Arne Fleissner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A method of forming a top-gate transistor over a substrate comprises: forming a source and a drain electrode; forming an organic stack over the source and drain electrodes comprising an organic semiconductor layer and an organic dielectric layer over the organic semiconductor layer; forming a gate bi-layer electrode comprising a first gate layer of a first material and a second gate layer of a different second material; selectively depositing regions of a mask material over the gate bi-layer electrode; performing a first plasma etch step to remove portions of the first gate layer using the mask material as a mask; and performing a second plasma etch step to remove portions of the second gate layer and organic stack using the first gate layer as a mask, thereby patterning the gate bi-layer electrode and the organic stack.
Abstract: This invention generally relates to planarisation of a surface of a substrate. In an embodiment of planarising a surface region of a substrate, the substrate having a body on a portion of said surface region, the method comprises: modifying the wetability of a surface of said body with respect to a liquid planariser composition by providing a surface modifying layer such as a self-assembled monolayer thereon; and then depositing the liquid planariser composition on said substrate and said body such that the planariser composition wets said surface region, wherein said surface modifying layer determines a contact angle of said liquid planariser composition to said surface of said body such that the deposited liquid planariser composition is repelled from said surface of said body.
March 21, 2012
March 27, 2014
Cambridge Display Technology Limited
Arne Fleissner, Surama Malik, Colin Baker, Laurence Scullion, Jeremy Burroughes