Abstract: According to one embodiment, a deposition method includes preparing a processing substrate in which a lower electrode, a rib, and a partition including a lower portion and an upper portion arranged on the lower portion and protruding from a side surface of the lower portion are formed above a substrate, setting a spread angle of vapor of a first material emitted from a first deposition head to a first angle, and depositing the first material on the processing substrate, and setting a spread angle of vapor of a second material emitted from a second deposition head to a second angle larger than the first angle, and depositing the second material on the processing substrate on which the first material is deposited.

Abstract: A user equipment includes a receiving unit configured to receive, from a network node in a VPLMN (Visited Public land mobile network), information indicating a PLMN to be prioritized and information indicating a trigger of PLMN selection; and a control unit configured to execute the PLMN selection, based on the information indicating the PLMN to be prioritized and the information indicating the trigger of the PLMN selection.

Abstract: A recording apparatus includes a conveyance unit that conveys a recording medium in a first direction toward a recording head for ejecting a liquid, a tank including a containing chamber containing the liquid to be supplied to the recording head, and an injection port through which the liquid is injected into the containing chamber, the tank being disposed downstream of the conveyance unit in the first direction, a rotatable lever that holds a tank cap for closing the injection port, and a cover that rotates about a rotation shaft between an open position for exposing the lever and a closed position for covering the lever, the rotation shaft being disposed upstream of the conveyance unit in the first direction. The cover includes a sliding portion that is provided on a surface facing the lever and comes into contact with the lever while the cover is rotating toward the closed position.

Abstract: In 5G cell (230) of 5G system (200), upon detecting that access to the 5G system (200) is barred, the 5G system (200) is congested, 5G core network (220) of the 5G system (200) does not support IMS-type communication service, or fallback to 4G system (300) is instructed, UE (100) selects 4G cell (330) of the 4G system (300) as a target cell for connection. The UE (100) transmits a connection request signal for the IMS-type communication service to the target cell for connection.

Abstract: A power transmission apparatus includes a controller that controls a power transmitter that performs wireless power transmission. The controller is configured to: cause the processor to: cause the power transmitter to emit a first power transmission beam for which a first power is set; acquire feedback information on a result of reception of the first power transmission beam in a power reception apparatus; identify a power receiving capability in the power reception apparatus; and determine, with reference to the power receiving capability and the reception result, a second power which is usable in wireless power supply for the power reception apparatus and which is larger than the first power. The power receiving capability includes a maximum value of an input power range of the power reception apparatus. The wireless power transmission uses an electromagnetic wave having a frequency equal to or higher than that of a microwave.

Abstract: A recording apparatus includes a tank including a chamber configured to store liquid to be supplied to a recording head that ejects the liquid and a filling port from which the liquid is injected into the chamber, and an injection auxiliary member configured to assist injecting of the liquid into the chamber from the filling port, the injection auxiliary member including a first and a second flow channels each defined by a first or a second upper end portion that opens toward outside of the tank and a first or a second lower end portion that opens toward inside of the tank, wherein the second flow channel has an expansion portion arranged in a middle portion between the second upper end portion and the second lower end portion and configured to form a step to expand a cross-sectional area.

Abstract: According to one embodiment, an evaporation device includes a first chamber group including a plurality of evaporation chambers arranged in line in a first conveyance direction, a second chamber group including a plurality of evaporation chambers arranged in line in a second conveyance direction, a first rotation chamber which is connected to a first evaporation chamber located at a upstream position in the first conveyance direction and a second evaporation chamber located at a downstream position in the second conveyance direction, and a second rotation chamber which is connected to a third evaporation chamber located at a downstream position in the first conveyance direction and a fourth evaporation chamber located at a upstream position in the second conveyance direction.

Abstract: A blind bolt with a bolt head, a shaft portion on which a male screw is formed, and a bolt. An outer nut having a polygonal outer surface, and an outer nut hole penetrating in the axial direction. A cylindrical valve sleeve formed with a sleeve hole and an inner nut having a cylindrical portion. A nut head portion formed at one end of the cylindrical portion, and an inner nut hole having a female screw formed in a part inside. A plurality of outer peripheral grooves, extending in the outer peripheral direction are formed on the outer circumference of the valve sleeve. The cylindrical portion of the inner nut being inserted into the sleeve hole of the valve sleeve, the tip portion of the cylindrical portion inserted into the outer nut hole of the outer nut to prevent the inner nut from rotating with respect to the outer nut.

Abstract: According to an embodiment, a manufacturing method allows the manufacture of a display device including a partition including a lower portion provided on a rib including a pixel aperture and an upper portion protruding from a side surface of the lower portion. The method includes forming a lower electrode, forming a rib layer, forming a lower layer, forming an upper layer, forming a resist, forming the rib by a first etching process, forming the upper portion by a second etching process after the first etching process, and forming the lower portion by a third etching process after the second etching process.

Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

Abstract: According to one embodiment, a display device includes first and second lower electrodes, a rib, a partition including a lower portion and an upper portion, a first organic layer disposed on the first lower electrode, a second organic layer disposed on the second lower electrode, a first upper electrode disposed on the first organic layer, a second upper electrode disposed on the second organic layer, a first sealing layer disposed above the first upper electrode, in contact with the lower portion and extending to above the upper portion and a second sealing layer disposed above the second upper electrode, in contact with the lower portion, extending to above the upper portion, and spaced apart from the first sealing layer.

Abstract: According to one embodiment, a deposition method includes preparing a processing substrate in which a lower electrode, a rib, and a partition including a lower portion and an upper portion arranged on the lower portion and protruding from a side surface of the lower portion are formed above a substrate, setting a spread angle of vapor of a first material emitted from a first deposition head to a first angle, and depositing the first material on the processing substrate, and setting a spread angle of vapor of a second material emitted from a second deposition head to a second angle larger than the first angle, and depositing the second material on the processing substrate on which the first material is deposited.

Abstract: According to one embodiment, a deposition device includes a stage, a deposition head opposed to the stage, and a chamber accommodating the stage and the deposition head. The deposition head comprises a deposition source heating a material and generating vapor, a nozzle connected to the deposition source to emit the vapor generated by the deposition source, a control plate comprising a sleeve surrounding the nozzle, and a movement mechanism moving the control plate along an extension direction of the sleeve.

Abstract: Each of a plurality of internal electrodes is electrically connected to a corresponding external electrode of a plurality of external electrodes. A plurality of auxiliary internal electrodes are disposed in the same layer as the plurality of internal electrodes to be located between each of a pair of side surfaces and the plurality of internal electrodes. Each of the plurality of external electrodes includes a pair of side surface electrode portions disposed on the pair of side surfaces and including a conductive resin layer. Each of the plurality of auxiliary internal electrodes is electrically connected to the external electrode to which the internal electrode located in the same layer is not electrically connected, and is located between the conductive resin layer to which the internal electrode located in the same layer is not electrically connected and the internal electrode located in the same layer.

Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

Abstract: A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.

Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

Abstract: A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.

Abstract: An electronic component includes an element body and an external electrode disposed on the element body. The external electrode includes a conductive resin layer, a solder plating layer arranged to constitute an outermost layer of the external electrode, and an intermediate plating layer disposed between the conductive resin layer and the solder plating layer. The intermediate plating layer has better solder leach resistance than metal contained in the conductive resin layer. An opening is formed in the intermediate plating layer. The solder plating layer is formed on the conductive resin layer through the opening.

Abstract: A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.