Patents by Inventor Arye Rosen

Arye Rosen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4805084
    Abstract: A device for converting DC to RF has a monolithic PIN diode adapted to be coupled to a DC supply. The diode receives light switching pulses and is coupled to a monolithic resonator. The monolithic form provides compactness and reliability, while the diode, which is reversed biased when OFF, prevents substrate leakage currents. The diode and the resonator can be made in a single substrate, e.g., silicon, or in different substrates, e.g., silicon for the diode to obtain a long carrier lifetime and, thus, minimize the light pulse repetition rate, and GaAs for the resonator to obtain a high Q. The resonator can also act as an impedance transformer.
    Type: Grant
    Filed: April 25, 1988
    Date of Patent: February 14, 1989
    Assignee: General Electric Company
    Inventors: Arye Rosen, Chi H. Lee
  • Patent number: 4794261
    Abstract: A circuit for protecting a protected circuit against radiation has a PIN diode series coupled to a laser, which is optically coupled to a photodiode. The photodiode is coupled to the protected circuit. When radiation occurs, the resistance of the PIN diode increases, which causes the laser to cease emitting light. In turn, the resistance of the photodiode increases, thereby decreasing the current from a power supply through the protected circuit.
    Type: Grant
    Filed: April 24, 1987
    Date of Patent: December 27, 1988
    Assignee: General Electric Company
    Inventor: Arye Rosen
  • Patent number: 4751513
    Abstract: The characteristics of antennas are modified by photosensitive electrical elements connected to the radiating elements. The photosensitive elements are biased by light, by direct electrical bias, or both. The photosensitive element may be a PIN diode. The bias may be applied by general illumination or conducted by a fiber optic cable.
    Type: Grant
    Filed: May 2, 1986
    Date of Patent: June 14, 1988
    Assignee: RCA Corporation
    Inventors: Afshin S. Daryoush, Peter R. Herczfeld, Arye Rosen
  • Patent number: 4675628
    Abstract: A monolithic chip phase shifter consists of a PIN diode which is laterally elongated and shaped into a microstrip-like transmission line. The transmission line has characteristics determined in part by the capacitances associated with the intrinsic layer of the diode. Alternating-current (AC) signals are coupled through the transmission line. Direct-voltage reverse bias, no bias or direct-current forward bias are applied to select the appropriate value of equivalent shunt capacitance of the transmission line to provide the desired phase shift of the AC signals passing therethrough. A high-impedance coupling device couples the bias to the transmission line to prevent leakage of signal to the bias source.
    Type: Grant
    Filed: February 28, 1985
    Date of Patent: June 23, 1987
    Assignee: RCA Corporation
    Inventor: Arye Rosen
  • Patent number: 4675624
    Abstract: A TEM-mode transmission line such as a microstrip or coplanar line includes a pair of conductors, at least one of which is elongated. A semiconductor junction or junctions are coupled across the conductors. If a single junction is used, the junction may be laterally elongated or distributed. If discrete semiconductor junction devices are used, plural devices may be coupled across the transmission line. The capacitance of the junction(s) controls the phase shift imparted by the transmission lines to AC signals traversing the line. The capacitance of the semiconductor junctions in controlled by light coupled into the junction region. The light is coupled to the junction region by fiber-optic cables or by means of light illuminating the junction.
    Type: Grant
    Filed: March 29, 1985
    Date of Patent: June 23, 1987
    Assignees: RCA Corporation, Drexel University
    Inventors: Arye Rosen, Peter R. Herczfeld
  • Patent number: 4643186
    Abstract: Percutaneous transluminal electromagnetic (EM) catheter angioplasty is performed using radio frequency (RF) or microwave frequency power. The catheter includes a coaxial transmission line terminated at its distal end in an antenna. The antenna includes an extension of the coaxial center conductor past the outer conductor. A treatment includes orienting the catheter in the lumen of a cardiac artery adjacent stenotic plaque, and applying sufficient electric power to cause arcing for electroabrasion of the plaque. Another catheter includes a balloon located at the distal end of the the catheter and surrounding the antenna. In use, the balloon is pressurized so as to apply lumen-expanding force against the plaque. The antenna radiates EM energy, heating and softening the plaque, thereby allowing the plaque to be compressed and the stenotic lumen to have increased patency.
    Type: Grant
    Filed: October 30, 1985
    Date of Patent: February 17, 1987
    Assignee: RCA Corporation
    Inventors: Arye Rosen, Paul Walinsky
  • Patent number: 4641649
    Abstract: A medical procedure for treatment of tachycardia (rapid heartbeat) or cardiac disrhythmia uses a catheter which includes a flexible coaxial transmission line (coax) terminated by an antenna. The antenna and coax are introduced into a chamber of the heart. The antenna is brought into contact with a wall of the heart. Action potentials generated by the heart are coupled through the antenna and the coaxial cable to a standard electrocardiograph apparatus for display. Other electrodes placed about the body also produce action potentials which are displayed by the electrocardiograph. The position of the antenna in the chamber of the heart is adjusted with the aid of the displayed action potentials until the antenna is in contact with the region to be ablated or injured as indicated by its characteristic electrical signature.
    Type: Grant
    Filed: October 30, 1985
    Date of Patent: February 10, 1987
    Assignee: RCA Corporation
    Inventors: Paul Walinsky, Arye Rosen, Arnold J. Greenspon
  • Patent number: 4384400
    Abstract: Disclosed is an array of avalanche diodes and its method of manufacture which results in plural pairs of series connected mesa-etched avalanche (TRAPATT) diodes being selectively connected in parallel by metallized air bridges for increasing the impedance level and thereby the peak and average power level available from microwave oscillators and amplifiers configured therefrom. The various series connected diodes are placed in near proximity to respective neighboring diode pairs to reduce parasitics but at the same time the spacing is made sufficiently large to prevent thermal spreading of one diode pair to overlap that of the adjacent diode pair. The metallized air bridges in addition to providing a low inductance interconnection, provide an integrated heat capacitance which is necessary for high power operation.
    Type: Grant
    Filed: October 7, 1981
    Date of Patent: May 24, 1983
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Arye Rosen, Jerome B. Klatskin
  • Patent number: 4381952
    Abstract: A low conductivity, first conductivity type epitaxial layer is formed on a substrate of high conductivity, first conductivity type semiconductor material. Conductivity modifiers of second conductivity type are then implanted into the epitaxial layer so as to create a PN junction in the epitaxial layer. The substrate is next thinned, and conductivity modifiers of first conductivity type are implanted into the thinned surface so as to form a very high conductivity layer at the thinned surface.
    Type: Grant
    Filed: May 11, 1981
    Date of Patent: May 3, 1983
    Assignee: RCA Corporation
    Inventor: Arye Rosen
  • Patent number: 4319265
    Abstract: Disclosed is an array of avalanche diodes and its method of manufacture wh results in plural pairs of series connected mesa-etched avalanche (TRAPATT) diodes being selectively connected in parallel by metallized air bridges for increasing the impedance level and thereby the peak and average power level available from microwave oscillators and amplifiers configured therefrom. The various series connected diodes are placed in near proximity to respective neighboring diode pairs to reduce parasitics but at the same time the spacing is made sufficiently large to prevent thermal spreading of one diode pair to overlap that of the adjacent diode pair. The metallized air bridges in addition to providing a low inductance interconnection, provide an integrated heat capacitance which is necessary for high power operation.
    Type: Grant
    Filed: December 6, 1979
    Date of Patent: March 9, 1982
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Arye Rosen, Jerome B. Klatskin
  • Patent number: 4255714
    Abstract: A microwave frequency discriminator comprising a dual-gate field effect transistor (FET) amplifier, bias circuits and a detector. The FET is biased to produce an output RF signal within a predetermined frequency bandwidth in response to an input RF signal. A limiter provides a substantially constant power level of the input RF signal to the FET. A detector biasing circuit is used to match electronically the output impedance of the FET to the input impedance of the detector. At such impedance conditions a dc output voltage of the detector varies substantially linearly throughout the frequency bandwidth as a function of the frequency of the input RF signal, approximating the characteristic of a frequency discriminator.
    Type: Grant
    Filed: February 21, 1979
    Date of Patent: March 10, 1981
    Assignee: RCA Corporation
    Inventor: Arye Rosen
  • Patent number: 4237600
    Abstract: A semiconductor wafer is appropriately doped to create a P-N or P-I-N junction, and metallized on both its planar surfaces with electrode material. The wafer is then bonded to a second similarly processed wafer. Without damaging the semiconductor material, the stacked wafer is processed so as to delineate a plurality of diodes on each side of the center metallization, such that the diodes on each side are registered with each other. The center metallization is then cut so as to yield a plurality of stacked semiconductor diodes.
    Type: Grant
    Filed: November 16, 1978
    Date of Patent: December 9, 1980
    Assignee: RCA Corporation
    Inventors: Arye Rosen, Anna M. Gombar, Edward Mykietyn
  • Patent number: 4230505
    Abstract: A method of making an Impatt diode capable of operating at millimeter wave frequencies in which an epitaxial layer of the thickness desired for the diode is deposited on a substrate. Conductivity modifiers are implanted into the epitaxial layer to form one active region and a high conductivity region between the one active region and the surface of the epitaxial layer. A heat sink which also serves as a handle is formed on the epitaxial layer. The substrate is removed and conductivity modifiers are implanted into the other side of the epitaxial layer to the other active region and a high conductivity region between the other active region and the other surface of the epitaxial layer. After the implants the epitaxial layer is annealed. After the first implants the epitaxial layer may be annealed by either thermal or laser annealing. However, after the second implants the epitaxial layer must be laser annealed.
    Type: Grant
    Filed: October 9, 1979
    Date of Patent: October 28, 1980
    Assignee: RCA Corporation
    Inventors: Chung P. Wu, Arye Rosen
  • Patent number: 4228805
    Abstract: A method of measuring fluid perfusion of tissue by irradiating the tissue with microwave energy of a predetermined rate, amplitude and frequency to uniformly heat a given volume of said tissue, interrupting the irradiation and measuring the rate of temperature decay of said given volume of tissue as a measure of fluid perfusion of the given volume of tissue.
    Type: Grant
    Filed: November 8, 1978
    Date of Patent: October 21, 1980
    Assignee: RCA Corporation
    Inventors: Arye Rosen, William P. Santamore
  • Patent number: 4167681
    Abstract: A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a dual gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input power variation in the saturation region. A number of FET cascaded stages may be utilized to reduce this power output variation. A small signal amplifier including a number of FET cascaded stages may be employed in the limiter to increase the power level to that gain or drive level compatible with the saturated FET stages.
    Type: Grant
    Filed: October 3, 1977
    Date of Patent: September 11, 1979
    Assignee: RCA Corporation
    Inventors: Herbert J. Wolkstein, Arye Rosen, Jitendra Goel
  • Patent number: 4162412
    Abstract: A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a single gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input power variation in the saturation region. A number of FET cascaded stages may be utilized to reduce this power output variation. A small signal amplifier including a number of FET cascaded stages may be employed in the limiter to increase the power level to that gain or drive level compatible with the saturated FET stages.
    Type: Grant
    Filed: October 3, 1977
    Date of Patent: July 24, 1979
    Assignee: RCA Corporation
    Inventors: Daniel D. Mawhinney, Herbert J. Wolkstein, Arye Rosen, Zygmond Turski
  • Patent number: 4110700
    Abstract: A microwave frequency discriminator comprising a field effect transistor (FET) amplifier including an electronically variable capacitor (varactor), a biasing circuit and a detector. The FET is biased to generate an output RF signal within a predetermined frequency bandwidth in response to an input RF signal of substantially constant power level. The variable capacitor is biased to electronically provide a predetermined impedance to the transistor to augment the frequency roll-off characteristic of the FET. The biasing circuit is used to electronically match the impedance of the FET output to the input of the detector. At such impedance conditions the dc output voltage of the detector varies substantially linearly throughout the frequency bandwidth as a function of the frequency of the input RF signal, approximating the characteristic of a frequency discriminator.
    Type: Grant
    Filed: October 25, 1977
    Date of Patent: August 29, 1978
    Assignee: RCA Corporation
    Inventors: Arye Rosen, Edward Mykietyn
  • Patent number: 4085377
    Abstract: A microwave frequency discriminator using a one port active device amplifier including a circulator for coupling an input RF signal of substantially constant power level into the amplifier and an output RF signal out from the amplifier. The discriminator further comprises input and output matching networks connected to the circulator and a detector for generating a D.C. signal as a function of the incoming signal frequency. The input and output impedance matching networks are formed to provide selected impedance conditions to the amplifier such that the power-frequency response of the amplifier varies substantially linearly approximating a frequency discriminator characteristic throughout a predetermined frequency bandwidth.
    Type: Grant
    Filed: September 13, 1976
    Date of Patent: April 18, 1978
    Assignee: RCA Corporation
    Inventors: Zygmond Turski, Arye Rosen
  • Patent number: 4080722
    Abstract: A metal film is deposited on both sides of a semiconductor wafer. A conductive support layer, e.g. gold, is deposited on one of the metal film layers. Using standard procedures, the semiconductor material is then etched to form a plurality of semiconductor devices on the support. A photoresist is next applied over the device side of the support. Windows are opened into the photoresist above each of the devices. A gold wire is attached near the edge of each device so that the devices are each electrically connected in parallel to all of said devices and to said support. A copper heat capacitor is now plated on each device. The gold wires and the photoresist are removed, leaving a copper heat capacitor on the semiconductor device. A copper heat can be formed on the device, with or without formation of the copper heat capacitor, but always after formation of the device per se.
    Type: Grant
    Filed: March 22, 1976
    Date of Patent: March 28, 1978
    Assignee: RCA Corporation
    Inventors: Jerome Barnard Klatskin, Arye Rosen
  • Patent number: 4053841
    Abstract: A microwave frequency discriminator comprising a field effect transistor (FET) amplifier including an input impedance shaping network, a biasing circuit and a detector. The FET is biased to generate an output RF signal within a predetermined frequency bandwidth in response to an input RF signal of substantially constant power level. The input shaping network is formed to augment the frequency gain roll-off characteristic of the FET and the biasing circuit is used to electronically match the impedance of the FET output to the input of the detector. At such conditions of matched impedances the output dc voltage of the detector varies substantially linearly throughout the frequency bandwidth as a function of the frequency of the input RF signal approximating the characteristic of a frequency discriminator.
    Type: Grant
    Filed: September 13, 1976
    Date of Patent: October 11, 1977
    Assignee: RCA Corporation
    Inventors: Arye Rosen, Louis Sebastian Napoli