Abstract: There is provided a technique that includes: (a) arranging a plurality of first substrates and a second substrate having a smaller surface area than the first substrates and accommodating the plurality of first substrates and the second substrate in a process chamber; and (b) forming a thin film on each of the plurality of first substrates by supplying a processing gas to a substrate arrangement region in which the plurality of first substrates and the second substrate are arranged, wherein (b) includes: (c) supplying a dilution gas to a first supply region of the substrate arrangement region, or not performing a supply of the dilution gas to the first supply region, and supplying the dilution gas to at least one second supply region of the substrate arrangement region at a flow rate larger than a flow rate of the dilution gas supplied to the first supply region.

Abstract: A substrate processing apparatus includes a process chamber accommodating a substrate; a gas supply system; and an exhaust system. The supply system includes a vaporizer and a mist filter, the mist filter including a plurality of first plates and a plurality of second plates. Each of the first plates includes a first plate portion having a plurality of first grooves on a surface thereof and a first flow path. Each of the second plates includes a second plate portion having a plurality of second grooves on a surface thereof and a second flow path. When the plurality of first and second plates are arranged alternatively, the plurality of first grooves are configured to face the second flow path and the plurality of second grooves are configured to face the first flow path, such that the first flow path and the second flow path are not in-line.

Abstract: This non-pneumatic tire is provided with a tread ring, a wheel which is arranged radially inside of the tread ring, and spokes which are interposed between the tread ring and the wheel. Further, the wheel has a disc part to which the vehicle shaft is linked, and a rim part which is connected on the inner peripheral side to the disc part and is joined on the outer peripheral side to the spokes. In this configuration, the average thickness (T1) of the disc part is set to be greater than the average thickness (T2) of the rim part. In other words, the relation T1>T2 holds.

Abstract: This non-pneumatic tire is provided with a tread ring, a wheel which is arranged radially inside of the tread ring, and spokes which are interposed between the tread ring and the wheel. Further, the wheel has a disc part to which the vehicle shaft is linked, and a rim part which is connected on the inner peripheral side to the disc part and is joined on the outer peripheral side to the spokes. In this configuration, the average thickness (T1) of the disc part is set to be less than the average thickness (T2) of the rim part. In other words, the relation T1<T2 holds.

Abstract: Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.

Abstract: A technique capable of adjusting a thickness balance of a film between substrates stacked in a process chamber of a substrate processing apparatus, includes a method of manufacturing a semiconductor device, including: (a) supplying source gas to substrates through a first nozzle vertically disposed along a stacking direction of the substrates in a process chamber where the substrates are stacked and accommodated; and (b) supplying reactive gas to the substrates through a second nozzle provided with opening portions and vertically disposed along the stacking direction of the substrates in the process chamber while adjusting a partial pressure balance of the reactive gas in the stacking direction of the substrates to a desired state along the stacking direction of the substrates, wherein an opening area of each of the opening portions increases along a direction from an upstream side to a downstream side of the second nozzle.

Abstract: To reduce a temperature deviation on a surface of a substrate and shorten a temperature recovery time on the surface of the substrate, a substrate processing apparatus is provided. The substrate processing apparatus includes a substrate retainer configured to accommodate a plurality of substrates and heat insulating plates; a reaction tube within the substrate retainer; and a heating mechanism configured to heat the plurality of substrates, wherein the substrate retainer includes a substrate processing region where the plurality of substrates are accommodated and a heat insulating plate region where the heat insulating plates are accommodated. A reflectivity of each of the first heat insulating plates is accommodated in an upper layer portion of the heat insulating plate region and is higher than a reflectivity of each of the second heat insulating plates accommodated in a region other than the upper layer portion of the heat insulating plate region.

Abstract: A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.

Abstract: A substrate processing apparatus includes a process chamber accommodating a substrate; a gas supply system; and an exhaust system. The supply system includes a vaporizer and a mist filter, the mist filter including a plurality of first plates and a plurality of second plates. Each of the first plates includes a first plate portion having a plurality of first grooves on a surface thereof and a first flow path. Each of the second plates includes a second plate portion having a plurality of second grooves on a surface thereof and a second flow path. When the plurality of first and second plates are arranged alternatively, the plurality of first grooves are configured to face the second flow path and the plurality of second grooves are configured to face the first flow path, such that the first flow path and the second flow path are not in-line.

Abstract: There is provided a technique that includes: a process chamber in which a process of forming a film containing a main element on a substrate is performed; a first nozzle configured to supply a precursor containing the main element to the substrate in the process chart; a second nozzle separated from the first nozzle and configured to supply the precursor to the substrate in the process chamber; a third nozzle configured to supply a reactant to the substrate in the process chamber; and a plurality of first exhaust ports configured to exhaust an internal atmosphere of the process chamber, wherein each of the plurality of first exhaust ports is disposed at a position which does not face a first gas ejection hole of the first nozzle and a second gas ejection hole of the second nozzle, in a plan view.

Abstract: A substrate processing apparatus includes a reaction tube defining a substrate processing chamber; a gas inlet provided at a lower portion of the reaction tube to supply a process gas; a first buffer unit for temporarily retaining the process gas, the first buffer unit at a first side of an inner surface of the reaction tube and includes a plurality of gas supply holes; and a gas outlet provided at a second side of the inner surface of the reaction tube opposite to the first side, to exhaust the process gas from the process chamber. The gas supply holes are provided from an upper end portion of the first buffer unit to a lower end portion of the first buffer unit, and the process gas is supplied through the plurality of gas supply holes into the process chamber, passes through the process chamber, and exhausted through the gas outlet.

Abstract: A film is efficiently formed by sufficiently supplying a source gas to substrates accommodated in a process chamber, and the uniformity of a film formed on the substrates is improved. A method of a semiconductor device manufacturing includes (a) supplying a source gas to an upper region of a process chamber through a first gas supply hole disposed at a front end of a first nozzle disposed in a lower region of the process chamber where the source gas is not pyrolyzed; (b) supplying the source gas to substrates disposed in the lower region and a middle region of the process chamber through a plurality of second gas supply holes of a second nozzle; and (c) supplying a reactive gas to substrates disposed in the lower region, the middle region and the upper region of the process chamber through a plurality of third gas supply holes of a third nozzle.

Abstract: A film is efficiently formed by sufficiently supplying a source gas to substrates accommodated in a process chamber, and the uniformity of a film formed on the substrates is improved. A method of a semiconductor device manufacturing includes (a) supplying a source gas to an upper region of a process chamber through a first gas supply hole disposed at a front end of a first nozzle disposed in a lower region of the process chamber where the source gas is not pyrolyzed; (b) supplying the source gas to substrates disposed in the lower region and a middle region of the process chamber through a plurality of second gas supply holes of a second nozzle; and (c) supplying a reactive gas to substrates disposed in the lower region, the middle region and the upper region of the process chamber through a plurality of third gas supply holes of a third nozzle.

Abstract: There is provided an image processing apparatus. An image sequence acquisition section acquires an image sequence including a plurality of images. A sorting information acquisition section analyzes the individual images included in the image sequence, and acquires sorting information corresponding to the images on the basis of an analysis result. An image sequence generation section generates, based on the sorting information, one or a plurality of pieces of information indicating an image sequence which includes at least part of the plurality of images.

Abstract: The present invention provides an image display medium comprising a pair of substrates at least one of which having translucency, the substrates being disposed opposite to each other with a gap, a dispersion medium which has translucency and is enclosed in a space between the pair of substrates; and plural kinds of particle groups which are movably dispersed in the dispersion medium, move according to an electric field formed, and have different colors and forces for separation from the substrates.

Abstract: There is provided an image processing apparatus. An image sequence acquisition section acquires an image sequence including a plurality of images. A sorting information acquisition section analyzes the individual images included in the image sequence, and acquires sorting information corresponding to the images on the basis of an analysis result. An image sequence generation section generates, based on the sorting information, one or a plurality of pieces of information indicating an image sequence which includes at least part of the plurality of images.

Abstract: A writing apparatus includes: a voltage application unit that applies a voltage to a display medium whose display changes according to an irradiation of light and an applied voltage; an optical output unit that irradiates light toward the display medium; and a controller that (i) receives a position signal that has been output from an apparatus upon contact with an input device, the position signal indicating a position of the contact with the input device, (ii) specifies, based on the received position signal, a position on the display medium at which a display is to be changed, and (iii) controls the optical output unit so that light is irradiated toward the specified position on the display medium for a predetermined time period.

Abstract: An image processing apparatus includes a composite image generator and a print controller. The composite image generator generates a composite image by superimposing, on a document image of a document represented by document data, two-dimensional code images individually corresponding to multiple document elements included in the document. The print controller causes a printer to print the composite image. The composite image generator determines positions of the two-dimensional code images corresponding to the document elements so that the positions do not overlap images of the document elements.

Abstract: An image processing apparatus includes a composite image generator and a print controller. The composite image generator generates a composite image by superimposing, on a document image of a document represented by document data, two-dimensional code images individually corresponding to multiple document elements included in the document. The print controller causes a printer to print the composite image. The composite image generator determines positions of the two-dimensional code images corresponding to the document elements so that the positions do not overlap images of the document elements.