Patents by Inventor Atsushi Sawachi

Atsushi Sawachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210216088
    Abstract: A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.
    Type: Application
    Filed: March 29, 2021
    Publication date: July 15, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Publication number: 20210175055
    Abstract: A measuring device for a vacuum processing apparatus including a processing chamber having a first gate for loading and unloading a substrate and a second gate different from the first gate is provided. The measuring device includes a case having art opening that is sized to correspond to the second gate of the processing chamber and is airtightly attachable to the second gate, a decompressing mechanism configured to reduce a pressure in the case, and a measuring mechanism accommodated in the case and configured to measure a state in the processing chamber through the opening in a state where the pressure in the case is reduced by the decompressing mechanism.
    Type: Application
    Filed: December 5, 2020
    Publication date: June 10, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi SAWACHI, Ichiro SONE, Takuya NISHIJIMA, Suguru SATO
  • Publication number: 20210134564
    Abstract: A gas supply system includes first and second gas supply lines, first and second valves, and a controller. The first gas supply line is connected between a process gas source and a substrate processing chamber and has an intermediate node. The second gas supply line is connected between a purge gas source and the intermediate node. The first valve is disposed upstream of the intermediate node on the first gas supply line. The second valve is disposed upstream of the first valve on the first gas supply line. A controller controls the first and second valves to open the first and second valves in a first mode for supplying a process gas from the process gas source to the substrate processing chamber, and close the first and second valves in a second mode for supplying a purge gas from the purge gas source to the substrate processing chamber.
    Type: Application
    Filed: October 26, 2020
    Publication date: May 6, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Patent number: 10996688
    Abstract: A gas supply system according to the present disclosure includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes. The gas supply system also includes a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes. The gas supply system further includes a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: May 4, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Publication number: 20210111004
    Abstract: A flow rate controller includes a valve and a valve control unit. The valve is configured to control a flow rate of a gas supplied to a processing device. The valve control unit is configured to open the valve to start a control of the flow rate of the gas when the processing device has issued a command that instructs a start of supplying gas; calculate a cumulative flow amount by integrating the flow rate of the gas at every predetermined cycle from a time point at which the command is issued; and close the valve to stop the control of the flow rate of the gas at a time point at which the calculated cumulative flow amount has reached a predetermined target cumulative flow amount.
    Type: Application
    Filed: June 26, 2019
    Publication date: April 15, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Atsushi SAWACHI
  • Publication number: 20210043425
    Abstract: When a gas supplied to a gas injection unit is switched from a first processing gas to a second processing gas, a controller of a gas supply system performs control to open a first supply on/off valve connected to the gas injection unit and provided in a first gas supply line for supplying the first processing gas and a second exhaust on/off valve provided in a first gas exhaust line branched from the first gas supply line, close a second supply on/off valve connected to the gas injection unit and provided in a second gas supply line for supplying the second processing gas and a first exhaust on/off valve provided in a second gas exhaust line branched from the second gas supply line; and then open the second supply on/off valve and the first exhaust on/off valve and close the first supply on/off valve and the second exhaust on/off valve.
    Type: Application
    Filed: June 18, 2019
    Publication date: February 11, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Atsushi SAWACHI
  • Publication number: 20210013012
    Abstract: A performance calculation method is provided. In the performance calculation method, shipment inspection data of multiple flow rate controllers are acquired. Further, first performance values indicating, as deviation values, performance of the flow rate controllers are calculated based on the acquired shipment inspection data and first coefficients for items indicating the performance of the flow rate controllers. Further, second performance values indicating, as deviation values, performance of a processing apparatus using the flow rate controllers are calculated based on the calculated first performance values and second coefficients for items indicating the performance of the processing apparatus.
    Type: Application
    Filed: July 7, 2020
    Publication date: January 14, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Patent number: 10665430
    Abstract: A gas supply system includes: a first flow channel connecting a first gas source and a chamber; a second flow channel connecting a second gas source and the first flow channel; a control valve, provided in the second flow channel, configured to control a flow rate of the second gas; an orifice provided downstream of the control valve and at a terminus of the second flow channel; a switching valve, provided at a connection point between the first flow channel and the terminus of the second flow channel, configured to control a supply timing of the second gas; an exhaust mechanism, connected to a flow channel between the control valve and the orifice in the second flow channel, configured to exhaust the second gas; and a controller configured to bring the control valve, the switching valve and the exhaust mechanism into operation.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: May 26, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura, Kouji Nishino, Yohei Sawada, Yoshiharu Kishida
  • Patent number: 10665431
    Abstract: A method for performing a process on a target in a chamber. A gas discharge unit includes a first space having a discharge hole for discharging a first gas, a second space having a discharge hole for discharging a second gas and a third space having a discharge hole for discharging a gas generated between the first and second spaces. A distribution unit includes a first distribution pipe communicating with the first space, a second distribution pipe communicating with the second space and a third distribution pipe communicating with the third space. A valve group includes a first valve opened or closed to the first distribution pipe and a second valve opened or closed to the second distribution pipe. The method includes switching, without mixing the first gas and the second gas, the gas discharged from the discharge hole in the third space by opening or closing the valve group.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: May 26, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuyuki Tezuka, Kenichi Kato, Atsushi Sawachi, Takamichi Kikuchi, Takanori Mimura
  • Publication number: 20200124456
    Abstract: The method of inspecting a flow rate controller for controlling a flow rate of a fluid, the flow rate controller including a first pressure detector for detecting a first pressure that is a pressure of the fluid, and a diaphragm valve provided downstream of the first pressure detector and having a diaphragm and a piezoelectric element for driving the diaphragm, the method including: acquiring reference data including the first pressure and a control value of the piezoelectric element with respect to a set flow rate of the fluid; measuring target data including the first pressure and the control value of the piezoelectric element with respect to the set flow rate of the fluid after execution of the acquiring; and determining whether or not there is a problem in the diaphragm valve, by comparing the reference data with the target data.
    Type: Application
    Filed: October 18, 2019
    Publication date: April 23, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Publication number: 20200124455
    Abstract: The method for inspecting the flow rate controller for controlling a flow rate of a fluid includes creating and recording a three-dimensional database in which a first pressure, a set flow rate or a second pressure, and a control value of a piezoelectric element are associated with each other, based on reference data, measuring, as target data, control values of the piezoelectric element corresponding to the first pressure detected by a first pressure detector and the set flow rate specified in a recipe of a substrate processing process or the second pressure detected by a second pressure detector, at the time of the execution of the substrate processing process, and determining whether or not there is a problem in a diaphragm valve, by comparing the target data with the reference data included in the three-dimensional database.
    Type: Application
    Filed: October 18, 2019
    Publication date: April 23, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Patent number: 10607819
    Abstract: A method for cleaning a process chamber of a processing apparatus including the process chamber and a gas supply mechanism. The gas supply mechanism includes a flow splitter, a first flow path communicating with an upstream end of the flow splitter, a first valve provided in the first flow path, a second flow path communicating with a downstream end of the flow splitter and connected to the process chamber, a second valve provided in the second flow path, a bypass flow path connecting the first flow path and the second flow path, and a bypass valve provided in the bypass flow path. The method includes a step of closing the first valve and the second valve and opening the bypass valve, and a step of cleaning the process chamber by introducing a gas through the bypass flow path into the process chamber after opening the bypass valve.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: March 31, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Eiji Takahashi, Norikazu Sasaki, Atsushi Sawachi
  • Patent number: 10533916
    Abstract: Leaks in valves provided in a plurality of pipes connected to a plurality of gas sources are inspected. In a method of an embodiment, a first valve provided in a first pipe connected to a gas source is closed, and a second valve provided in a first pipe on a downstream side of the first valve is opened. A pressure increase is detected by a pressure gauge on a downstream side of the first pipe. In addition, the first valve is opened, and the second valve is closed. A pressure increase is detected by a pressure gauge on a downstream side of the first pipe.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: January 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Patent number: 10472717
    Abstract: A gas supply system includes a first device to a third device. A plurality of integral units of the first device is configured to select one or more gases from one or more gas sources and supply the selected gases. The second device is configured to distribute plural gases from the integral units and supply the distributed gases while controlling flow rates of the distributed gases. The third device is configured to exhaust the gases within the gas supply system to a gas exhaust device.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: November 12, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norikazu Sasaki, Jun Yamashima, Yoshiyasu Sato, Kenichi Nogami
  • Publication number: 20190138033
    Abstract: A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.
    Type: Application
    Filed: November 5, 2018
    Publication date: May 9, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Patent number: 10229844
    Abstract: Throughput of the processing can be improved. A gas supply system includes a plurality of element devices which constitute the gas supply system and a base 212 on which the plurality of element devices are disposed. Some of the element devices are disposed on a surface 212a of the base 212, and the others are disposed on a surface 212b of the base 212, which is opposite to the surface 212a of the base 212. The plurality of element devices may be implemented by, for example, a flow rate controller FD and a secondary valve FV2. The secondary valve FV2 is disposed on the surface 212b, which is opposite to the surface 212a of the base 212 where the flow rate controller FD is disposed.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: March 12, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura, Yoshiyasu Sato
  • Publication number: 20180294145
    Abstract: A method for performing a process on a target in a chamber. A gas discharge unit includes a first space having a discharge hole for discharging a first gas, a second space having a discharge hole for discharging a second gas and a third space having a discharge hole for discharging a gas generated between the first and second spaces. A distribution unit includes a first distribution pipe communicating with the first space, a second distribution pipe communicating with the second space and a third distribution pipe communicating with the third space. A valve group includes a first valve opened or closed to the first distribution pipe and a second valve opened or closed to the second distribution pipe. The method includes switching, without mixing the first gas and the second gas, the gas discharged from the discharge hole in the third space by opening or closing the valve group.
    Type: Application
    Filed: June 8, 2018
    Publication date: October 11, 2018
    Inventors: Kazuyuki Tezuka, Kenichi Kato, Atsushi Sawachi, Takamichi Kikuchi, Takanori Mimura
  • Publication number: 20180180509
    Abstract: Leaks in valves provided in a plurality of pipes connected to a plurality of gas sources are inspected. In a method of an embodiment, a first valve provided in a first pipe connected to a gas source is closed, and a second valve provided in a first pipe on a downstream side of the first valve is opened. A pressure increase is detected by a pressure gauge on a downstream side of the first pipe. In addition, the first valve is opened, and the second valve is closed. A pressure increase is detected by a pressure gauge on a downstream side of the first pipe.
    Type: Application
    Filed: July 15, 2016
    Publication date: June 28, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Publication number: 20180122620
    Abstract: Processing gases respectively supplied from multiple gas supply lines into a processing vessel can be switched at a high speed in a uniform manner. A plasma processing apparatus includes the processing vessel configured to perform therein a plasma process to a target substrate; and a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable. Further, the first gas discharge holes and the second gas discharge holes independently and respectively introduce a first processing gas and a second processing gas, which are respectively supplied from the first gas supply line and the second gas supply line and used in the plasma process, into the processing vessel.
    Type: Application
    Filed: December 26, 2017
    Publication date: May 3, 2018
    Inventors: Norihiko AMIKURA, Norikazu SASAKI, Atsushi SAWACHI
  • Patent number: 9904299
    Abstract: A gas supply control method uses a pressure control flowmeter and first and second valves provided upstream and downstream, respectively, of the pressure control flowmeter in a gas supply line. The pressure control flowmeter includes a control valve and an orifice. The gas supply control method includes maintaining a pressure P1 of a first gas supply pipe between the orifice and the control valve and a pressure P2 of a second gas supply pipe between the orifice and the second valve so as to satisfy P1>2×P2. The supply of gas is controlled by controlling the opening and closing of the second valve with the first valve being open and the control valve being controlled. A volume V1 of the first gas supply pipe and a volume V2 of the second gas supply pipe have a relationship of V1/V2?9.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: February 27, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Kumiko Ono, Hiroshi Tsujimoto, Atsushi Sawachi, Norihiko Amikura, Norikazu Sasaki, Yoshitaka Kawaguchi