Patents by Inventor Atsuki FUJITA
Atsuki FUJITA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11842968Abstract: A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.Type: GrantFiled: April 29, 2022Date of Patent: December 12, 2023Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Kohei Yabuta, Takayuki Yamada, Yuya Muramatsu, Noriyuki Besshi, Yutaro Sugi, Hiroaki Haruna, Masaru Fuku, Atsuki Fujita
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Patent number: 11837516Abstract: In a semiconductor device, on a heat dissipation portion of a lead frame opposite to a mounting portion on which a semiconductor element is mounted, a thin molding portion having a thickness of about 0.02 mm to 0.3 mm is formed by a second molding resin which is a high-heat-dissipation resin. A scale-like portion on which scale-shaped projections are consecutively formed is provided over both sides across a resin boundary portion of the heat dissipation portion. The scale-like portion reaches abutting surfaces of an upper die and a lower die of a mold used in a molding process. Thus, the same void inhibition effect as with an air vent is obtained.Type: GrantFiled: September 6, 2018Date of Patent: December 5, 2023Assignee: Mitsubishi Electric CorporationInventors: Takanobu Kajihara, Katsuhiko Omae, Takashi Nagao, Atsuki Fujita, Ryosuke Takeshita, Masakazu Hamada
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Publication number: 20220254738Abstract: A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.Type: ApplicationFiled: April 29, 2022Publication date: August 11, 2022Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Kohei YABUTA, Takayuki YAMADA, Yuya MURAMATSU, Noriyuki BESSHI, Yutaro SUGI, Hiroaki HARUNA, Masaru FUKU, Atsuki FUJITA
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Patent number: 11342281Abstract: A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.Type: GrantFiled: October 25, 2018Date of Patent: May 24, 2022Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Kohei Yabuta, Takayuki Yamada, Yuya Muramatsu, Noriyuki Besshi, Yutaro Sugi, Hiroaki Haruna, Masaru Fuku, Atsuki Fujita
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Patent number: 11302597Abstract: A semiconductor device is provided with a heat dissipating face side skirt portion, which is a frame-form projection, on a heat dissipating face of a lead frame. Because of this, creepage distance increases with a small increase in an amount of resin, and insulating properties improve. Also, the heat dissipating face side skirt portion is molded via two transfer molding steps, wettability of the second molding resin with respect to a first molding resin and the lead frame increases, and adhesion improves. Furthermore, an end face of an inner lead is exposed in an element sealing portion on a mounting face side, and covered with a second thin molded portion molded using the second molding resin, whereby heat generated in a semiconductor element can efficiently be caused to escape from faces of both a first thin molded portion and the second thin molded portion, because of which heat dissipation improves.Type: GrantFiled: September 21, 2017Date of Patent: April 12, 2022Assignee: Mitsubishi Electric CorporationInventors: Takanobu Kajihara, Katsuhiko Omae, Takashi Nagao, Masayuki Funakoshi, Norio Emi, Atsuki Fujita, Yuki Okabe
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Publication number: 20210305111Abstract: In a semiconductor device, on a heat dissipation portion of a lead frame opposite to a mounting portion on which a semiconductor element is mounted, a thin molding portion having a thickness of about 0.02 mm to 0.3 mm is formed by a second molding resin which is a high-heat-dissipation resin. A scale-like portion on which scale-shaped projections are consecutively formed is provided over both sides across a resin boundary portion of the heat dissipation portion. The scale-like portion reaches abutting surfaces of an upper die and a lower die of a mold used in a molding process. Thus, the same void inhibition effect as with an air vent is obtained.Type: ApplicationFiled: September 6, 2018Publication date: September 30, 2021Applicant: Mitsubishi Electric CorporationInventors: Takanobu KAJIHARA, Katsuhiko OMAE, Takashi NAGAO, Atsuki FUJITA, Ryosuke TAKESHITA, Masakazu HAMADA
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Patent number: 11025140Abstract: In a rotary electric machine in which a controller and a heat sink are arranged in an extending direction of an output shaft of a motor, in order to provide a rotary electric machine which secures a heat rejection performance and an insulation performance of a semiconductor device to be mounted to the controller and is downsized as a whole, the controller includes a semiconductor device having a drive circuit provided so as to correspond to a stator winding of the motor, and the semiconductor device has a main face held in close contact with the heat sink. On a close contact face between the semiconductor device and the heat sink, a drive circuit is formed so as to extend along an outer edge portion of the heat sink to increase a cooling area.Type: GrantFiled: November 22, 2016Date of Patent: June 1, 2021Assignee: Mitsubishi Electric CorporationInventors: Takanobu Kajihara, Katsuhiko Omae, Shunsuke Fushie, Tokiyoshi Tanigawa, Hiroyuki Miyanishi, Atsuki Fujita, Tomohiro Inoue, Yuki Okabe, Junya Suzuki
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Publication number: 20210125891Abstract: A semiconductor device is provided with a heat dissipating face side skirt portion, which is a frame-form projection, on a heat dissipating face of a lead frame. Because of this, creepage distance increases with a small increase in an amount of resin, and insulating properties improve. Also, the heat dissipating face side skirt portion is molded via two transfer molding steps, wettability of the second molding resin with respect to a first molding resin and the lead frame increases, and adhesion improves. Furthermore, an end face of an inner lead is exposed in an element sealing portion on a mounting face side, and covered with a second thin molded portion molded using the second molding resin, whereby heat generated in a semiconductor element can efficiently be caused to escape from faces of both a first thin molded portion and the second thin molded portion, because of which heat dissipation improves.Type: ApplicationFiled: September 21, 2017Publication date: April 29, 2021Applicant: Mitsubishi Electric CorporationInventors: Takanobu KAJIHARA, Katsuhiko OMAE, Takashi NAGAO, Masayuki FUNAKOSHI, Norio EMI, Atsuki FUJITA, Yuki OKABE
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Publication number: 20200251423Abstract: A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.Type: ApplicationFiled: October 25, 2018Publication date: August 6, 2020Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Kohei YABUTA, Takayuki YAMADA, Yuya MURAMATSU, Noriyuki BESSHI, Yutaro SUGI, Hiroaki HARUNA, Masaru FUKU, Atsuki FUJITA
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Publication number: 20190372432Abstract: In a rotary electric machine in which a controller and a heat sink are arranged in an extending direction of an output shaft of a motor, in order to provide a rotary electric machine which secures a heat rejection performance and an insulation performance of a semiconductor device to be mounted to the controller and is downsized as a whole, the controller includes a semiconductor device having a drive circuit provided so as to correspond to a stator winding of the motor, and the semiconductor device has a main face held in close contact with the heat sink. On a close contact face between the semiconductor device and the heat sink, a drive circuit is formed so as to extend along an outer edge portion of the heat sink to increase a cooling area.Type: ApplicationFiled: November 22, 2016Publication date: December 5, 2019Applicant: Mitsubishi Electric CorporationInventors: Takanobu KAJIHARA, Katsuhiko OMAE, Shunsuke FUSHIE, Tokiyoshi TANIGAWA, Hiroyuki MIYANISHI, Atsuki FUJITA, Tomohiro INOUE, Yuki OKABE, Junya SUZUKI