Patents by Inventor Anup G. Roy

Anup G. Roy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9830936
    Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
    Type: Grant
    Filed: November 17, 2015
    Date of Patent: November 28, 2017
    Assignee: WESTERN DIGITAL (FREMONT), LLC
    Inventors: Shaoping Li, Yuankai Zheng, Gerardo A. Bertero, Qunwen Leng, Michael L. Mallary, Rongfu Xiao, Ming Mao, Zhihong Zhang, Anup G. Roy, Chen Jung Chien, Zhitao Diao, Ling Wang
  • Publication number: 20160329064
    Abstract: Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.
    Type: Application
    Filed: June 29, 2016
    Publication date: November 10, 2016
    Inventors: MIAO WANG, WEI GAO, XIAOYU YANG, ANUP G. ROY, WEI ZHANG, WENCHENG SU, ZHIHONG ZHANG, JAMES YUAN, GUANXIONG LI, MING MAO, HAI SUN, LINGYUN MIAO
  • Publication number: 20160284989
    Abstract: Systems and methods for controlling a thickness of a soft bias layer in a tunnel magnetoresistance (TMR) reader are provided. One such method involves providing a magnetoresistive sensor stack including a free layer and a bottom shield layer, performing contiguous junction milling on the sensor stack, depositing an insulating layer on the sensor stack, depositing a spacer layer on the insulating layer, performing an angled milling sub-process to remove preselected portions of the spacer layer, depositing a soft bias layer on the sensor stack, and depositing a top shield layer on the sensor stack and the soft bias layer. The method can further involve adjusting an alignment of a top surface of the spacer layer with respect to the free layer. In one such case, the top surface of the spacer layer is adjust to be below the free layer.
    Type: Application
    Filed: June 10, 2016
    Publication date: September 29, 2016
    Inventors: YI ZHENG, MING JIANG, ANUP G. ROY, GUANXIONG LI, MING MAO, DANIELE MAURI
  • Patent number: 9406331
    Abstract: Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: August 2, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Miao Wang, Wei Gao, Xiaoyu Yang, Anup G. Roy, Wei Zhang, Wencheng Su, Zhihong Zhang, James Yuan, Guanxiong Li, Ming Mao, Hai Sun, Lingyun Miao
  • Patent number: 9396743
    Abstract: Systems and methods for controlling a thickness of a soft bias layer in a tunnel magnetoresistance (TMR) reader are provided. One such method involves providing a magnetoresistive sensor stack including a free layer and a bottom shield layer, performing contiguous junction milling on the sensor stack, depositing an insulating layer on the sensor stack, depositing a spacer layer on the insulating layer, performing an angled milling sub-process to remove preselected portions of the spacer layer, depositing a soft bias layer on the sensor stack, and depositing a top shield layer on the sensor stack and the soft bias layer. The method can further involve adjusting an alignment of a top surface of the spacer layer with respect to the free layer. In one such case, the top surface of the spacer layer is adjusted to be below the free layer.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: July 19, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Yi Zheng, Ming Jiang, Anup G. Roy, Guanxiong Li, Ming Mao, Daniele Mauri
  • Publication number: 20160180870
    Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
    Type: Application
    Filed: November 17, 2015
    Publication date: June 23, 2016
    Applicant: Western Digital (Fremont), LLC
    Inventors: SHAOPING LI, YUANKAI ZHENG, GERARDO A. BERTERO, QUNWEN LENG, MICHAEL L. MALLARY, RONGFU XIAO, MING MAO, ZHIHONG ZHANG, ANUP G. ROY, CHEN JUNG CHIEN, ZHITAO DIAO, LING WANG
  • Patent number: 9214172
    Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: December 15, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Shaoping Li, Yuankai Zheng, Gerardo A. Bertero, Qunwen Leng, Michael L. Mallary, Rongfu Xiao, Ming Mao, Zhihong Zhang, Anup G. Roy, Chen Jung Chien, Zhitao Diao, Ling Wang
  • Patent number: 9087534
    Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a read sensor, at least one soft magnetic bias structure and at least one hard bias structure. The read sensor includes a sensor layer that has at least one edge in the track width direction along the ABS. The soft magnetic bias structure(s) are adjacent to the edge(s) of the sensor layer. The soft magnetic bias structure has a first permeability. The soft bias structure(s) are between the read sensor and the hard bias structure(s). The hard bias structure(s) are adjacent to a portion of the soft bias structure(s) and have a second permeability. The first permeability is at least ten multiplied by the second permeability.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: July 21, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Laurence L. Chen, Anup G. Roy, Yunfei Ding, Ming Mao, Amritpal S. Rana, Daniele Mauri
  • Publication number: 20150109702
    Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
    Type: Application
    Filed: March 31, 2014
    Publication date: April 23, 2015
    Applicant: Western Digital (Fremont), LLC
    Inventors: SHAOPING LI, YUANKAI ZHENG, GERARDO A. BERTERO, QUNWEN LENG, MICHAEL L. MALLARY, RONGFU XIAO, MING MAO, ZHIHONG ZHANG, ANUP G. ROY, CHEN JUNG CHIEN, ZHITAO DIAO, LING WANG
  • Patent number: 8760823
    Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a read sensor, at least one soft magnetic bias structure and at least one hard bias structure. The read sensor includes a sensor layer that has at least one edge in the track width direction along the ABS. The soft magnetic bias structure(s) are adjacent to the edge(s) of the sensor layer. The soft magnetic bias structure has a first permeability. The soft bias structure(s) are between the read sensor and the hard bias structure(s). The hard bias structure(s) are adjacent to a portion of the soft bias structure(s) and have a second permeability. The first permeability is at least ten multiplied by the second permeability.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: June 24, 2014
    Assignee: Western Digital (Fremont), LLC
    Inventors: Laurence L. Chen, Anup G. Roy, Yunfei Ding, Ming Mao, Amritpal S. Rana, Daniele Mauri
  • Patent number: 8611054
    Abstract: A magnetic read transducer is described with a magnetoresistive sensor that has a free layer, and an antiferromagnetically-coupled (AFC) soft bias layer for magnetically biasing the free layer. The free layer has a first edge in a track width direction along an air-bearing surface (ABS). At least a portion of the AFC soft bias layer is conformal to at least a portion of a second edge of the free layer, and situated to form a magnetic moment at an angle with respect to a center line of the free layer. The center line of the free layer extends in the same direction as the free layer first edge that is in the track width direction along the ABS.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: December 17, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Changhe Shang, Daniele Mauri, Kuok San Ho, Anup G. Roy, Ming Mao
  • Patent number: 8607438
    Abstract: A read sensor for a transducer is fabricated. The transducer has a field region and a sensor region corresponding to the sensor. A sensor stack is deposited. A hybrid mask including hard and field masks is provided. The hard mask includes a sensor portion covering the sensor region and a field portion covering the field region. The field mask covers the field portion of the hard mask. The field mask exposes the sensor portion of the hard mask and part of the sensor stack between the sensor and field regions. The sensor is defined from the sensor stack in a track width direction. Hard bias layer(s) are deposited. Part of the hard bias layer(s) resides on the field mask. Part of the hard bias layer(s) adjoining the sensor region is sealed. The field mask is lifted off. The transducer is planarized.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: December 17, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Wei Gao, Guanxiong Li, Ming Mao, Chih-Ching Hu, Guanghong Luo, Miao Wang, Zhihong Zhang, Anup G. Roy
  • Patent number: 8603593
    Abstract: A method for providing a hard bias structure is provided. The method comprises providing a seed layer for a hard bias layer, the seed layer having a seed layer lattice constant and a natural growth texture. The method further comprises depositing the hard bias layer for the hard bias structure on the seed layer, the natural growth texture corresponding to a texture for the hard bias layer. The hard bias layer has a bulk lattice constant. The step of providing the seed layer includes forming a first plasma of a first deposition gas configured to expand the seed layer lattice constant if the bulk lattice constant is greater than the seed layer constant. The step of depositing the hard bias layer includes forming a second plasma of a second deposition gas configured to expand the bulk lattice constant if the seed layer lattice constant is greater than the bulk lattice constant.
    Type: Grant
    Filed: September 17, 2012
    Date of Patent: December 10, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Anup G. Roy, Mahendra Pakala
  • Patent number: 8597528
    Abstract: A method and system for fabricating a magnetic transducer is described. A magnetic junction is defined from the magnetoresistive stack. The magnetic junction has a top and a plurality of sides. The step of defining the magnetic junction redeposits a portion of the magnetoresistive stack and forms fencing adjacent to the top of the magnetic junction. At least one hard bias structure is provided after the magnetic junction is defined. A first portion of the at least one hard bias structure is substantially adjacent to the magnetoresistive junction in a track-width direction. The magnetic junction is ion beam planarized, thereby substantially removing the fencing.
    Type: Grant
    Filed: March 30, 2011
    Date of Patent: December 3, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Anup G. Roy, Ming Mao
  • Patent number: 8270126
    Abstract: A method and system for providing a hard bias structure include providing a seed layer for a hard bias structure. The seed layer has a lattice constant and a natural growth texture. The method and system further include depositing the hard bias layer for the hard bias structure on the seed layer. The natural growth texture of the seed layer corresponds to a texture for the hard bias layer. The hard bias layer has a bulk lattice constant. Providing the seed layer includes forming a first plasma of a first deposition gas configured to expand the seed layer lattice constant if the bulk lattice constant is greater than the seed layer constant. Depositing the hard bias layer further includes forming a second plasma of a second deposition gas configured to expand the bulk lattice constant if the seed layer lattice constant is greater than the bulk lattice constant.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: September 18, 2012
    Assignee: Western Digital (Fremont), LLC
    Inventors: Anup G. Roy, Mahendra Pakala