Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract: A rotary union is disclosed for use in semiconductor processing applications. The rotary is coupled between a platen base and a platen of a rotating platen assembly. The rotary union includes a coiled flexible tube member for passing a flow of cryogenic fluid to the platen for cooling during an ion implant procedure. The coiled flexible tube member has a first configuration associated with a non-rotated position of the platen and a second configuration associated with a rotated position of the platen. In the first configuration the coiled flexible tube member has a first bend radius, and in the second configuration the coiled flexible tube member has a second bend radius that is smaller than first bend radius. The rotary union also includes a base with a peripheral wall that restricts movement of the coiled flexible tube member as it cycles between the first and second configurations.

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract: A rotary union is disclosed for use in semiconductor processing applications. The rotary is coupled between a platen base and a platen of a rotating platen assembly. The rotary union includes a coiled flexible tube member for passing a flow of cryogenic fluid to the platen for cooling during an ion implant procedure. The coiled flexible tube member has a first configuration associated with a non-rotated position of the platen and a second configuration associated with a rotated position of the platen. In the first configuration the coiled flexible tube member has a first bend radius, and in the second configuration the coiled flexible tube member has a second bend radius that is smaller than first bend radius. The rotary union also includes a base with a peripheral wall that restricts movement of the coiled flexible tube member as it cycles between the first and second configurations.

Abstract: A rotary union is disclosed for use in semiconductor processing applications. The rotary is coupled between a platen base and a platen of a rotating platen assembly. The rotary union includes a coiled flexible tube member for passing a flow of cryogenic fluid to the platen for cooling during an ion implant procedure. The coiled flexible tube member has a first configuration associated with a non-rotated position of the platen and a second configuration associated with a rotated position of the platen. In the first configuration the coiled flexible tube member has a first bend radius, and in the second configuration the coiled flexible tube member has a second bend radius that is smaller than first bend radius. The rotary union also includes a base with a peripheral wall that restricts movement of the coiled flexible tube member as it cycles between the first and second configurations.

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract: A rotary union is disclosed for use in semiconductor processing applications. The rotary is coupled between a platen base and a platen of a rotating platen assembly. The rotary union includes a coiled flexible tube member for passing a flow of cryogenic fluid to the platen for cooling during an ion implant procedure. The coiled flexible tube member has a first configuration associated with a non-rotated position of the platen and a second configuration associated with a rotated position of the platen. In the first configuration the coiled flexible tube member has a first bend radius, and in the second configuration the coiled flexible tube member has a second bend radius that is smaller than first bend radius. The rotary union also includes a base with a peripheral wall that restricts movement of the coiled flexible tube member as it cycles between the first and second configurations.

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a ground pin that extends two regions of a platen that support the substrate. The ground pin may comprise a pin body; and a sleeve comprising an upper portion, a side portion, and a lower portion, the sleeve being configured to fit around the pin body, the sleeve including a fluid channel configured to transport fluid between the upper portion and the lower portion of the sleeve.

Abstract: Techniques for changing temperature of a platen are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for changing temperature of a platen comprising a platen and one or more movable thermal pads comprising one or more thermal fluid channels to carry a thermal fluid configured to affect a temperature of the platen.

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract: Techniques for changing temperature of a platen are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for changing temperature of a platen comprising a platen and one or more movable thermal pads comprising one or more thermal fluid channels to carry a thermal fluid configured to affect a temperature of the platen.