Patents by Inventor Atsushi Moriya

Atsushi Moriya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200194465
    Abstract: The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.
    Type: Application
    Filed: February 26, 2020
    Publication date: June 18, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satohiro OKAMOTO, Yasuyuki ARAI, Ikuko KAWAMATA, Atsushi MIYAGUCHI, Yoshitaka MORIYA
  • Publication number: 20200185237
    Abstract: There is provided a technique that includes: etching a portion of a first film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: supplying an etching gas into a process chamber while raising an internal pressure of the process chamber in a state in which the substrate having the first film formed on the surface of the substrate is accommodated in the process chamber; and lowering the internal pressure of the process chamber by exhausting an interior of the process chamber in a state in which supply of the etching gas into the process chamber is stopped.
    Type: Application
    Filed: February 13, 2020
    Publication date: June 11, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kensuke HAGA, Atsushi MORIYA, Naoharu NAKAISO, Takahiro MIYAKURA
  • Patent number: 10643839
    Abstract: A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: May 5, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Ayuta Suzuki, Kosuke Yamamoto, Kazuyoshi Matsuzaki, Munehito Kagaya, Tsuyoshi Moriya, Tadashi Mitsunari, Atsushi Kubo
  • Patent number: 10608028
    Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: March 31, 2020
    Assignee: SONY CORPORATION
    Inventors: Atsushi Yamamoto, Shinji Miyazawa, Yutaka Ooka, Kensaku Maeda, Yusuke Moriya, Naoki Ogawa, Nobutoshi Fujii, Shunsuke Furuse, Masaya Nagata, Yuichi Yamamoto
  • Patent number: 10580796
    Abstract: The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: March 3, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satohiro Okamoto, Yasuyuki Arai, Ikuko Kawamata, Atsushi Miyaguchi, Yoshitaka Moriya
  • Patent number: 10529560
    Abstract: There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: January 7, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Takahiro Miyakura, Atsushi Moriya, Naoharu Nakaiso, Kensuke Haga
  • Patent number: 10475837
    Abstract: An electronic device has a mounted image sensor including a light shielding body having light shielding walls and light transmitting portions each formed in an opening between the light shielding walls, a first light-shielding layer formed on a light incident surface side of the light shielding body and having an opening narrower than the opening of the light shielding body for each of the openings of the light shielding body, a microlens provided for each of the openings of the first light-shielding layer on the light incident surface side of the light shielding body, and a light receiving element layer with an array of a large number of light receiving elements. The present disclosure can be used for, for example, a compound-eye optical system.
    Type: Grant
    Filed: June 9, 2016
    Date of Patent: November 12, 2019
    Assignee: SONY CORPORATION
    Inventors: Yusuke Moriya, Kunihiko Hikichi, Hiroyuki Itou, Atsushi Yamamoto, Masahiko Shimizu
  • Publication number: 20190279877
    Abstract: There is provided a technique that includes partially etching a film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) setting a temperature of the substrate having the first film formed on the surface to a first temperature; (b) stabilizing an in-plane temperature of the substrate at the first temperature; and (c) lowering the temperature of the substrate having the in-plane temperature stabilized at the first temperature from the first temperature to a second temperature that is lower than the first temperature, wherein in (c), an etching gas is supplied to the substrate for a predetermined period.
    Type: Application
    Filed: March 11, 2019
    Publication date: September 12, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kotaro MURAKAMI, Naoharu NAKAISO, Tetsuya TAKAHASHI, Atsushi MORIYA
  • Publication number: 20190221566
    Abstract: An electronic circuit includes a noise source and an analog circuit and a logic circuit that may be adversely affected by noise. At least a portion of the analog circuit and the logic circuit is formed on a buried impurity layer whose conductivity is different from that of a substrate, and at least a portion of the periphery of that portion is surrounded by an impurity layer that is different from the substrate. Thus, propagation of the noise from the noise source is prevented.
    Type: Application
    Filed: March 22, 2019
    Publication date: July 18, 2019
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Isamu MORIYA, Atsushi YAMADA
  • Patent number: 10345861
    Abstract: An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion.
    Type: Grant
    Filed: June 7, 2018
    Date of Patent: July 9, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Yasuyuki Arai, Ikuko Kawamata, Atsushi Miyaguchi, Yoshitaka Moriya
  • Publication number: 20190189440
    Abstract: There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying a non-halogen-based second process gas to the substrate in the process chamber. Further, an internal pressure of the process chamber in the act of supplying the first process gas is set to be higher than an internal pressure of the process chamber in the act of supplying the second process gas.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 20, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yugo ORIHASHI, Atsushi MORIYA
  • Publication number: 20190163966
    Abstract: The present invention provides a technology that can reduce erroneous detection and detect a suspicious person from an image at high accuracy. A suspicious person detection device according to one example embodiment of the present invention includes: an eye direction detection unit that detects an eye direction of a subject; a face direction detection unit that detects a face direction of the subject; an environment information acquisition unit that acquires environment information indicating arrangement of an object around the subject; and a determination unit that, based on the face direction, the eye direction, and the environment information, determines whether or not the subject is showing suspicious behavior.
    Type: Application
    Filed: July 3, 2017
    Publication date: May 30, 2019
    Applicant: NEC CORPORATION
    Inventor: Atsushi MORIYA
  • Patent number: 10262872
    Abstract: There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: April 16, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Takahiro Miyakura, Atsushi Moriya, Naoharu Nakaiso, Kensuke Haga
  • Patent number: 10262857
    Abstract: There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying a non-halogen-based second process gas to the substrate in the process chamber. Further, an internal pressure of the process chamber in the act of supplying the first process gas is set to be higher than an internal pressure of the process chamber in the act of supplying the second process gas.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: April 16, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yugo Orihashi, Atsushi Moriya
  • Publication number: 20190080192
    Abstract: Provided is an information processing apparatus including a detection unit that detects a difference from a previously detected marker in a predetermined marker, by image recognition processing on an image obtained by image-capturing an arrangement place of an article; and an execution unit that executes a process in accordance with the difference.
    Type: Application
    Filed: January 4, 2017
    Publication date: March 14, 2019
    Applicant: NEC CORPORATION
    Inventor: Atsushi MORIYA
  • Patent number: 10163910
    Abstract: Described herein is a technique capable of suppressing the deviation in the characteristic of the semiconductor device. A method of manufacturing a semiconductor device may include: (a) receiving a data obtained by measuring a width of a first pillar between first grooves in a center region of a substrate and a width of a second pillar between second grooves in a peripheral region of the substrate; and (b) forming a width adjusting film on surfaces of the first grooves and the second grooves such that a sum of the width of the first pillar and a thickness of a first portion of the width adjusting film in the center region and a sum of the width of the second pillar and a thickness of a second portion of the width adjusting film in the peripheral region are within a predetermined range.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: December 25, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Satoshi Shimamoto, Atsushi Moriya
  • Patent number: 10134584
    Abstract: A method of manufacturing a semiconductor device includes forming a seed layer on a substrate by alternately performing supplying a halogen-based first process gas to the substrate and supplying a non-halogen-based second process gas to the substrate, and forming a film on the seed layer by supplying a third process gas to the substrate. A pressure of a space where the substrate exists in the act of supplying the first process gas is set higher than a pressure of the space where the substrate exists in the act of supplying the second process gas.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: November 20, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yugo Orihashi, Atsushi Moriya
  • Patent number: 10114936
    Abstract: An information processing device includes a first acquisition unit that acquires first biological data, a collation unit that refers to a collation data storage unit that stores a plurality of pieces of second biological data, and collates the first biological data with each piece of the second biological data, a second acquisition unit that acquires attribute information for each piece of the second biological data from an attribute information storage unit that stores attribute information associated with each piece of the second biological data, and a specification unit that compares the attribute information acquired together with the first biological data with the attribute information associated with each piece of the second biological data, and specifies at least one of the pieces of second biological data corresponding to the first biological data, on the basis of a result of the comparison and a result of the collation.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: October 30, 2018
    Assignees: NEC CORPORATION, NEC SOLUTION INNOVATORS, LTD.
    Inventors: Atsushi Moriya, Kazuhide Umeda
  • Patent number: 10090322
    Abstract: A method of manufacturing a semiconductor device, includes: loading a substrate including a laminated film including an insulating film and a sacrificial film, a channel hole formed in the laminated film, a charge trapping film formed on a surface in the channel hole, a first channel film formed on a surface of the charge trapping film, and a common source line exposed on the bottom of the channel hole; receiving information on a distribution of hole diameter of the channel hole; and forming a second channel film on a surface of the first channel film by supplying a first processing gas and a second processing gas to a center side and an outer peripheral side of the substrate, respectively, so as to correct the distribution of the hole diameter based on the information.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: October 2, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Satoshi Shimamoto, Toshiyuki Kikuchi, Atsushi Moriya, Masanori Nakayama, Takashi Nakagawa
  • Patent number: 10090152
    Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a seed layer doped with a dopant on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a halogen-based first process gas to the substrate, supplying a non-halogen-based second process gas to the substrate, and supplying a dopant gas to the substrate; and supplying a third process gas to the substrate to form a film on the seed layer.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: October 2, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yugo Orihashi, Atsushi Moriya