Patents by Inventor Anton Schnegg

Anton Schnegg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040029316
    Abstract: The invention relates to a method for assembling planar workpieces, whereby a connection, whose adhesiveness and brittleness is temperature-dependent, is made by means of a cement between the planar workpiece and a support plate. The method is characterised in that connected are only partially covered by the cement after the workpiece has been placed on the support plate.
    Type: Application
    Filed: August 20, 2003
    Publication date: February 12, 2004
    Inventors: Anton Schnegg, Robert Rurlander, Markus Schnappauf, Thomas Hubel
  • Patent number: 6416393
    Abstract: A process is for producing a semiconductor wafer with a front surface and a back surface, in which the semiconductor wafer is subjected to two-sided polishing. The process includes the following: (a) producing a hydrophobic surface on the semiconductor wafer by treating the semiconductor wafer with an aqueous HF solution; (b) simultaneous polishing of the front surface and the back surface of the semiconductor wafer with a surface which has been rendered hydrophobic, with an alkaline polishing abrasive being continuously supplied between two rotating upper and lower polishing plates, which are both covered with a polishing cloth, the pH of the polishing abrasive being from pH 8.5 to pH 12.5; (c) after an intended polishing abrasion has been reached, supplying a stopping agent to the semiconductor wafer; and (d) removing the semiconductor wafer from the polishing plates.
    Type: Grant
    Filed: April 2, 2001
    Date of Patent: July 9, 2002
    Assignee: Wacker Siltronic Gesellschaft für Halbleitermaterialien AG
    Inventors: Laszlo Fabry, Gabriele Lechner, Anton Schnegg, Andreas Ehlert
  • Publication number: 20010036797
    Abstract: A process is for producing a semiconductor wafer with a front surface and a back surface, in which the semiconductor wafer is subjected to two-sided polishing. The process includes the following: (a) producing a hydrophobic surface on the semiconductor wafer by treating the semiconductor wafer with an aqueous HF solution; (b) simultaneous polishing of the front surface and the back surface of the semiconductor wafer with a surface which has been rendered hydrophobic, with an alkaline polishing abrasive being continuously supplied between two rotating upper and lower polishing plates, which are both covered with a polishing cloth, the pH of the polishing abrasive being from pH 8.5 to pH 12.5; (c) after an intended polishing abrasion has been reached, supplying a stopping agent to the semiconductor wafer; and (d) removing the semiconductor wafer from the polishing plates.
    Type: Application
    Filed: April 2, 2001
    Publication date: November 1, 2001
    Applicant: WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
    Inventors: Laszlo Fabry, Gabriele Lechner, Anton Schnegg, Andreas Ehlert
  • Patent number: 6171385
    Abstract: A method of mounting and demounting a semiconductor wafer, in which a temperature dependent adhesive and curable joint is provided by an adhesive mixture between the semiconductor wafer and a carrier plate. The adhesive mixture contains a colophonium resin which is chemically modified and esterified. The cured joint is released with water again after polishing the semiconductor wafer. The adhesive mixture suitable for carrying out the method is this resin with an amine which saponifies the resin.
    Type: Grant
    Filed: December 8, 1998
    Date of Patent: January 9, 2001
    Assignee: Wacker Siltronic Gesellschaft f{umlaut over (u)}r Halbleitermaterialien AG
    Inventors: Robert Rurlaender, Norbert Franze, Franz Mangs, Anton Schnegg
  • Patent number: 5695572
    Abstract: A cleaning agent and method are useful for cleaning semiconductor wafers. The aqueous cleaning agent has a pH of 1 to 5, preferably a pH of 1 to 3, and contains at least one surfactant and at least one compound which belongs to a group of compounds comprising succinic acid and its derivatives. To clean the semiconductor wafers, a thin film of cleaning agent is generated on the side faces of the semiconductor wafers, preferably using a mechanical tool.
    Type: Grant
    Filed: August 10, 1995
    Date of Patent: December 9, 1997
    Assignee: Wacker Siltronic Gesellschaft fur Halbleitermaterialien Aktiengesellschaft
    Inventors: Roland Brunner, Georg Hochgesang, Anton Schnegg, Gertraud Thalhammer
  • Patent number: 5051134
    Abstract: In the treatment of semiconductor slices, in particular silicon slices, w aqueous solutions containing hydrofluoric acid, a contamination of the slice surface with particles which interfere with the subsequent processes has been observed. This increase in particles can be markedly decreased by additionally adding to the solutions, organic ring molecules capable of forming inclusion compounds, such as, for instance, cyclodextrins, and/or acids with pKa below 3.14 which are incapable of oxidizing the semiconductor material. The actual treatment can be carried out in the usual way, for example, in immersion baths.
    Type: Grant
    Filed: December 12, 1990
    Date of Patent: September 24, 1991
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe m.b.H.
    Inventors: Anton Schnegg, Laszlo Fabby, Peter Nusstein, Gertrud Valouch
  • Patent number: 4973563
    Abstract: A process for preserving the surface of silicon wafers after the wafers are polished in a conventional polishing operation by converting the wafer surface to the hydrophobic state, in particular, by polishing, or with hydrofluoric acid and treating immediately afterwards with a reagent, e.g., alcohols, organosilanes or silanols and preferably in aqueous solution. The wafer becomes coated in this process with a protective layer which inhibits surface deterioration, and also permits long storage times.
    Type: Grant
    Filed: June 20, 1989
    Date of Patent: November 27, 1990
    Assignee: Wacker Chemitronic Gesellschaft
    Inventors: Helene Prigge, Anton Schnegg, Gerhard Brehm
  • Patent number: 4971654
    Abstract: A process and apparatus for etching semiconductor surfaces, in particular, ilicon, with a mixture containing nitrogen-oxygen based compounds as oxidizing compounds, hydrofluoric acid as the component which dissolves the oxidation product, and sulfuric acid, optionally with phosphoric acid added, as a carrier medium. This mixture makes it possible to design the process as a cyclic process in which oxygen supplied to the system ultimately effects an oxidation of the material to be etched, and the product of its oxidation is removed from the circuit. The process is noteworthy for its low usage of reagents and because it is not harmful to the environment.
    Type: Grant
    Filed: August 8, 1988
    Date of Patent: November 20, 1990
    Assignee: Wacker-Chemitronic Gesellschaft fur Electronik-Grundstoffe mbH
    Inventors: Anton Schnegg, Gerhard Brehm, Helene Prigge, Robert Rurlander, Fritz Ketterl
  • Patent number: 4968381
    Abstract: A polishing process in which haze-free semiconductor wafers can be obtained in a single-stage process in which an initial phase of the polishing operation is carried out in the usual manner in the alkaline region. This initial stage is followed by a final phase in which polishing is carried out, at a pH of 3 to 7, in the presence of additives in the polishing agent which reduce the amount of material removed by polishing. Consequently, it may be possible to dispense with polishing agent components which act mechanically. Both phases can be carried out on one and the same equipment without interrupting the polishing operation.
    Type: Grant
    Filed: September 28, 1988
    Date of Patent: November 6, 1990
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH
    Inventors: Helene Prigge, Anton Schnegg, Gerhard Brehm, Herbert Jacob
  • Patent number: 4954189
    Abstract: Silicon wafers and a process for the production thereof which produces was having intrinsic gettering action and on which thin oxide layers with high breakdown strength can be produced. During the production, the wafers are subjected to a treatment which smooths the wafer surface, for example, by repolishing, after the intrinsic getters have been produced in the interior of the wafer. Oxide layers subsequently deposited are outstanding for an increased breakdown strength compared with untreated wafers.
    Type: Grant
    Filed: September 28, 1988
    Date of Patent: September 4, 1990
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronic-Grundstoffe mbH
    Inventors: Peter Hahn, Hubert Piontek, Anton Schnegg, Werner Zulehner
  • Patent number: 4539221
    Abstract: A process for the chemical vapor deposition of oxidic particles by oxidat of halides or halide mixtures wherein dinitrogen monoxide is used as the oxidizing agent. The reaction is carried out at comparatively low temperatures of between 900.degree. and 1150.degree. C., but results in high yields.
    Type: Grant
    Filed: May 7, 1984
    Date of Patent: September 3, 1985
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe m.b.H.
    Inventors: Herbert Jacob, Robert Rurlander, Anton Schnegg
  • Patent number: 4428795
    Abstract: Indium phosphide surfaces can be polished if, during the mechanical polishing operation, which is carried out in a customary manner, a component that yields free chlorine in an aqueous acidic medium, and, at the same time, a component that yields free carbon dioxide are applied to the surface to be polished.
    Type: Grant
    Filed: June 15, 1983
    Date of Patent: January 31, 1984
    Assignee: Wacker-Chemitronic Gesellschaft fur Electronik-Grundstoffe mbH
    Inventors: Franz Kohl, Anton Schnegg, Karl Lener