Patents by Inventor Ari Aviram

Ari Aviram has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8058644
    Abstract: A nanostructure pattern which includes pairs of metal lines separated by identical gaps whose dimensions are in the nanometer range, can be prepared by providing a separating sacrificial layer, whose dimensions can be controlled precisely, in the separation gap between the first metal line and the second metal line. The sacrificial layer is removed at the end of the fabrication, leaving a precisely dimensioned gap between the lines.
    Type: Grant
    Filed: August 3, 2005
    Date of Patent: November 15, 2011
    Inventor: Ari Aviram
  • Patent number: 7824619
    Abstract: The present invention relates to a molecular sensor for detecting the presence of a target analyte comprising a nitro-containing explosive molecule, the sensor comprising: a support substrate; a pair of electrodes comprising (i) a first electrode and (ii) a second electrode, wherein at least one of (i) and (ii) is at the substrate; an electron donor (ED) molecule capable of forming an electron donor-acceptor (EDA) complex with the nitro-containing explosive molecule; and wherein the ED molecule is disposed between the electrodes and is attached to each electrode by an alligator clip comprising a pendant group, thereby forming a nanojunction between the electrodes; a detection means operably connected to the pair of electrodes, the detection means capable of detecting a change in the electrical resistance or in the capacitance of the sensor when the ED molecule forms an EDA complex with the explosive molecule, the sensor thereby detecting the presence of the explosive molecule.
    Type: Grant
    Filed: June 7, 2005
    Date of Patent: November 2, 2010
    Inventor: Ari Aviram
  • Patent number: 6989290
    Abstract: Electronic circuits based on molecular transistors, generally used in place of semiconductors. More particularly, the invention relates to a unique method of wiring of a three-terminal molecule (or an aggregate thereof) to serve as an electronic transistor, containing a gate electrode, a source electrode, and a drain electrode. The source electrode and drain electrode are fabricated from one metal and the gate electrode is fabricated from another metal. The usage of molecular properties in this context provides significant advantages over the fabrication methods of the prior art.
    Type: Grant
    Filed: November 15, 2003
    Date of Patent: January 24, 2006
    Inventor: Ari Aviram
  • Publication number: 20050106804
    Abstract: Electronic circuits based on molecular transistors, generally used in place of semiconductors. More particularly, the invention relates to a unique method of wiring of a three-terminal molecule (or an aggregate thereof) to serve as an electronic transistor, containing a gate electrode, a source electrode, and a drain electrode. The source electrode and drain electrode are fabricated from one metal and the gate electrode is fabricated from another metal. The usage of molecular properties in this context provides significant advantages over the fabrication methods of the prior art.
    Type: Application
    Filed: November 15, 2003
    Publication date: May 19, 2005
    Inventor: Ari Aviram
  • Patent number: 6821718
    Abstract: A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.
    Type: Grant
    Filed: September 9, 2003
    Date of Patent: November 23, 2004
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
  • Publication number: 20040048204
    Abstract: A negative resist composition, comprising:
    Type: Application
    Filed: September 9, 2003
    Publication date: March 11, 2004
    Applicant: International Business Machines
    Inventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
  • Patent number: 6689540
    Abstract: Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: February 10, 2004
    Assignee: International Business Machines Corporation
    Inventors: Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee W. Kwong, David R. Medeiros
  • Patent number: 6653045
    Abstract: A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: November 25, 2003
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
  • Patent number: 6503692
    Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
    Type: Grant
    Filed: June 7, 2002
    Date of Patent: January 7, 2003
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee Kwong, Wayne M. Moreau
  • Publication number: 20020187422
    Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
    Type: Application
    Filed: June 7, 2002
    Publication date: December 12, 2002
    Applicant: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee Kwong, Wayne M. Moreau
  • Patent number: 6458907
    Abstract: Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
    Type: Grant
    Filed: October 3, 2000
    Date of Patent: October 1, 2002
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Ranee W. Kwong
  • Publication number: 20020115017
    Abstract: A negative resist composition, comprising:
    Type: Application
    Filed: February 16, 2001
    Publication date: August 22, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
  • Patent number: 6436605
    Abstract: The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.
    Type: Grant
    Filed: July 12, 1999
    Date of Patent: August 20, 2002
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Ari Aviram, Edward D. Babich, Timothy Allan Brunner, Thomas Benjamin Faure, C. Richard Guarnieri, Ranee W. Kwong, Karen E. Petrillo
  • Patent number: 6420084
    Abstract: The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: July 16, 2002
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee Kwong, Robert N. Lang, Arpan P. Mahorowala, David R. Medeiros, Wayne M. Moreau
  • Patent number: 6420088
    Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: July 16, 2002
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee Kwong, Wayne M. Moreau
  • Publication number: 20020090574
    Abstract: Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
    Type: Application
    Filed: January 9, 2002
    Publication date: July 11, 2002
    Inventors: Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee W. Kwong, David R. Medeiros
  • Patent number: 6348299
    Abstract: Photoresist compositions of improved reactive ion etching comprising polymers of 2-hydroxyalkyl methacrylate and/or 2-hydroxyalkylacrylate and a titanate, zirconate and/or hafnate are provided. The photoresist compositions are used for forming positive lithographic patterns.
    Type: Grant
    Filed: July 12, 1999
    Date of Patent: February 19, 2002
    Assignee: International Business Machines Corporation
    Inventors: Ari Aviram, Inna V. Babich
  • Patent number: 6346362
    Abstract: Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
    Type: Grant
    Filed: June 15, 2000
    Date of Patent: February 12, 2002
    Assignee: International Business Machines Corporation
    Inventors: Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee W. Kwong, David R. Medeiros
  • Patent number: 6280901
    Abstract: Positive lithographic patterns are produced by imagewise exposing to actinic light, x-ray or e-beam a polymer having pendant recurring groups selected from the group consisting of —COO—CH2—CH(OH)—(CH2)x—H wherein x is 0-20; —COO—CH2—CH(OH)—(CH2)y—HE—(CH2)z—H; and mixtures thereof; wherein HE is O or S; and each y and z individually is 1-18; and mixtures thereof; and then developing the polymer in an aqueous base developer. The developer can be any of the conventional or commonly used ones as well as the special developers discussed below. Positive lithographic patterns are also produced by imagewise exposing to actinic light, x-ray or e-beam a photosensitive polymeric material to provide free carboxylic acid groups; and then developing by contacting with an aqueous developer solution of about 0.
    Type: Grant
    Filed: April 27, 2000
    Date of Patent: August 28, 2001
    Assignee: International Business Machines Corporation
    Inventors: Ari Aviram, Andrew T. S. Pomerene, David Earle Seeger
  • Patent number: 6280908
    Abstract: A method of improving the etch resistance of a patterned imageable resist prior to patterning an underlying substrate layer is provided. Specifically, the method employed by the present invention comprises applying a layer of an imageable resist to a substrate layer; patterning the layer of imageable resist by removing selective areas thereof; and treating the patterned imageable resist with an atmosphere comprising molecules of a hardening agent so as to obtain a hardened resist surface which etches at a slower rate than that of the untreated resist.
    Type: Grant
    Filed: April 15, 1999
    Date of Patent: August 28, 2001
    Assignee: International Business Machines Corporation
    Inventors: Ari Aviram, Michael Joseph Rooks