Patents by Inventor Anup G. Roy
Anup G. Roy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9830936Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.Type: GrantFiled: November 17, 2015Date of Patent: November 28, 2017Assignee: WESTERN DIGITAL (FREMONT), LLCInventors: Shaoping Li, Yuankai Zheng, Gerardo A. Bertero, Qunwen Leng, Michael L. Mallary, Rongfu Xiao, Ming Mao, Zhihong Zhang, Anup G. Roy, Chen Jung Chien, Zhitao Diao, Ling Wang
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Publication number: 20160329064Abstract: Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.Type: ApplicationFiled: June 29, 2016Publication date: November 10, 2016Inventors: MIAO WANG, WEI GAO, XIAOYU YANG, ANUP G. ROY, WEI ZHANG, WENCHENG SU, ZHIHONG ZHANG, JAMES YUAN, GUANXIONG LI, MING MAO, HAI SUN, LINGYUN MIAO
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Publication number: 20160284989Abstract: Systems and methods for controlling a thickness of a soft bias layer in a tunnel magnetoresistance (TMR) reader are provided. One such method involves providing a magnetoresistive sensor stack including a free layer and a bottom shield layer, performing contiguous junction milling on the sensor stack, depositing an insulating layer on the sensor stack, depositing a spacer layer on the insulating layer, performing an angled milling sub-process to remove preselected portions of the spacer layer, depositing a soft bias layer on the sensor stack, and depositing a top shield layer on the sensor stack and the soft bias layer. The method can further involve adjusting an alignment of a top surface of the spacer layer with respect to the free layer. In one such case, the top surface of the spacer layer is adjust to be below the free layer.Type: ApplicationFiled: June 10, 2016Publication date: September 29, 2016Inventors: YI ZHENG, MING JIANG, ANUP G. ROY, GUANXIONG LI, MING MAO, DANIELE MAURI
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Patent number: 9406331Abstract: Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.Type: GrantFiled: June 27, 2013Date of Patent: August 2, 2016Assignee: Western Digital (Fremont), LLCInventors: Miao Wang, Wei Gao, Xiaoyu Yang, Anup G. Roy, Wei Zhang, Wencheng Su, Zhihong Zhang, James Yuan, Guanxiong Li, Ming Mao, Hai Sun, Lingyun Miao
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Patent number: 9396743Abstract: Systems and methods for controlling a thickness of a soft bias layer in a tunnel magnetoresistance (TMR) reader are provided. One such method involves providing a magnetoresistive sensor stack including a free layer and a bottom shield layer, performing contiguous junction milling on the sensor stack, depositing an insulating layer on the sensor stack, depositing a spacer layer on the insulating layer, performing an angled milling sub-process to remove preselected portions of the spacer layer, depositing a soft bias layer on the sensor stack, and depositing a top shield layer on the sensor stack and the soft bias layer. The method can further involve adjusting an alignment of a top surface of the spacer layer with respect to the free layer. In one such case, the top surface of the spacer layer is adjusted to be below the free layer.Type: GrantFiled: June 18, 2014Date of Patent: July 19, 2016Assignee: Western Digital (Fremont), LLCInventors: Yi Zheng, Ming Jiang, Anup G. Roy, Guanxiong Li, Ming Mao, Daniele Mauri
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Publication number: 20160180870Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.Type: ApplicationFiled: November 17, 2015Publication date: June 23, 2016Applicant: Western Digital (Fremont), LLCInventors: SHAOPING LI, YUANKAI ZHENG, GERARDO A. BERTERO, QUNWEN LENG, MICHAEL L. MALLARY, RONGFU XIAO, MING MAO, ZHIHONG ZHANG, ANUP G. ROY, CHEN JUNG CHIEN, ZHITAO DIAO, LING WANG
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Patent number: 9214172Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.Type: GrantFiled: March 31, 2014Date of Patent: December 15, 2015Assignee: Western Digital (Fremont), LLCInventors: Shaoping Li, Yuankai Zheng, Gerardo A. Bertero, Qunwen Leng, Michael L. Mallary, Rongfu Xiao, Ming Mao, Zhihong Zhang, Anup G. Roy, Chen Jung Chien, Zhitao Diao, Ling Wang
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Patent number: 9087534Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a read sensor, at least one soft magnetic bias structure and at least one hard bias structure. The read sensor includes a sensor layer that has at least one edge in the track width direction along the ABS. The soft magnetic bias structure(s) are adjacent to the edge(s) of the sensor layer. The soft magnetic bias structure has a first permeability. The soft bias structure(s) are between the read sensor and the hard bias structure(s). The hard bias structure(s) are adjacent to a portion of the soft bias structure(s) and have a second permeability. The first permeability is at least ten multiplied by the second permeability.Type: GrantFiled: May 29, 2014Date of Patent: July 21, 2015Assignee: Western Digital (Fremont), LLCInventors: Laurence L. Chen, Anup G. Roy, Yunfei Ding, Ming Mao, Amritpal S. Rana, Daniele Mauri
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Publication number: 20150109702Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.Type: ApplicationFiled: March 31, 2014Publication date: April 23, 2015Applicant: Western Digital (Fremont), LLCInventors: SHAOPING LI, YUANKAI ZHENG, GERARDO A. BERTERO, QUNWEN LENG, MICHAEL L. MALLARY, RONGFU XIAO, MING MAO, ZHIHONG ZHANG, ANUP G. ROY, CHEN JUNG CHIEN, ZHITAO DIAO, LING WANG
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Patent number: 8760823Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a read sensor, at least one soft magnetic bias structure and at least one hard bias structure. The read sensor includes a sensor layer that has at least one edge in the track width direction along the ABS. The soft magnetic bias structure(s) are adjacent to the edge(s) of the sensor layer. The soft magnetic bias structure has a first permeability. The soft bias structure(s) are between the read sensor and the hard bias structure(s). The hard bias structure(s) are adjacent to a portion of the soft bias structure(s) and have a second permeability. The first permeability is at least ten multiplied by the second permeability.Type: GrantFiled: December 20, 2011Date of Patent: June 24, 2014Assignee: Western Digital (Fremont), LLCInventors: Laurence L. Chen, Anup G. Roy, Yunfei Ding, Ming Mao, Amritpal S. Rana, Daniele Mauri
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Antiferromagnetically-coupled soft bias magnetoresistive read head, and fabrication method therefore
Patent number: 8611054Abstract: A magnetic read transducer is described with a magnetoresistive sensor that has a free layer, and an antiferromagnetically-coupled (AFC) soft bias layer for magnetically biasing the free layer. The free layer has a first edge in a track width direction along an air-bearing surface (ABS). At least a portion of the AFC soft bias layer is conformal to at least a portion of a second edge of the free layer, and situated to form a magnetic moment at an angle with respect to a center line of the free layer. The center line of the free layer extends in the same direction as the free layer first edge that is in the track width direction along the ABS.Type: GrantFiled: April 11, 2012Date of Patent: December 17, 2013Assignee: Western Digital (Fremont), LLCInventors: Changhe Shang, Daniele Mauri, Kuok San Ho, Anup G. Roy, Ming Mao -
Patent number: 8607438Abstract: A read sensor for a transducer is fabricated. The transducer has a field region and a sensor region corresponding to the sensor. A sensor stack is deposited. A hybrid mask including hard and field masks is provided. The hard mask includes a sensor portion covering the sensor region and a field portion covering the field region. The field mask covers the field portion of the hard mask. The field mask exposes the sensor portion of the hard mask and part of the sensor stack between the sensor and field regions. The sensor is defined from the sensor stack in a track width direction. Hard bias layer(s) are deposited. Part of the hard bias layer(s) resides on the field mask. Part of the hard bias layer(s) adjoining the sensor region is sealed. The field mask is lifted off. The transducer is planarized.Type: GrantFiled: December 1, 2011Date of Patent: December 17, 2013Assignee: Western Digital (Fremont), LLCInventors: Wei Gao, Guanxiong Li, Ming Mao, Chih-Ching Hu, Guanghong Luo, Miao Wang, Zhihong Zhang, Anup G. Roy
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Patent number: 8603593Abstract: A method for providing a hard bias structure is provided. The method comprises providing a seed layer for a hard bias layer, the seed layer having a seed layer lattice constant and a natural growth texture. The method further comprises depositing the hard bias layer for the hard bias structure on the seed layer, the natural growth texture corresponding to a texture for the hard bias layer. The hard bias layer has a bulk lattice constant. The step of providing the seed layer includes forming a first plasma of a first deposition gas configured to expand the seed layer lattice constant if the bulk lattice constant is greater than the seed layer constant. The step of depositing the hard bias layer includes forming a second plasma of a second deposition gas configured to expand the bulk lattice constant if the seed layer lattice constant is greater than the bulk lattice constant.Type: GrantFiled: September 17, 2012Date of Patent: December 10, 2013Assignee: Western Digital (Fremont), LLCInventors: Anup G. Roy, Mahendra Pakala
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Patent number: 8597528Abstract: A method and system for fabricating a magnetic transducer is described. A magnetic junction is defined from the magnetoresistive stack. The magnetic junction has a top and a plurality of sides. The step of defining the magnetic junction redeposits a portion of the magnetoresistive stack and forms fencing adjacent to the top of the magnetic junction. At least one hard bias structure is provided after the magnetic junction is defined. A first portion of the at least one hard bias structure is substantially adjacent to the magnetoresistive junction in a track-width direction. The magnetic junction is ion beam planarized, thereby substantially removing the fencing.Type: GrantFiled: March 30, 2011Date of Patent: December 3, 2013Assignee: Western Digital (Fremont), LLCInventors: Anup G. Roy, Ming Mao
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Patent number: 8270126Abstract: A method and system for providing a hard bias structure include providing a seed layer for a hard bias structure. The seed layer has a lattice constant and a natural growth texture. The method and system further include depositing the hard bias layer for the hard bias structure on the seed layer. The natural growth texture of the seed layer corresponds to a texture for the hard bias layer. The hard bias layer has a bulk lattice constant. Providing the seed layer includes forming a first plasma of a first deposition gas configured to expand the seed layer lattice constant if the bulk lattice constant is greater than the seed layer constant. Depositing the hard bias layer further includes forming a second plasma of a second deposition gas configured to expand the bulk lattice constant if the seed layer lattice constant is greater than the bulk lattice constant.Type: GrantFiled: June 16, 2008Date of Patent: September 18, 2012Assignee: Western Digital (Fremont), LLCInventors: Anup G. Roy, Mahendra Pakala