Patents by Inventor Artak Isoyan
Artak Isoyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10365557Abstract: A method, system or computer usable program product for building a fast lithography OPC model that predicts semiconductor manufacturing process outputs on silicon wafers including providing a first principles model of the semiconductor manufacturing process, providing a set of empirical data for storage in memory, utilizing a processor to develop a rigorous model for a process condition from the first principles model and the set of empirical data, and utilizing the processor running the rigorous model to generate emulated data for the process condition to develop a virtual model for predicting the semiconductor manufacturing process outputs.Type: GrantFiled: February 19, 2014Date of Patent: July 30, 2019Assignee: SYNOPSYS, INC.Inventors: Artak Isoyan, Lawrence S. Melvin, III
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Patent number: 9940694Abstract: Systems and techniques for performing resolution enhancement on target patterns based on holographic imaging technique (HIT) are described. During operation, an electronic design automation (EDA) tool can compute an in-line hologram of the target patterns based on parameters associated with a photolithography process that is used in a semiconductor manufacturing process, wherein the semiconductor manufacturing process is to be used for printing the target patterns on a semiconductor wafer. Next, the EDA tool can determine the mask patterns based on the in-line hologram.Type: GrantFiled: May 22, 2015Date of Patent: April 10, 2018Assignee: Synopsys, Inc.Inventors: Artak Isoyan, Lawrence S. Melvin, III
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Patent number: 9679086Abstract: A photolithographic modeling process is disclosed. Optical and non-optical parts of a model of the photolithographic process are calibrated. With the non-optical part of the model one or more model corrections are determined between (i) modeled critical dimension data from an aerial image generated by the optical part of the model, and (ii) empirical critical dimension data from tangible structures made at only a first process combination of a first dose and a first defocus in the photolithographic process. Critical dimension data of the photolithographic process are predicted at a second process combination of a second dose and a second defocus in the photolithographic process.Type: GrantFiled: May 23, 2014Date of Patent: June 13, 2017Assignee: SYNOPSYS, INC.Inventor: Artak Isoyan
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Patent number: 9216590Abstract: An apparatus and method for nanopatterning of substrates using the demagnified Talbot effect, wherein: (a) large arrays of nanostructures can rapidly be printed; (b) short extreme ultraviolet wavelengths permits sub-100 nm spatial resolution; (c) the de-magnification factor can be continuously adjusted, that is, continuously scaled; (d) the patterning is the effect of the collective diffraction of numerous tiled units that constitute the periodic array, giving rise to error resistance such that a defect in one unit is averaged over the area of the mask and the print does not show any defects; (e) the Talbot mask does not wear out since the method is non-contact; and (f) the feature sizes on the mask do not have to be as small as the feature sizes desired on the target, are described. The apparatus includes a source of coherent radiation having a chosen wavelength directed onto a focusing optic, the reflected converging light passing through a Talbot mask and impinging on a target substrate.Type: GrantFiled: March 3, 2015Date of Patent: December 22, 2015Assignees: COLORADO STATE UNIVERSITY RESEARCH FOUNDATION, SYNOPSYS, INC.Inventors: Mario C. Marconi, Lukasz Urbanski, Jorge J. Rocca, Artak Isoyan
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Publication number: 20150339802Abstract: Systems and techniques for performing resolution enhancement on target patterns based on holographic imaging technique (HIT) are described. During operation, an electronic design automation (EDA) tool can compute an in-line hologram of the target patterns based on parameters associated with a photolithography process that is used in a semiconductor manufacturing process, wherein the semiconductor manufacturing process is to be used for printing the target patterns on a semiconductor wafer. Next, the EDA tool can determine the mask patterns based on the in-line hologram.Type: ApplicationFiled: May 22, 2015Publication date: November 26, 2015Applicant: Synopsys, Inc.Inventors: Artak Isoyan, Lawrence S. Melvin, III
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Publication number: 20150251441Abstract: An apparatus and method for nanopatterning of substrates using the demagnified Talbot effect, wherein: (a) large arrays of nanostructures can rapidly be printed; (b) short extreme ultraviolet wavelengths permits sub-100 nm spatial resolution; (c) the de-magnification factor can be continuously adjusted, that is, continuously scaled; (d) the patterning is the effect of the collective diffraction of numerous tiled units that constitute the periodic array, giving rise to error resistance such that a defect in one unit is averaged over the area of the mask and the print does not show any defects; (e) the Talbot mask does not wear out since the method is non-contact; and (f) the feature sizes on the mask do not have to be as small as the feature sizes desired on the target, are described. The apparatus includes a source of coherent radiation having a chosen wavelength directed onto a focusing optic, the reflected converging light passing through a Talbot mask and impinging on a target substrate.Type: ApplicationFiled: March 3, 2015Publication date: September 10, 2015Inventors: Mario C. Marconi, Lukasz Urbanski, Jorge J. Rocca, Artak Isoyan
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Patent number: 9007562Abstract: An apparatus and method for nanopatterning of substrates using the demagnified Talbot effect, wherein: (a) large arrays of nanostructures can rapidly be printed; (b) short extreme ultraviolet wavelengths permits sub-100 nm spatial resolution; (c) the de-magnification factor can be continuously adjusted, that is, continuously scaled; (d) the patterning is the effect of the collective diffraction of numerous tiled units that constitute the periodic array, giving rise to error resistance such that a defect in one unit is averaged over the area of the mask and the print does not show any defects; (e) the Talbot mask does not wear out since the method is non-contact; and (f) the feature sizes on the mask do not have to be as small as the feature sizes desired on the target, are described. The apparatus includes a source of coherent radiation having a chosen wavelength directed onto a focusing optic, the reflected converging light passing through a Talbot mask and impinging on a target substrate.Type: GrantFiled: April 26, 2013Date of Patent: April 14, 2015Assignees: Colorado State University Research Foundation, Synopsys, Inc.Inventors: Mario C. Marconi, Lukasz Urbanski, Jorge J. Rocca, Artak Isoyan
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Publication number: 20140257544Abstract: A photolithographic modeling process is disclosed. Optical and non-optical parts of a model of the photolithographic process are calibrated. With the non-optical part of the model one or more model corrections are determined between (i) modeled critical dimension data from an aerial image generated by the optical part of the model, and (ii) empirical critical dimension data from tangible structures made at only a first process combination of a first dose and a first defocus in the photolithographic process. Critical dimension data of the photolithographic process are predicted at a second process combination of a second dose and a second defocus in the photolithographic process.Type: ApplicationFiled: May 23, 2014Publication date: September 11, 2014Applicant: SYNOPSYS, INC.Inventor: Artak Isoyan
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Publication number: 20140244226Abstract: A method, system or computer usable program product for building a fast lithography OPC model that predicts semiconductor manufacturing process outputs on silicon wafers including providing a first principles model of the semiconductor manufacturing process, providing a set of empirical data for storage in memory, utilizing a processor to develop a rigorous model for a process condition from the first principles model and the set of empirical data, and utilizing the processor running the rigorous model to generate emulated data for the process condition to develop a virtual model for predicting the semiconductor manufacturing process outputs.Type: ApplicationFiled: February 19, 2014Publication date: August 28, 2014Applicant: Synopsys Inc.Inventors: Artak Isoyan, Lawrence S. Melvin, III
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Patent number: 8739076Abstract: A photolithographic modeling process is disclosed. Optical and non-optical parts of a model of the photolithographic process are calibrated. With the non-optical part of the model one or more model corrections are determined between (i) modeled critical dimension data from an aerial image generated by the optical part of the model, and (ii) empirical critical dimension data from tangible structures made at only a first process combination of a first dose and a first defocus in the photolithographic process. Critical dimension data of the photolithographic process are predicted at a second process combination of a second dose and a second defocus in the photolithographic process.Type: GrantFiled: September 11, 2012Date of Patent: May 27, 2014Assignee: Synopsys, Inc.Inventor: Artak Isoyan
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Publication number: 20140075398Abstract: A photolithographic modeling process is disclosed. Optical and non-optical parts of a model of the photolithographic process are calibrated. With the non-optical part of the model one or more model corrections are determined between (i) modeled critical dimension data from an aerial image generated by the optical part of the model, and (ii) empirical critical dimension data from tangible structures made at only a first process combination of a first dose and a first defocus in the photolithographic process. Critical dimension data of the photolithographic process are predicted at a second process combination of a second dose and a second defocus in the photolithographic process.Type: ApplicationFiled: September 11, 2012Publication date: March 13, 2014Applicant: Synopsys, Inc.Inventor: Artak Isoyan
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Patent number: 8473271Abstract: A lithography model uses a transfer function to map exposure energy dose to the thickness of remaining photoresist after development; while allowing the flexibility to account for other physical processes. In one approach, the model is generated by fitting empirical data. The model may be used in conjunction with an aerial image to obtain a three-dimensional profile of the remaining photoresist thickness after the development process. The lithography model is generally compact, yet capable of taking into account various physical processes associated with the photoresist exposure and/or development process for more accurate simulation.Type: GrantFiled: March 12, 2010Date of Patent: June 25, 2013Assignee: Synopsys, Inc.Inventors: Artak Isoyan, Lawrence S. Melvin, III
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Publication number: 20110224963Abstract: A lithography model uses a transfer function to map exposure energy dose to the thickness of remaining photoresist after development; while allowing the flexibility to account for other physical processes. In one approach, the model is generated by fitting empirical data. The model may be used in conjunction with an aerial image to obtain a three-dimensional profile of the remaining photoresist thickness after the development process. The lithography model is generally compact, yet capable of taking into account various physical processes associated with the photoresist exposure and/or development process for more accurate simulation.Type: ApplicationFiled: March 12, 2010Publication date: September 15, 2011Applicant: SYNOPSYS, INC.Inventors: Artak Isoyan, Lawrence S. Melvin, III