Abstract: The present disclosure relates to a photodetection device and an electronic apparatus that allow for reducing surface reflection from an on-chip microlens and suppressing deterioration of image quality. Provided is a photodetection device including: a plurality of pixels that have photoelectric conversion units; on-chip microlenses that are formed in such a way as to correspond to the individual pixels; and an antireflection film that is formed on a surface of the on-chip microlens, in which the antireflection film is constituted by a stacking of: a first inorganic film that is formed by a metal oxide film; and a second inorganic film that is formed on a surface of the first inorganic film and has a lower refractive index than the first inorganic film. The present disclosure can be applied to, for example, a CMOS solid-state imaging device.

Abstract: According to one aspect of the present disclosure, there is provided a substrate processing method including: forming a film containing a predetermined element on a substrate by performing a first cycle a first predetermined number of times, the first cycle including: forming a first layer containing the predetermined element by performing a second cycle a second predetermined number of times, wherein a surface of the first layer is halogen-terminated and wherein the second cycle includes: supplying a first gas containing the predetermined element and a halogen element to the substrate; and removing the first gas; and forming a second layer containing the predetermined element by supplying a second gas containing the predetermined element to the substrate.

Abstract: A technique includes at least one chamber including a process chamber that is capable of processing a substrate and a shower head arranged in an upstream of the process chamber; a gas supplier that is capable of supplying a gas into the process chamber via the shower head; a first exhaust pipe communicating with the shower head; a second exhaust pipe communicating with the process chamber; a first exhaust controller installed in the first exhaust pipe; a first heater installed in the first exhaust pipe; and a controller configured to be capable of: (a) controlling the gas supplier so as to supply a processing gas as the gas to the shower head, and (b) controlling the gas supplier so as to supply a non-processing gas as the gas to the shower head.

Abstract: An electronic component according to an aspect of the present disclosure includes an element body and a terminal electrode. The element body includes an outer surface provided with a depression. The terminal electrode is disposed on the element body. The terminal electrode includes a first electrode portion and a second electrode portion. The first electrode portion is disposed in the depression. The second electrode portion protrudes from the depression. The second electrode portion is thicker than the first electrode portion.

Abstract: There is provided a technique that includes: (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature; (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.

Abstract: There is provided a technique for suppressing interference between processes respectively performed in the plurality of reactors. According to one aspect thereof, a substrate processing apparatus includes: a first vessel including a transfer port and a process chamber; a second vessel adjacent to the first vessel and communicating with the first vessel via the transfer port; a lid for closing the transfer port; a seal arranged between the transfer port and the lid; and a controller for controlling the inner pressure of the first vessel to be lower than the inner pressure of the second vessel with the transfer port closed by the lid while the substrate is processed in the process chamber and the inner pressure of the first vessel to be higher than the inner pressure of the second vessel after the substrate is processed and before the first vessel comes into communication with the second vessel.

Abstract: There is provided a technique that includes: etching a portion of a first film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: supplying an etching gas into a process chamber while raising an internal pressure of the process chamber in a state in which the substrate having the first film formed on the surface of the substrate is accommodated in the process chamber; and lowering the internal pressure of the process chamber by exhausting an interior of the process chamber in a state in which supply of the etching gas into the process chamber is stopped.

Abstract: There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying a non-halogen-based second process gas to the substrate in the process chamber. Further, an internal pressure of the process chamber in the act of supplying the first process gas is set to be higher than an internal pressure of the process chamber in the act of supplying the second process gas.

Abstract: There is provided a technique that includes partially etching a film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) setting a temperature of the substrate having the first film formed on the surface to a first temperature; (b) stabilizing an in-plane temperature of the substrate at the first temperature; and (c) lowering the temperature of the substrate having the in-plane temperature stabilized at the first temperature from the first temperature to a second temperature that is lower than the first temperature, wherein in (c), an etching gas is supplied to the substrate for a predetermined period.

Abstract: The present invention provides a technology that can reduce erroneous detection and detect a suspicious person from an image at high accuracy. A suspicious person detection device according to one example embodiment of the present invention includes: an eye direction detection unit that detects an eye direction of a subject; a face direction detection unit that detects a face direction of the subject; an environment information acquisition unit that acquires environment information indicating arrangement of an object around the subject; and a determination unit that, based on the face direction, the eye direction, and the environment information, determines whether or not the subject is showing suspicious behavior.

Abstract: Provided is an information processing apparatus including a detection unit that detects a difference from a previously detected marker in a predetermined marker, by image recognition processing on an image obtained by image-capturing an arrangement place of an article; and an execution unit that executes a process in accordance with the difference.

Abstract: An electronic component according to an aspect of the present disclosure includes an element body and a terminal electrode. The element body includes an outer surface provided with a depression. The terminal electrode is disposed on the element body. The terminal electrode includes a first electrode portion and a second electrode portion. The first electrode portion is disposed in the depression. The second electrode portion protrudes from the depression. The second electrode portion is thicker than the first electrode portion.

Abstract: There is provided a technique that includes: etching a portion of a first film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: supplying an etching gas into a process chamber while raising an internal pressure of the process chamber in a state in which the substrate having the first film formed on the surface of the substrate is accommodated in the process chamber; and lowering the internal pressure of the process chamber by exhausting an interior of the process chamber in a state in which supply of the etching gas into the process chamber is stopped.

Abstract: There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.

Abstract: There is provided a technique that includes partially etching a film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) setting a temperature of the substrate having the first film formed on the surface to a first temperature; (b) stabilizing an in-plane temperature of the substrate at the first temperature; and (c) lowering the temperature of the substrate having the in-plane temperature stabilized at the first temperature from the first temperature to a second temperature that is lower than the first temperature, wherein in (c), an etching gas is supplied to the substrate for a predetermined period.

Abstract: There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying a non-halogen-based second process gas to the substrate in the process chamber. Further, an internal pressure of the process chamber in the act of supplying the first process gas is set to be higher than an internal pressure of the process chamber in the act of supplying the second process gas.

Abstract: The present invention provides a technology that can reduce erroneous detection and detect a suspicious person from an image at high accuracy. A suspicious person detection device according to one example embodiment of the present invention includes: an eye direction detection unit that detects an eye direction of a subject; a face direction detection unit that detects a face direction of the subject; an environment information acquisition unit that acquires environment information indicating arrangement of an object around the subject; and a determination unit that, based on the face direction, the eye direction, and the environment information, determines whether or not the subject is showing suspicious behavior.

Abstract: There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying a non-halogen-based second process gas to the substrate in the process chamber. Further, an internal pressure of the process chamber in the act of supplying the first process gas is set to be higher than an internal pressure of the process chamber in the act of supplying the second process gas.

Abstract: There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.

Abstract: Provided is an information processing apparatus including a detection unit that detects a difference from a previously detected marker in a predetermined marker, by image recognition processing on an image obtained by image-capturing an arrangement place of an article; and an execution unit that executes a process in accordance with the difference.