Abstract: Certain embodiments provide a method for manufacturing a semiconductor device including forming a first interconnection layer having a first conductive layer and a first insulating layer which are exposed from a surface of the first interconnection layer, forming a second interconnection layer having a second conductive layer and a second insulating layer which are exposed from a surface of the second interconnection layer, forming a first non-bonded surface on the surface of the first insulating layer by making a partial area of the surface of the first insulating layer lower than the surface of the first conductive layer, the partial area containing surroundings of the first conductive layer, and connecting the surface of the first conductive layer and the surface of the second conductive layer and bonding the surface of the first insulating layer excluding the first non-bonded surface and the surface of the second insulating layer.

Abstract: Certain embodiments provide a method for manufacturing a semiconductor device including forming a first interconnection layer having a first conductive layer and a first insulating layer which are exposed from a surface of the first interconnection layer, forming a second interconnection layer having a second conductive layer and a second insulating layer which are exposed from a surface of the second interconnection layer, forming a first non-bonded surface on the surface of the first insulating layer by making a partial area of the surface of the first insulating layer lower than the surface of the first conductive layer, the partial area containing surroundings of the first conductive layer, and connecting the surface of the first conductive layer and the surface of the second conductive layer and bonding the surface of the first insulating layer excluding the first non-bonded surface and the surface of the second insulating layer.

Abstract: Disclosed is a method for production of recombinant human alpha-galactosidase A (rh alpha-Gal A) in a large scale, with a high purity. The method comprises the steps of (a) culturing rh alpha-Gal A-producing mammalian cells in a serum-free medium, (b) collecting culture supernatant, (c) subjecting the culture supernatant to anion-exchange column chromatography, (d) to hydrophobic column chromatography, (e) to a column chromatography employing as solid phase a material having affinity for phosphate group, (f) to cation-exchange column chromatography, (g) to dye-affinity column chromatography, and (h) to gel filtration column chromatography, in the order.

Abstract: Disclosed is a method for production of recombinant human alpha-galactosidase A (rh alpha-Gal A) in a large scale, with a high purity. The method comprises the steps of (a) culturing rh alpha-Gal A-producing mammalian cells in a serum-free medium, (b) collecting culture supernatant, (c) subjecting the culture supernatant to anion-exchange column chromatography, (d) to hydrophobic column chromatography, (e) to a column chromatography employing as solid phase a material having affinity for phosphate group, (f) to cation-exchange column chromatography, (g) to dye-affinity column chromatography, and (h) to gel filtration column chromatography, in the order.

Abstract: According to embodiments, a semiconductor device is provided. The semiconductor device includes an insulation layer, an electrode, and a groove. The insulation layer is provided on a surface of a substrate. The electrode is buried in the insulation layer, and a first end surface of the electrode is exposed from the insulation layer. The groove is formed around the electrode on the surface of the substrate. The groove has an outside surface of the electrode as one side surface, and the groove is opened on the surface side of the insulation layer. The first end surface of the electrode buried in the insulation layer protrudes from the surface of the insulation layer.

Abstract: According to one embodiment, a semiconductor device is provided with a first single crystal layer, a polycrystalline layer provided on an entire surface of the first single crystal layer, and a second single crystal layer bonded to the polycrystalline layer. The coefficient of thermal expansion of the polycrystalline layer is greater than the coefficient of thermal expansion of the second single crystal layer, and is smaller than the coefficient of thermal expansion of a compound semiconductor layer which can be provided on the second single crystal layer using an intervening a buffer layer.

Abstract: Disclosed is a method for production of recombinant human alpha-galactosidase A (rh alpha-Gal A) in a large scale, with a high purity. The method comprises the steps of (a) culturing rh alpha-Gal A-producing mammalian cells in a serum-free medium, (b) collecting culture supernatant, (c) subjecting the culture supernatant to anion-exchange column chromatography, (d) to hydrophobic column chromatography, (e) to a column chromatography employing as solid phase a material having affinity for phosphate group, (f) to cation-exchange column chromatography, and (g) to gel filtration column chromatography, in the order.

Abstract: Certain embodiments provide a method for manufacturing a semiconductor device including forming a first interconnection layer having a first conductive layer and a first insulating layer which are exposed from a surface of the first interconnection layer, forming a second interconnection layer having a second conductive layer and a second insulating layer which are exposed from a surface of the second interconnection layer, forming a first non-bonded surface on the surface of the first insulating layer by making a partial area of the surface of the first insulating layer lower than the surface of the first conductive layer, the partial area containing surroundings of the first conductive layer, and connecting the surface of the first conductive layer and the surface of the second conductive layer and bonding the surface of the first insulating layer excluding the first non-bonded surface and the surface of the second insulating layer.

Abstract: Certain embodiments provide a method for manufacturing a semiconductor device including forming a first interconnection layer having a first conductive layer and a first insulating layer which are exposed from a surface of the first interconnection layer, forming a second interconnection layer having a second conductive layer and a second insulating layer which are exposed from a surface of the second interconnection layer, forming a first non-bonded surface on the surface of the first insulating layer by making a partial area of the surface of the first insulating layer lower than the surface of the first conductive layer, the partial area containing surroundings of the first conductive layer, and connecting the surface of the first conductive layer and the surface of the second conductive layer and bonding the surface of the first insulating layer excluding the first non-bonded surface and the surface of the second insulating layer.

Abstract: Certain embodiments provide a solid-state imaging device including a sensor substrate including a microlens, a transparent resin layer provided so as to be in contact with a main surface of the sensor substrate including a surface of the microlens, and a transparent substrate disposed on a top surface of the transparent resin layer. A thermal conductivity of the transparent resin layer is higher than that of air, and a refractive index of the transparent resin layer is lower than that of the microlens and is equal to or lower than that of the transparent substrate.

Abstract: Disclosed is a method for production of recombinant human iduronate 2-sulfatase (rhI2S) (the 26th to 550th amino acids of SEQ ID NO: 10) in a large scale, with a high purity, and mannose 6-phosphate residues. The method comprises the steps of (a) culturing rhI2S (the 26th to 550th amino acids of SEQ ID NO: 10)-producing mammalian cells in a serum-free medium, (b) collecting culture supernatant, (c) subjecting the culture supernatant to cation-exchange column chromatography, (d) to dye affinity column chromatography, (e) to anion-exchange column chromatography, and (f) to a column chromatography employing as solid phase a material having affinity for phosphate group, and (g) to gel filtration column chromatography, in the order.

Abstract: According to embodiments, a semiconductor device is provided. The semiconductor device includes an insulation layer, an electrode, and a groove. The insulation layer is provided on a surface of a substrate. The electrode is buried in the insulation layer, and a first end surface of the electrode is exposed from the insulation layer. The groove is formed around the electrode on the surface of the substrate. The groove has an outside surface of the electrode as one side surface, and the groove is opened on the surface side of the insulation layer. The first end surface of the electrode buried in the insulation layer protrudes from the surface of the insulation layer.

Abstract: Disclosed is a method for production of recombinant human alpha-galactosidase A (rh alpha-Gal A) in a large scale, with a high purity. The method comprises the steps of (a) culturing rh alpha-Gal A-producing mammalian cells in a serum-free medium, (b) collecting culture supernatant, (c) subjecting the culture supernatant to anion-exchange column chromatography, (d) to hydrophobic column chromatography, (e) to a column chromatography employing as solid phase a material having affinity for phosphate group, (f) to cation-exchange column chromatography, and (g) to gel filtration column chromatography, in the order.

Abstract: Certain embodiments provide a method for manufacturing a semiconductor device including forming a first interconnection layer having a first conductive layer and a first insulating layer which are exposed from a surface of the first interconnection layer, forming a second interconnection layer having a second conductive layer and a second insulating layer which are exposed from a surface of the second interconnection layer, forming a first non-bonded surface on the surface of the first insulating layer by making a partial area of the surface of the first insulating layer lower than the surface of the first conductive layer, the partial area containing surroundings of the first conductive layer, and connecting the surface of the first conductive layer and the surface of the second conductive layer and bonding the surface of the first insulating layer excluding the first non-bonded surface and the surface of the second insulating layer.

Abstract: According to one embodiment, a solid-state image sensing device includes a semiconductor substrate on which a plurality of pixels are arranged, a transparent substrate including a first through via provided in an opening formed in advance to extend through, an adhesive including a second through via connected to the first through via and configured to bond the semiconductor substrate and the transparent substrate while exposing the pixels, and an imaging lens unit arranged on the transparent substrate.

Abstract: Disclosed is a method for production of recombinant human iduronate 2-sulfatase (rhI2S) in a large scale, with a high purity, and mannose 6-phosphate residues. The method comprises the steps of (a) culturing rhI2S-producing mammalian cells in a serum-free medium, (b) collecting culture supernatant, (c) subjecting the culture supernatant to cation-exchange column chromatography, (d) to dye affinity column chromatography, (e) to anion-exchange column chromatography, and (f) to a column chromatography employing as solid phase a material having affinity for phosphate group, and (g) to gel filtration column chromatography, in the order.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

Abstract: According to one embodiment, a camera module includes an image sensor, a main lens system and a sublens group. The sublens group is provided in an optical path between the main lens system and the image sensor. The sublens group forms an image piece for every pixel block. The image piece corresponds to a part of a subject image. The sublens group is integrated with a support structure. The support structure serves to support the sublens group above the image sensor.

Abstract: A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.

Abstract: According to one embodiment, a solid-state image sensing device includes a semiconductor substrate on which a plurality of pixels are arranged, a transparent substrate including a first through via provided in an opening formed in advance to extend through, an adhesive including a second through via connected to the first through via and configured to bond the semiconductor substrate and the transparent substrate while exposing the pixels, and an imaging lens unit arranged on the transparent substrate.