Patents by Inventor Anton Bernhard VAN OOSTEN
Anton Bernhard VAN OOSTEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240126181Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: ApplicationFiled: November 16, 2023Publication date: April 18, 2024Applicant: ASML NETHERLANDS B.V.Inventors: Abraham SLACHTER, Stefan HUNSCHE, Wim Tjibbo TEL, Anton Bernhard VAN OOSTEN, Koenraad VAN INGEN SCHENAU, Gijsbert RISPENS, Brennan PETERSON
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Patent number: 11822255Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: GrantFiled: July 30, 2021Date of Patent: November 21, 2023Assignee: ASML Netherlands B.V.Inventors: Abraham Slachter, Stefan Hunsche, Wim Tjibbo Tel, Anton Bernhard Van Oosten, Koenraad Van Ingen Schenau, Gijsbert Rispens, Brennan Peterson
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Publication number: 20220404718Abstract: A method for reducing apparatus performance variation. The method includes obtaining (i) a reference performance (e.g., CD) of a reference apparatus (e.g, a reference scanner), (ii) a set of initial leading degrees of freedom selected from a plurality of degrees of freedom of a plurality of pupil facet mirrors of an apparatus (e.g., to be matched scanner) that is selected to reproduce the reference performance, and (iii) exposure data related to one or more parameters (e.g., CD, overlay, focus, etc.) of the patterning process indicating a performance of the apparatus based on the set of initial leading degrees of freedom; and determining a matching pupil of the apparatus based on the set of initial leading degrees of freedom and the exposure data such that the matching pupil reduces a difference between the performance of the apparatus and the reference performance.Type: ApplicationFiled: August 26, 2022Publication date: December 22, 2022Applicant: ASML NETHERLANDS B.V.Inventor: Anton Bernhard VAN OOSTEN
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Patent number: 11460782Abstract: A method for reducing apparatus performance variation. The method includes obtaining (i) a reference performance (e.g., CD) of a reference apparatus (e.g., a reference scanner), (ii) a set of initial leading degrees of freedom selected from a plurality of degrees of freedom of a plurality of pupil facet mirrors of an apparatus (e.g., to be matched scanner) that is selected to reproduce the reference performance, and (iii) exposure data related to one or more parameters (e.g., CD, overlay, focus, etc.) of the patterning process indicating a performance of the apparatus based on the set of initial leading degrees of freedom; and determining a matching pupil of the apparatus based on the set of initial leading degrees of freedom and the exposure data such that the matching pupil reduces a difference between the performance of the apparatus and the reference performance.Type: GrantFiled: August 12, 2019Date of Patent: October 4, 2022Assignee: ASML Netherlands B.V.Inventor: Anton Bernhard Van Oosten
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Patent number: 11314174Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.Type: GrantFiled: August 3, 2018Date of Patent: April 26, 2022Assignee: ASML Netherlands B.V.Inventors: Laurentius Cornelius De Winter, Roland Pieter Stolk, Frank Staals, Anton Bernhard Van Oosten, Paul Christiaan Hinnen, Marinus Jochemsen, Thomas Theeuwes, Eelco Van Setten
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Patent number: 11287748Abstract: A method for inspection of a patterning device. The method includes obtaining (i) patterning device apparatus data of a patterning device making process, (ii) a patterning device substrate map based on the patterning device apparatus data, and (iii) predicted process window limiting pattern locations corresponding to the patterning device based on the patterning device substrate map, and based on the process window limiting pattern locations, guiding a patterning device inspection apparatus to the process window limiting pattern locations for defect inspection.Type: GrantFiled: February 19, 2019Date of Patent: March 29, 2022Assignee: ASML Netherlands B.V.Inventors: Anton Bernhard Van Oosten, Vidya Vaenkatesan, James Norman Wiley, Reinder Teun Plug
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Publication number: 20210356874Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: ApplicationFiled: July 30, 2021Publication date: November 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Abraham SLACHTER, Stefan HUNSCHE, Wim Tjibbo TEL, Anton Bernhard VAN OOSTEN, Koenraad VAN INGEN SCHENAU, Gijsbert RISPENS, Brennan PETERSON
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Patent number: 11150560Abstract: Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system includes a radiation source. The radiation source includes a grating structure operable to suppress the zeroth order of reflected radiation for at least a first component wavelength. The grating structure has a periodic profile including regularly spaced structures providing three surface levels, such that radiation diffracted by the grating structure includes radiation of three phases which destructively interfere for at least the zeroth order of the reflected radiation for the first component wavelength. The grating structure is on a radiation collector within the source.Type: GrantFiled: May 22, 2020Date of Patent: October 19, 2021Assignee: ASML Netherlands B.V.Inventors: Marcus Adrianus Van De Kerkhof, Anton Bernhard Van Oosten, Hans Butler, Erik Roelof Loopstra, Marc Wilhelmus Maria Van Der Wijst, Koen Jacobus Johannes Maria Zaal
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Publication number: 20210302844Abstract: A method for reducing apparatus performance variation. The method includes obtaining (i) a reference performance (e.g., CD) of a reference apparatus (e.g., a reference scanner), (ii) a set of initial leading degrees of freedom selected from a plurality of degrees of freedom of a plurality of pupil facet mirrors of an apparatus (e.g., to be matched scanner) that is selected to reproduce the reference performance, and (iii) exposure data related to one or more parameters (e.g., CD, overlay, focus, etc.) of the patterning process indicating a performance of the apparatus based on the set of initial leading degrees of freedom; and determining a matching pupil of the apparatus based on the set of initial leading degrees of freedom and the exposure data such that the matching pupil reduces a difference between the performance of the apparatus and the reference performance.Type: ApplicationFiled: August 12, 2019Publication date: September 30, 2021Applicant: ASML NETHERLANDS B.V.Inventor: Anton Bernhard VAN OOSTEN
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Patent number: 11079687Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: GrantFiled: December 17, 2018Date of Patent: August 3, 2021Assignee: ASML Netherlands B.V.Inventors: Abraham Slachter, Stefan Hunsche, Wim Tjibbo Tel, Anton Bernhard Van Oosten, Koenraad Van Ingen Schenau, Gijsbert Rispens, Brennan Peterson
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Patent number: 11054754Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424) A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1?) and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.Type: GrantFiled: May 28, 2018Date of Patent: July 6, 2021Assignee: ASML Netherlands B.V.Inventors: Frank Staals, Anton Bernhard Van Oosten, Yasri Yudhistira, Carlo Cornelis Maria Luijten, Bert Verstraeten, Jan-Willem Gemmink
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Publication number: 20210041788Abstract: A method for inspection of a patterning device. The method includes obtaining (i) patterning device apparatus data of a patterning device making process, (ii) a patterning device substrate map based on the patterning device apparatus data, and (iii) predicted process window limiting pattern locations corresponding to the patterning device based on the patterning device substrate map, and based on the process window limiting pattern locations, guiding a patterning device inspection apparatus to the process window limiting pattern locations for defect inspection.Type: ApplicationFiled: February 19, 2019Publication date: February 11, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Anton Bernhard VAN OOSTEN, Vidya VAENKATESAN, James Norman WILEY, Reinder Teun PLUG
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Publication number: 20210018850Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: ApplicationFiled: December 17, 2018Publication date: January 21, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Abraham SLACHTER, Stefan HUNSCHE, Wim Tjibbo TEL, Anton Bernhard VAN OOSTEN, Koenraad VAN INGEN SCHENAU, Gijsbert RISPENS, Brennan PETERSON
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Patent number: 10775705Abstract: A method of tuning a patterning stack, the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack on a substrate is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack; varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.Type: GrantFiled: August 2, 2017Date of Patent: September 15, 2020Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Jozef Maria Finders, Orion Jonathan Pierre Mouraille, Anton Bernhard Van Oosten
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Publication number: 20200285155Abstract: Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system includes a radiation source. The radiation source includes a grating structure operable to suppress the zeroth order of reflected radiation for at least a first component wavelength. The grating structure has a periodic profile including regularly spaced structures providing three surface levels, such that radiation diffracted by the grating structure includes radiation of three phases which destructively interfere for at least the zeroth order of the reflected radiation for the first component wavelength. The grating structure is on a radiation collector within the source.Type: ApplicationFiled: May 22, 2020Publication date: September 10, 2020Applicant: ASML Netherlands B.V.Inventors: Marcus Adrianus VAN DE KERKHOF, Anton Bernhard VAN OOSTEN, Hans BUTLER, Erik Roelof LOOPSTRA, Marc Wilhelmus Maria VAN DER WIJST, Koen Jacobus Johannes Maria ZAAL
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Publication number: 20200264522Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.Type: ApplicationFiled: August 3, 2018Publication date: August 20, 2020Applicant: ASML Netherlands B.V.Inventors: Laurentius Cornelius DE WINTER, Roland Pieter STOLK, Frank STAALS, Anton Bernhard VAN OOSTEN, Paul Christiaan HINNEN, Marinus JOCHEMSEN, Thomas THEEUWES, Eelco VAN SETTEN
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Patent number: 10732511Abstract: Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system comprises a mirror having an actuator for positioning the mirror and/or configuring the shape of the mirror, the actuator also providing active damping to the mirror, and a controller for generating actuator control signals for control of said actuator(s). A first coordinate system is used for control of said actuator(s) when positioning said mirror and/or configuring the shape of said mirror and a second coordinate system is used for control of said actuator(s) when providing active damping to said mirror.Type: GrantFiled: January 25, 2019Date of Patent: August 4, 2020Assignee: ASML Netherlands B.V.Inventors: Marcus Adrianus Van De Kerkhof, Anton Bernhard Van Oosten, Hans Butler, Erik Roelof Loopstra, Marc Wilhelmus Maria Van Der Wijst, Koen Jacobus Johannes Maria Zaal
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Publication number: 20200142324Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424) A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1?) and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.Type: ApplicationFiled: May 28, 2018Publication date: May 7, 2020Applicant: ASML Netherlands B.V.Inventors: Frank STAALS, Anton Bernhard VAN OOSTEN, Yasri YUDHISTIRA, Carlo Cornelis Maria LUIJTEN, Bert VERSTRAETEN, Jan-Willem GEMMINK
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Patent number: 10571812Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004?) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIGS. 13-15) uses two aberration settings (+AST, ?AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIGS. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.Type: GrantFiled: July 26, 2018Date of Patent: February 25, 2020Assignee: ASML Netherlands B.V.Inventors: Fahong Li, Miguel Garcia Granda, Carlo Cornelis Maria Luijten, Bart Peter Bert Segers, Cornelis Andreas Franciscus Johannes Van Der Poel, Frank Staals, Anton Bernhard Van Oosten, Mohamed Ridane
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Publication number: 20190378012Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.Type: ApplicationFiled: May 29, 2019Publication date: December 12, 2019Applicant: ASML Netherlands B.V.Inventors: Lorenzo Tripodi, Patrick Warnaar, Grzegorz Grzela, Mohammadreza Hajiahmadi, Farzad Farhadzadeh, Patricius Aloysius Jacobus Tinnemans, Scott Anderson Middlebrooks, Adrianus Cornelis Matheus Koopman, Frank Staals, Brennan Peterson, Anton Bernhard Van Oosten