Patents by Inventor Ashutosh Malshe

Ashutosh Malshe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10331553
    Abstract: An example apparatus for garbage collection can include a memory including a plurality of mixed mode blocks. The example apparatus can include a controller. The controller can be configured to write a first portion of sequential host data to the plurality of mixed mode blocks of the memory in a single level cell (SLC) mode. The controller can be configured to write a second portion of sequential host data to the plurality of mixed mode blocks in an XLC mode. The controller can be configured to write the second portion of sequential host data by performing a garbage collection operation. The garbage collection operation can include adding more blocks to a free block pool than a quantity of blocks that are written to in association with writing the second portion of sequential host data to the plurality of mixed mode blocks.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: June 25, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Kishore K. Muchherla, Sampath K. Ratnam, Peter Feeley, Michael G. Miller, Daniel J. Hubbard, Renato C. Padilla, Ashutosh Malshe, Harish R. Singidi
  • Patent number: 10325668
    Abstract: Apparatuses and methods for operating mixed mode blocks. One example method can include tracking single level cell (SLC) mode cycles and extra level cell (XLC) mode cycles performed on the mixed mode blocks, maintaining a mixed mode cycle count corresponding to the mixed mode blocks, and adjusting the mixed mode cycle count differently for mixed mode blocks operated in a SLC mode than for mixed blocks operated in a XLC mode.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: June 18, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Kishore K. Muchherla, Ashutosh Malshe, Preston A. Thomson, Michael G. Miller, Gary F. Besinga, Scott A. Stoller, Sampath K. Ratnam, Renato C. Padilla, Peter Feeley
  • Publication number: 20190171576
    Abstract: An offset can be determined based on a characteristic of a memory system associated with a system block. The system block corresponds to logical blocks. A first group of physical blocks of the memory system can be assigned to a group of the plurality of logical blocks of the system block. A second group of physical blocks of the memory system can be identified at a location that is based on the offset and the first group of physical blocks. Furthermore, the second group of physical blocks of the memory system can be assigned to another group of the plurality of logical blocks associated with the system block. Data can be stored by using the system block with the first group and second group of physical blocks.
    Type: Application
    Filed: November 14, 2018
    Publication date: June 6, 2019
    Inventors: Ashutosh Malshe, Karl D. Schuh
  • Patent number: 10303535
    Abstract: Apparatus include controllers configured to iteratively program a group of memory cells to respective desired data states; determine whether a power loss to the apparatus is indicated while iteratively programming the group of memory cells; and if a power loss to the apparatus is indicated, to change the desired data state of the particular memory cell before continuing with the programming. Apparatus further include controllers configured to read a particular memory cell of a last written page of memory cells, determine whether a threshold voltage of the particular memory cell is less than a particular voltage level, and to mark the last written page of memory cells as affected by power loss during a programming operation of the last written page of memory cells when the threshold voltage of the particular memory cell is determined to be higher than the particular voltage level.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: May 28, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Michael G. Miller, Ashutosh Malshe, Violante Moschiano, Peter Feeley, Gary F. Besinga, Sampath K. Ratnam, Walter Di-Francesco, Renato C. Padilla, Jr., Yun Li, Kishore Kumar Muchherla
  • Patent number: 10283205
    Abstract: Devices and techniques for initiating and controlling preemptive idle time read scans in a flash based storage system are disclosed. In an example, a memory device includes a NAND memory array and a memory controller to schedule and initiate read scans among multiple locations of the memory array, with such read scans being preemptively triggered during an idle (background) state of the memory device, thus reducing host latency during read and write operations in an active (foreground) state of the memory device. In an example, the optimization technique includes scheduling a read scan operation, monitoring an active or idle state of host IO operations, and preemptively initiating the read scan operation when entering an idle state, before the read scan operation is scheduled to occur. In further examples, the read scan may preemptively occur based on time-based scheduling, frequency-based conditions, or event-driven conditions triggering the read scan.
    Type: Grant
    Filed: September 30, 2017
    Date of Patent: May 7, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Ashutosh Malshe, Harish Singidi, Kishore Kumar Muchherla, Michael G. Miller, Sampath Ratnam, John Zhang, Jie Zhou
  • Publication number: 20190130980
    Abstract: Disclosed in some examples, are methods, systems, and machine readable mediums which compensate for read-disturb effects by shifting the read voltages used to read the value in a NAND cell based upon a read counter. For example, the NAND memory device may have a read counter that corresponds to a group of NAND cells (e.g., a page, a block, a superblock). Anytime a NAND cell in the group is read, the read counter may be incremented. The read voltage, Vread, may be adjusted based on the read counter to account for the read disturb voltage.
    Type: Application
    Filed: October 31, 2017
    Publication date: May 2, 2019
    Inventors: Harish Singidi, Kishore Kumar Muchherla, Gianni Stephen Alsasua, Ashutosh Malshe, Sampath Ratnam, Gary F. Besinga, Michael G. Miler
  • Publication number: 20190130983
    Abstract: NAND memory devices, are described that utilize higher read-margin cell types to provide a more granular read disturb indicator without utilizing dummy cells. For example, a NAND architecture may have some cells that are configured as SLC or MLC cells. SLC or MLC cells have more read disturb margin—that is these cells can withstand more read disturb current leakage into the cell before a bit error occurs than TLC or QLC cells. These higher margin cells may serve as the read disturb indicator for a group of cells that have a comparatively lower read disturb margin. Since there are more pages of these higher margin cells than there are pages of dummy cells, these indicators may serve a smaller group of pages than the dummy pages. This reduces the time needed to complete a read disturb scan as fewer pages need to be scanned.
    Type: Application
    Filed: October 31, 2017
    Publication date: May 2, 2019
    Inventors: Harish Singidi, Scott Stoller, Jung Sheng Hoei, Ashutosh Malshe, Gianni Stephen Alsasua, Kishore Kumar Muchherla
  • Publication number: 20190130981
    Abstract: Devices and techniques for detecting power loss in NAND memory devices are disclosed herein. A memory controller may calibrate a first read level for a first physical page of a number of physical pages from an initial first read level position to a calibrated first read level position. The first read level may be between a first threshold voltage distribution corresponding to a first logical state of the at least four logical states and a second threshold voltage distribution corresponding to a second logical state of the at least four logical states. Also, the first threshold voltage distribution may be a highest threshold voltage distribution for the first physical page. The memory controller may calibrate a second read level for the first physical page that is lower than the first read level from an initial second read level position to a calibrated first read level position.
    Type: Application
    Filed: September 12, 2018
    Publication date: May 2, 2019
    Inventors: Michael G. Miller, Kishore Kumar Muchherla, Harish Reddy Singidi, Ting Luo, Ashutosh Malshe, Preston Thomson, Jianmin Huang
  • Publication number: 20190122705
    Abstract: A variety of applications can include apparatus and/or methods of operating the apparatus that include a memory device having read levels that can be calibrated. A calibration controller implemented with the memory device can trigger a read level calibration based on inputs from one or more trackers monitoring parameters associated with the memory device and a determination of an occurrence of at least one event from a set of events related to the monitored parameters. The monitored parameters can include parameters related to a selected time interval and measurements of read, erase, or write operations of the memory device. Additional apparatus, systems, and methods are disclosed.
    Type: Application
    Filed: December 21, 2018
    Publication date: April 25, 2019
    Inventors: Kishore Kumar Muchherla, Ashutosh Malshe, Harish Reddy Singidi, Gianni Stephen Alsasua, Gary F. Besinga, Sampath Ratnam, Peter Sean Feeley
  • Publication number: 20190103164
    Abstract: Devices and techniques for initiating and controlling preemptive idle time read scans in a flash based storage system are disclosed. In an example, a memory device includes a NAND memory array and a memory controller to schedule and initiate read scans among multiple locations of the memory array, with such read scans being preemptively triggered during an idle (background) state of the memory device, thus reducing host latency during read and write operations in an active (foreground) state of the memory device. In an example, the optimization technique includes scheduling a read scan operation, monitoring an active or idle state of host IO operations, and preemptively initiating the read scan operation when entering an idle state, before the read scan operation is scheduled to occur. In further examples, the read scan may preemptively occur based on time-based scheduling, frequency-based conditions, or event-driven conditions triggering the read scan.
    Type: Application
    Filed: September 30, 2017
    Publication date: April 4, 2019
    Inventors: Ashutosh Malshe, Harish Singidi, Kishore Kumar Muchherla, Michael G. Miller, Sampath Ratnam, John Zhang, Jie Zhou
  • Publication number: 20190073251
    Abstract: Apparatus having an array of memory cells include a controller configured to read a particular memory cell of a last written page of memory cells of a block of memory cells of the array of memory cells, determine whether a threshold voltage of the particular memory cell is less than a particular voltage level, and mark the last written page of memory cells as affected by power loss during a programming operation of the last written page of memory cells when the threshold voltage of the particular memory cell is determined to be higher than the particular voltage level.
    Type: Application
    Filed: November 2, 2018
    Publication date: March 7, 2019
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Michael G. Miller, Ashutosh Malshe, Violante Moschiano, Peter Feeley, Gary F. Besinga, Sampath K. Ratnam, Walter Di-Francesco, Renato C. Padilla, JR., Yun Li, Kishore Kumar Muchherla
  • Patent number: 10223259
    Abstract: A memory system includes: a memory array including a plurality of memory cells, the plurality of memory cells including a plurality of cache memory cells; and a controller coupled to the memory array, the controller configured to: track usage of a first subset of the plurality of cache memory cells operating in a single-level cell (SLC) mode, wherein the tracking includes monitoring for an idle time event; and designate a storage mode for a second subset of the plurality of cache memory cells based on the tracked usage of the first subset, wherein the storage mode determines a storage density to be used for data writes.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: March 5, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Yun Li, Kishore Kumar Muchherla, Peter Feeley, Ashutosh Malshe, Daniel J. Hubbard, Christopher S. Hale, Kevin R. Brandt, Sampath K. Ratnam
  • Publication number: 20190065365
    Abstract: A memory system includes: a memory array including a plurality of memory cells, the plurality of memory cells including a plurality of cache memory cells; and a controller coupled to the memory array, the controller configured to: track usage of a first subset of the plurality of cache memory cells operating in a single-level cell (SLC) mode, wherein the tracking includes monitoring for an idle time event; and designate a storage mode for a second subset of the plurality of cache memory cells based on the tracked usage of the first subset, wherein the storage mode determines a storage density to be used for data writes.
    Type: Application
    Filed: August 31, 2017
    Publication date: February 28, 2019
    Inventors: Yun Li, Kishore Kumar Muchherla, Peter Feeley, Ashutosh Malshe, Daniel J. Hubbard, Christopher S. Hale, Kevin R. Brandt, Sampath K. Ratnam
  • Publication number: 20190065367
    Abstract: A memory system includes: a memory array including a plurality of memory cells, the plurality of memory cells including a plurality of cache memory cells; and a controller coupled to the memory array, the controller configured to: track usage of a first subset of the plurality of cache memory cells operating in a single-level cell (SLC) mode, wherein the tracking includes monitoring for an idle time event; and designate a storage mode for a second subset of the plurality of cache memory cells based on the tracked usage of the first subset, wherein the storage mode determines a storage density to be used for data writes.
    Type: Application
    Filed: October 22, 2018
    Publication date: February 28, 2019
    Inventors: Yun Li, Kishore Kumar Muchherla, Peter Feeley, Ashutosh Malshe, Daniel J. Hubbard, Christopher S. Hale, Kevin R. Brandt, Sampath K. Ratnam
  • Publication number: 20190066802
    Abstract: Devices and techniques for read voltage calibration of a flash-based storage system based on host IO operations are disclosed. In an example, a memory device includes a NAND memory array having groups of multiple blocks of memory cells, and a memory controller to optimize voltage calibration for reads of the memory array. In an example, the optimization technique includes monitoring read operations occurring to a respective block, identifying a condition to trigger a read level calibration based on the read operations, and performing the read level calibration for the respective block or a memory component that includes the respective block. In a further example, the calibration is performed based on a threshold voltage to read the respective block, which may be considered when the threshold voltage to read the respective block is evaluated within a sampling operation performed by the read level calibration.
    Type: Application
    Filed: August 29, 2017
    Publication date: February 28, 2019
    Inventors: Ashutosh Malshe, Kishore Kumar Muchhert, Harish Singidi, Peter Sean Feeley, Sampath Ratnam, kulachet Tanpairoj, Ting Luo
  • Publication number: 20190066739
    Abstract: A variety of applications can include apparatus and/or methods of operating the apparatus that include a memory device having read levels that can be calibrated. A calibration controller implemented with the memory device can trigger a read level calibration based on inputs from one or more trackers monitoring parameters associated with the memory device and a determination of an occurrence of at least one event from a set of events related to the monitored parameters. The monitored parameters can include parameters related to a selected time interval and measurements of read, erase, or write operations of the memory device. Additional apparatus, systems, and methods are disclosed.
    Type: Application
    Filed: August 31, 2017
    Publication date: February 28, 2019
    Inventors: Kishore Kumar Muchherla, Ashutosh Malshe, Harish Singidi, Gianni Stephen Alsasua, Gary F. Besinga, Sampath Ratnam, Peter Sean Feeley
  • Publication number: 20190065366
    Abstract: A memory system includes a memory array having a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: select a garbage collection (GC) source block storing valid data, calculate a valid data measure for the GC source block for representing an amount of the valid data within the GC source block, and designate a storage mode for an available memory block based on the valid data measure, wherein the storage mode is for controlling a number of bits stored per each of the memory cells for subsequent or upcoming data writes.
    Type: Application
    Filed: August 31, 2017
    Publication date: February 28, 2019
    Inventors: Kishore Kumar Muchherla, Peter Feeley, Ashutosh Malshe, Daniel J. Hubbard, Christopher S. Hale, Kevin R. Brandt, Sampath K. Ratnam, Yun Li, Marc S. Hamilton
  • Publication number: 20190065080
    Abstract: Disclosed in some examples are memory devices which feature customizable Single Level Cell (SLC) and Multiple Level Cell (MLC) configurations. The SLC memory cells serve as a high-speed cache providing SLC level performance with the storage capacity of a memory device with MLC memory cells. The proportion of cells configured as MLC vs the proportion that are configured as SLC storage may be configurable, and in some examples, the proportion may change during usage based upon configurable rules based upon memory device metrics. In some examples, when the device activity is below an activity threshold, the memory device may skip the SLC cache and place the data directly into the MLC storage to reduce power consumption.
    Type: Application
    Filed: August 30, 2017
    Publication date: February 28, 2019
    Inventors: Kulachet Tanpairoj, Sebastien Andre Jean, Kishore Kumar Muchherla, Ashutosh Malshe, Jianmin Huang
  • Publication number: 20180374549
    Abstract: A memory device comprising a main memory and a controller operably connected to the main memory is provided. The main memory can comprise a plurality of memory addresses, each corresponding to a single one of a plurality of word lines. Each memory address can be included in a tracked subset of the plurality of memory addresses. Each tracked subset can include memory addresses corresponding to more than one of the plurality of word lines. The controller is configured to track a number of read operations for each tracked subset, and to scan, in response to the number of read operations for a first tracked subset exceeding a first threshold value, a portion of data corresponding to each word line of the first tracked subset to determine an error count corresponding to each word line of the first tracked subset.
    Type: Application
    Filed: June 26, 2017
    Publication date: December 27, 2018
    Inventors: Renato C. Padilla, Jung Sheng Hoei, Michael G. Miller, Roland J. Awusie, Sampath K. Ratnam, Kishore Kumar Muchherla, Gary F. Besinga, Ashutosh Malshe, Harish R. Singidi
  • Patent number: 10121551
    Abstract: Devices and techniques for detecting power loss in NAND memory devices are disclosed herein. A memory controller may calibrate a first read level for a first physical page of a number of physical pages from an initial first read level position to a calibrated first read level position. The first read level may be between a first threshold voltage distribution corresponding to a first logical state of the at least four logical states and a second threshold voltage distribution corresponding to a second logical state of the at least four logical states. Also, the first threshold voltage distribution may be a highest threshold voltage distribution for the first physical page. The memory controller may calibrate a second read level for the first physical page that is lower than the first read level from an initial second read level position to a calibrated first read level position.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: November 6, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Michael G. Miller, Kishore Kumar Muchherla, Harish Singidi, Ting Luo, Ashutosh Malshe, Preston Thomson, Jianmin Huang