. The structure includes a trench isolation region, an active region of semiconductor material surrounded by the trench isolation region, and a field-effect transistor including a gate within the active region. The structure further includes a dielectric layer over the field-effect transistor, a first gate contact coupled to the gate, and a second gate contact coupled to the gate. The first and second gate contacts are positioned in the dielectric layer over the active region, and the second gate contact is spaced along a longitudinal axis of the gate from the first gate contact. The structure further includes an airgap including a portion positioned in the dielectric layer over the gate between the first and second gate contacts.

Abstract: Structures for a semiconductor device including airgap isolation and methods of forming a semiconductor device structure that includes airgap isolation. The structure includes a trench isolation region, an active region of semiconductor material surrounded by the trench isolation region, and a field-effect transistor including a gate within the active region. The structure further includes a dielectric layer over the field-effect transistor, a first gate contact coupled to the gate, and a second gate contact coupled to the gate. The first and second gate contacts are positioned in the dielectric layer over the active region, and the second gate contact is spaced along a longitudinal axis of the gate from the first gate contact. The structure further includes an airgap including a portion positioned in the dielectric layer over the gate between the first and second gate contacts.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to field effect transistors and methods of manufacture. The structure includes: at least one gate structure comprising source/drain regions; and at least one isolation structure perpendicular to the at least one gate structure and within the source/drain regions.

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to field effect transistors and methods of manufacture. The structure includes: at least one gate structure having source/drain regions; at least one isolation structure within the source/drain regions in a substrate material; and semiconductor material on a surface of the at least one isolation structure in the source/drain regions.

Abstract: Semiconductor structures including electrical isolation and methods of forming a semiconductor structure including electrical isolation. A layer stack is formed on a semiconductor substrate comprised of a single-crystal semiconductor material. The layer stack includes a semiconductor layer comprised of a III-V compound semiconductor material. A polycrystalline layer is formed in the semiconductor substrate. The polycrystalline layer extends laterally beneath the layer stack.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a wafer with localized cavity structures and methods of manufacture. A structure includes a bulk substrate with localized semiconductor on insulator (SOI) regions and bulk device regions, the localized SOI regions includes multiple cavity structures and substrate material of the bulk substrate.

Abstract: Aspects of the disclosure provide an integrated circuit (IC) structure with a bipolar transistor stack within a substrate. The bipolar transistor stack may include: a collector, a base on the collector, and an emitter on a first portion of the base. A horizontal width of the emitter is less than a horizontal width of the base, and an upper surface of the emitter is substantially coplanar with an upper surface of the substrate. An extrinsic base structure is on a second portion of the base of the bipolar transistor stack, and horizontally adjacent the emitter. The extrinsic base structure includes an upper surface above the upper surface of the substrate.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a metal-free fuse structure and methods of manufacture. The structure includes: a first metal-free fuse structure comprising a top semiconductor material of semiconductor-on-insulator (SOI) technologies, the top semiconductor material including end portions with a first electrical resistance and a fuse portion of a second, higher electrical resistance electrically connected to the end portions; and a second metal-free fuse structure comprising the top semiconductor material of semiconductor-on-insulator (SOI) technologies, the top semiconductor material of the second metal-free fuse structure including at least a fuse portion of a lower electrical resistance than the second, higher electrical resistance.

Abstract: A “lab on a chip” includes an optofluidic sensor and components to analyze signals from the optofluidic sensor. The optofluidic sensor includes a substrate, a channel at least partially defined by a portion of a layer of first material on the substrate, input and output fluid reservoirs in fluid communication with the channel, at least a first radiation source coupled to the substrate adapted to generate radiation in a direction toward the channel, and at least one photodiode positioned adjacent and below the channel.

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A shallow trench isolation region is formed in a semiconductor substrate. A trench is formed in the shallow trench isolation region, and a body region is formed in the trench of the shallow trench isolation region. The body region is comprised of a polycrystalline semiconductor material.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a transistor with an embedded isolation layer in a bulk substrate and methods of manufacture. The structure includes: a bulk substrate; an isolation layer embedded within the bulk substrate and below a top surface of the bulk substrate; a deep trench isolation structure extending through the bulk substrate and contacting the embedded isolation layer; and a gate structure over the top surface of the bulk substrate and vertically spaced away from the embedded isolation layer, the deep trench isolation structure and the embedded isolation layer defining an active area of the gate structure in the bulk substrate.