Patents by Inventor Arichika Ishiba

Arichika Ishiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160149046
    Abstract: According to one embodiment, a thin-film transistor and a method of manufacturing the thin-film transistor provided herein achieve enhanced reliability by preventing a disconnection in a gate insulating film at a position corresponding to an end surface of an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. The channel region is placed between the source region and the drain region. The gate insulating film covers the oxide semiconductor layer in a range from at least a part of an upper surface to an end surface continuous with the upper surface of the oxide semiconductor layer. The oxide semiconductor layer is formed so as to have an oxygen concentration that becomes lower from a top side to a bottom side and the end surface is inclined so as to diverge from the top side to the bottom side.
    Type: Application
    Filed: November 18, 2015
    Publication date: May 26, 2016
    Applicant: Japan Display Inc.
    Inventors: Akihiro HANADA, Masayoshi Fuchi, Hajime Watakabe, Takashi Okada, Arichika Ishiba