Patents by Inventor Atsushi Ueda

Atsushi Ueda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11642830
    Abstract: Provided is a novel container sterilization method in which no liquid agent is used. A container sterilization method is a method of performing sterilization by supplying a sterilization component to a container that is continuously conveyed along a predetermined conveyance path, the container sterilization method including supplying a humid ozone gas to a sterilization area, the humid ozone gas being an ozone gas that has humidity, the sterilization area being partitioned by a sterilization chamber that contains the conveyance path. The humidity of the humid ozone gas to be supplied to the sterilization region is regulated, depending on a temperature of the containers to be conveyed to the sterilization region.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: May 9, 2023
    Assignee: MITSUBISHI HEAVY INDUSTRIES MACHINERY SYSTEMS, LTD.
    Inventors: Atsushi Ueda, Kohichi Aoki, Daisuke Tanaka, Yasue Takeuchi, Kohichi Tamura, Takashi Minamihonoki
  • Patent number: 11495833
    Abstract: A battery comprises a first polarity terminal that is attached via a first insulating member to an opening of an outer case. A first polarity plate includes: a first core formed of a conductive material; and a first active material layer. A first drawn-out portion is formed from a side of the first core on the first polarity terminal side thereof being drawn further out than a side of the first active material layer on the first polarity terminal side thereof. The first drawn-out portion includes a first bent portion that is bent towards the radially inner or outer side of the electrode body. A first surface of a first polarity collector plate contacts the surface of the first bent portion on the first polarity terminal side, and the first polarity terminal connects directly or via a conductive member to a second surface of the first polarity collector plate.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: November 8, 2022
    Assignees: SANYO Electric Co., Ltd., PANASONIC HOLDINGS CORPORATION
    Inventors: Natsuhiko Mukai, Satoshi Yamamoto, Masaki Deguchi, Taisuke Yamamoto, Atsushi Ueda, Masanobu Takeuchi
  • Patent number: 11483917
    Abstract: A chamber device may include a concentrating mirror, a central gas supply port, an inner wall, an exhaust port, a recessed portion, and a lateral gas supply port. The recessed portion may be on a side lateral to the focal line and recessed outward from the inner wall when viewed from a direction perpendicular to the focal line. The lateral gas supply port is formed at the recessed portion and may supply gas toward gas supplied from the central gas supply port so that a flow direction of the gas supplied from the central gas supply port is bent from a direction along the focal line toward the exhaust port and an internal space of the recessed portion.
    Type: Grant
    Filed: January 22, 2021
    Date of Patent: October 25, 2022
    Assignee: Gigaphoton Inc.
    Inventors: Atsushi Ueda, Takayuki Osanai, Koichiro Koge
  • Patent number: 11366394
    Abstract: An extreme ultraviolet light generation system may include a chamber, a first partition wall having at least one opening which provides communication between a first space and a second space, an EUV light concentrating mirror located in the second space and configured to concentrate extreme ultraviolet light generated in a plasma generation region located in the first space, a first gas supply port formed at the chamber, and a gas exhaust port formed in the first partition wall, a distance between the center of the plasma generation region and an edge of the at least one opening being equal to or more than a stop distance LSTOP [mm] calculated by the following equation: LSTOP=272.8·EAVG0.4522·P?1 EAVG [eV] representing average kinetic energy of ions generated in the plasma generation region and P [Pa] representing a gas pressure inside the first partition wall.
    Type: Grant
    Filed: October 1, 2021
    Date of Patent: June 21, 2022
    Assignee: Gigaphoton Inc.
    Inventors: Koichiro Koge, Atsushi Ueda, Takayuki Osanai
  • Patent number: 11363705
    Abstract: An extreme ultraviolet light generation apparatus may include a chamber device, a concentrating mirror, a central gas supply port configured to supply gas along a focal line passing through a first focal point and a second focal point from the center side of the reflection surface, and a first peripheral gas supply port disposed at a peripheral portion of the reflection surface and configured to supply gas in a direction from the outer side of the reflection surface toward the inner side of the reflection surface. The first peripheral gas supply port may supply gas, when viewed along the focal line, in an inclined direction inclined to a tangential direction side of the peripheral portion at the peripheral portion where the first peripheral gas supply port is located with respect to a first straight line passing through the first peripheral gas supply port and the focal line.
    Type: Grant
    Filed: January 22, 2021
    Date of Patent: June 14, 2022
    Assignee: Gigaphoton Inc.
    Inventors: Takayuki Osanai, Atsushi Ueda, Koichiro Koge, Akihiro Ohsawa, Toshiya Shintani, Yoshiaki Yoshida, Yuki Ishida, Yosuke Takada
  • Patent number: 11350514
    Abstract: An extreme ultraviolet light generation apparatus includes a chamber device, a concentrating mirror, an exhaust port, and a central gas supply port. The exhaust port is formed at the chamber device and is formed on the side lateral to a focal line and opposite to the reflection surface with respect to the plasma generation region. The central gas supply port is formed on the side opposite to the exhaust port with respect to the plasma generation region on the supply line passing through the exhaust port, the plasma generation region, and an inner side of a peripheral portion of the reflection surface. The central gas supply port supplies the gas toward the exhaust port along the supply line through the plasma generation region.
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: May 31, 2022
    Assignee: Gigaphoton Inc.
    Inventors: Koichiro Koge, Atsushi Ueda, Takayuki Osanai
  • Publication number: 20220146943
    Abstract: An extreme ultraviolet light generation system may include a chamber, a first partition wall having at least one opening which provides communication between a first space and a second space, an EUV light concentrating mirror located in the second space and configured to concentrate extreme ultraviolet light generated in a plasma generation region located in the first space, a first gas supply port formed at the chamber, and a gas exhaust port formed in the first partition wall, a distance between the center of the plasma generation region and an edge of the at least one opening being equal to or more than a stop distance LSTOP [mm] calculated by the following equation. LSTOP=272.8·EVG0.
    Type: Application
    Filed: October 1, 2021
    Publication date: May 12, 2022
    Applicant: Gigaphoton Inc.
    Inventors: Koichiro KOGE, Atsushi UEDA, Takayuki OSANAI
  • Publication number: 20220082927
    Abstract: An extreme ultraviolet light generation apparatus may include a chamber, a first partition wall covering a plasma generation region in the chamber and having a first opening, an EUV light concentrating mirror located in a first space inside the chamber and outside the first partition wall and configured to concentrate extreme ultraviolet light generated in the plasma generation region and having passed through the first opening, a first gas supply port formed at the chamber and configured to supply gas to the first space, and a gas exhaust port formed in the first partition wall and configured to exhaust gas in a second space inside the first partition wall to outside of both the first partition wall and the chamber.
    Type: Application
    Filed: August 9, 2021
    Publication date: March 17, 2022
    Applicant: Gigaphoton Inc.
    Inventors: Yusuke HOSHINO, Yukio WATANABE, Toshihiro NISHISAKA, Atsushi UEDA, Koichiro KOGE, Takayuki OSANAI, Gouta NIIMI
  • Patent number: 11272608
    Abstract: An extreme ultraviolet light generation apparatus may include a chamber causing a target substance to be turned into plasma with laser light, a light concentrating mirror concentrating extreme ultraviolet light generated by the turning of the target substance into plasma, a gas supply unit supplying gas into the chamber, a magnetic field generation unit generating a magnetic field including a magnetic field axis that crosses a light path of the extreme ultraviolet light, a first exhaust port arranged at a position through which the magnetic field axis passes in the chamber, a second exhaust port arranged at a position opposite to the light concentrating mirror in the chamber, and a gas exhaust amount adjustment unit adjusting a ratio between an exhaust amount of first exhaust gas exhausted from the first exhaust port and an exhaust amount of second exhaust gas exhausted from the second exhaust port.
    Type: Grant
    Filed: April 9, 2021
    Date of Patent: March 8, 2022
    Assignee: Gigaphoton Inc.
    Inventors: Atsushi Ueda, Shinji Nagai
  • Patent number: 11211239
    Abstract: An EUV light generation apparatus includes: a chamber; an EUV light condensing mirror positioned inside the chamber and having a reflective surface that determines a first focal point and a second focal point, the reflective surface and the second focal point being positioned on respective sides of a first surface; at least one magnet configured to generate a magnetic field at and around the first focal point; a first gas supply unit configured to supply first gas to the reflective surface in the chamber and opened near an outer peripheral part of the reflective surface; a second gas supply unit configured to supply second gas into the chamber and opened at a position between the first surface and the second focal point; and a discharge device configured to discharge gas inside the chamber and opened at a position between the first focal point and the at least one magnet.
    Type: Grant
    Filed: February 10, 2020
    Date of Patent: December 28, 2021
    Assignee: Gigaphoton Inc.
    Inventors: Atsushi Ueda, Takashi Saito
  • Patent number: 11155562
    Abstract: The present invention provides halichondrin analogs, such as compounds of Formula (I). The compounds may bind to microtubule sites, thereby inhibiting microtubule dynamics. Also provided are methods of synthesis, pharmaceutical compositions, kits, methods of treatment, and uses that involve the compounds for treatment of a proliferative disease (e.g., cancer). Compounds of the present invention are particularly useful for the treatment of metastatic breast cancer, non-small cell lung cancer, prostate cancer, and sarcoma. The included methods of synthesis are useful for the preparation of compounds of Formula (I)-(III) along with naturally occurring halicondrins (e.g., halichondrin B & C, norhalichondrin A, B, & C, and homohalichondrin A, B, & C). Also included are methods for interconverting between the halichondrins, norhalichondrins, and homohalichondrins and their unnatural epimers at the C38 ketal stereocenter through the use of an acid-mediated equilibration.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: October 26, 2021
    Assignee: President and Fellows of Harvard College
    Inventors: Yoshito Kishi, Atsushi Ueda, Akihiko Yamamoto, Daisuke Kato
  • Patent number: 11145429
    Abstract: An extreme ultraviolet chamber apparatus includes: a chamber; an EUV condensing mirror arranged in the chamber; a first nozzle arranged in an outer peripheral portion of the EUV condensing mirror and configured to feed a gas in a first direction along a reflective surface of the EUV condensing mirror; a second nozzle arranged in the outer peripheral portion of the EUV condensing mirror and configured to feed a gas in a second direction away from the EUV condensing mirror; and an exhaust port arranged in the chamber.
    Type: Grant
    Filed: March 17, 2020
    Date of Patent: October 12, 2021
    Assignee: Gigaphoton Inc.
    Inventors: Atsushi Ueda, Gota Niimi, Georg Soumagne
  • Patent number: 11139519
    Abstract: A sealed cell includes a bottomed cylindrical outer casing can. The outer casing can is formed by nickel-plated iron, and a lead connected to one of a positive electrode and a negative electrode, and the outer casing can, are welded by a welding part formed from the outside surface of the outer casing can toward the lead. The welding part is formed by molten traces and has a first layer and a second layer having a higher nickel concentration than the first layer. The first layer is formed from the lead through to the inside of the outer casing can, the second layer is formed so as to adjoin the first layer on the outside surface side of the outer casing can, and the whole of the first layer is covered with the second layer when the welding part is viewed from the outside of the outer casing can.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: October 5, 2021
    Assignees: SANYO Electric Co., Ltd., PANASONIC CORPORATION
    Inventors: Yusuke Tominaga, Kazumichi Shimizu, Shota Ikeda, Kyosuke Miyata, Atsushi Ueda, Sadahiro Hattori, Shinya Mori, Ryunosuke Yokoo, Koji Funami, Takaaki Kassai
  • Publication number: 20210307150
    Abstract: An extreme ultraviolet light generation apparatus includes a chamber device, a concentrating mirror, an exhaust port, and a central gas supply port. The exhaust port is formed at the chamber device and is formed on the side lateral to a focal line and opposite to the reflection surface with respect to the plasma generation region. The central gas supply port is formed on the side opposite to the exhaust port with respect to the plasma generation region on the supply line passing through the exhaust port, the plasma generation region, and an inner side of a peripheral portion of the reflection surface. The central gas supply port supplies the gas toward the exhaust port along the supply line through the plasma generation region.
    Type: Application
    Filed: January 28, 2021
    Publication date: September 30, 2021
    Applicant: Gigaphoton Inc.
    Inventors: Koichiro KOGE, Atsushi UEDA, Takayuki OSANAI
  • Publication number: 20210298160
    Abstract: An extreme ultraviolet light generation apparatus may include a chamber device, a concentrating mirror, a central gas supply port configured to supply gas along a focal line passing through a first focal point and a second focal point from the center side of the reflection surface, and a first peripheral gas supply port disposed at a peripheral portion of the reflection surface and configured to supply gas in a direction from the outer side of the reflection surface toward the inner side of the reflection surface. The first peripheral gas supply port may supply gas, when viewed along the focal line, in an inclined direction inclined to a tangential direction side of the peripheral portion at the peripheral portion where the first peripheral gas supply port is located with respect to a first straight line passing through the first peripheral gas supply port and the focal line.
    Type: Application
    Filed: January 22, 2021
    Publication date: September 23, 2021
    Applicant: Gigaphoton Inc.
    Inventors: Takayuki OSANAI, Atsushi UEDA, Koichiro KOGE, Akihiro OHSAWA, Toshiya SHINTANI, Yoshiaki YOSHIDA, Yuki ISHIDA, Yosuke TAKADA
  • Publication number: 20210289611
    Abstract: A chamber device may include a concentrating mirror, a central gas supply port, an inner wall, an exhaust port, a recessed portion, and a lateral gas supply port. The recessed portion may be on a side lateral to the focal line and recessed outward from the inner wall when viewed from a direction perpendicular to the focal line. The lateral gas supply port is formed at the recessed portion and may supply gas toward gas supplied from the central gas supply port so that a flow direction of the gas supplied from the central gas supply port is bent from a direction along the focal line toward the exhaust port and an internal space of the recessed portion.
    Type: Application
    Filed: January 22, 2021
    Publication date: September 16, 2021
    Applicant: Gigaphoton Inc.
    Inventors: Atsushi UEDA, Takayuki OSANAI, Koichiro KOGE
  • Publication number: 20210235571
    Abstract: An extreme ultraviolet light generation apparatus may include a chamber causing a target substance to be turned into plasma with laser light, a light concentrating mirror concentrating extreme ultraviolet light generated by the turning of the target substance into plasma, a gas supply unit supplying gas into the chamber, a magnetic field generation unit generating a magnetic field including a magnetic field axis that crosses a light path of the extreme ultraviolet light, a first exhaust port arranged at a position through which the magnetic field axis passes in the chamber, a second exhaust port arranged at a position opposite to the light concentrating mirror in the chamber, and a gas exhaust amount adjustment unit adjusting a ratio between an exhaust amount of first exhaust gas exhausted from the first exhaust port and an exhaust amount of second exhaust gas exhausted from the second exhaust port.
    Type: Application
    Filed: April 9, 2021
    Publication date: July 29, 2021
    Applicant: Gigaphoton Inc.
    Inventors: Atsushi UEDA, Shinji NAGAI
  • Publication number: 20210210792
    Abstract: A battery comprises a first polarity terminal that is attached via a first insulating member to an opening of an outer case. A first polarity plate includes: a first core formed of a conductive material; and a first active material layer. A first drawn-out portion is formed from a side of the first core on the first polarity terminal side thereof being drawn further out than a side of the first active material layer on the first polarity terminal side thereof. The first drawn-out portion includes a first bent portion that is bent towards the radially inner or outer side of the electrode body. A first surface of a first polarity collector plate contacts the surface of the first bent portion on the first polarity terminal side, and the first polarity terminal connects directly or via a conductive member to a second surface of the first polarity collector plate.
    Type: Application
    Filed: April 2, 2019
    Publication date: July 8, 2021
    Applicants: SANYO Electric Co., Ltd., Panasonic Corporation
    Inventors: Natsuhiko Mukai, Satoshi Yamamoto, Masaki Deguchi, Taisuke Yamamoto, Atsushi Ueda, Masanobu Takeuchi
  • Patent number: 11036143
    Abstract: An extreme ultraviolet light generation apparatus that generates extreme ultraviolet light by irradiating a target with a pulse laser beam includes: a chamber; a magnet that is positioned outside the chamber and forms a magnetic field (70) inside the chamber; a discharge path (37a) that is opened at a position on an inner wall surface of the chamber where the inner wall surface intersects a central axis of the magnetic field (70) and through which gas inside the chamber is discharged; and a gas supply unit (10a) configured to supply gas into the discharge path (37a) through an inner wall surface of the discharge path.
    Type: Grant
    Filed: April 15, 2020
    Date of Patent: June 15, 2021
    Assignee: Gigaphoton Inc.
    Inventor: Atsushi Ueda
  • Patent number: 10990016
    Abstract: An extreme ultraviolet light generation device includes: a chamber (2) having inside a plasma generating region (22) in which plasma is generated from a droplet of a target substance; an EUV light focusing mirror (23) having a reflection surface (23A) that reflects EUV light generated by the droplet being turned into the plasma in the plasma generating region; a magnetic field generation unit configured to generate a magnetic field ML for converging, toward a wall of the chamber, a charged particle generated by the droplet being turned into the plasma; and an etching gas supply unit (32) configured to supply etching gas along the reflection surface from an outer periphery of the EUV light focusing mirror, the etching gas supply unit being configured such that flow speed of etching gas supplied from one side of a plane S is higher than flow speed of etching gas supplied from the other side.
    Type: Grant
    Filed: October 10, 2019
    Date of Patent: April 27, 2021
    Assignee: Gigaphoton Inc.
    Inventor: Atsushi Ueda