Patents by Inventor Ashishek SHARMA

Ashishek SHARMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RRAM memory cell and process to increase RRAM material area in an RRAM memory cell
    Patent number: 11417705
    Abstract: A memory cell is disclosed. The memory cell includes a word line contact, a cylindrical electrode having a top region and a bottom region, and RRAM material covering the surface of the cylindrical electrode from the top region to the bottom region. A select transistor contact is coupled to the bottom region of the cylindrical electrode.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: August 16, 2022
    Assignee: Intel Corporation
    Inventors: Brian Doyle, Prashant Majhi, Elijah Karpov, Ravi Pillarisetty, Ashishek Sharma
  • RRAM MEMORY CELL AND PROCESS TO INCREASE RRAM MATERIAL AREA IN AN RRAM MEMORY CELL
    Publication number: 20200105834
    Abstract: A memory cell is disclosed. The memory cell includes a word line contact, a cylindrical electrode having a top region and a bottom region, and RRAM material covering the surface of the cylindrical electrode from the top region to the bottom region. A select transistor contact is coupled to the bottom region of the cylindrical electrode.
    Type: Application
    Filed: September 28, 2018
    Publication date: April 2, 2020
    Inventors: Brian DOYLE, Prashant MAJHI, Elijah KARPOV, Ravi PILLARISETTY, Ashishek SHARMA