Abstract: Provided are an adhesion preventing agent and an adhesion preventing method using the same. Specifically, provided are an adhesion preventing agent, including at least one anionized nanomaterial selected from the group consisting of anionized nanocellulose and anionized nanochitin, and an adhesion preventing method using the adhesion preventing agent.

Abstract: Imaging devices with increased numbers of parallel analog-digital converters with maintained chip size are disclosed. In one example, an imaging device has a stacked chip structure including semiconductor chips of first through third layers. A pixel array is formed on the semiconductor chip of the first layer. An analog circuit of an analog-digital converter is disposed on the semiconductor chip of the second or third layer. A digital circuit of the analog-digital converter is disposed on the other of the semiconductor chip of the second or third layer.

Abstract: A carbon foam comprising linear portions and node portions joining the linear portions, wherein the linear portions have a diameter of 0.1 ?m or more and 10.0 ?m or less, and the carbon foam has a surface with an area of 100 cm2 or more.

Abstract: The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material: where R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms, R3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R1 to R3 is substituted with a fluorine atom.

Abstract: Staying of a drain on a cylinder attached to a lower side of a valve casing is suppressed, and occurrence of corrosion of the cylinder is suppressed. A steam valve includes a valve casing, a valve disc disposed within the valve casing, a cylinder disposed on a lower side of the valve casing and having a piston rod extending upward, a valve stem vertically penetrating a lower portion of the valve casing and having one end coupled to the piston rod via a coupling and having another end coupled to the valve disc, a cover having a larger diameter than the piston rod and the coupling and configured to separate the piston rod and the coupling from each other by being interposed between the piston rod and the coupling, and a tubular skirt hanging down from a peripheral portion of the cover and surrounding a periphery of a head portion of the piston rod.

Abstract: A cold flake suppression method is provided. A molding device includes a sleeve, a tip, a sprue guide portion, a molding die, a sprue ring, a distributer, and a control device. The sprue guide portion includes a stamp portion, a runner portion, and a gate portion. The control device drives a supply device to slide the tip for molten metal to flow through the sleeve; sequentially calculates an amount of heat transfer changing continuously from the start of supply of molten metal until the tip slides to the position in FIG. 2, and calculates a total of the amounts as a total amount of heat transfer; and calculates a volume of the sprue guide portion based on information about the sprue guide portion input by an operator. Shapes of the sleeve and the sprue guide portion are determined to set a cold flake index equal to or less than 0.842.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. wherein R1 represents an isopropyl group, R2 represents a methyl group, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents a propane-1,2-diyl group and M represents copper, nickel, cobalt or manganese.

Abstract: An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):

Abstract: Provided is a method of producing a copper-containing layer, including: step 1: a step of reducing a surface of a substrate, provided that a substrate having a surface formed of a silicic acid compound is excluded, through use of a reducing agent; and step 2: a step of forming a copper-containing layer on the surface having been reduced in the step 1 through use of a thin-film forming raw material containing a copper compound by a plasma atomic layer deposition method.

Abstract: The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A1 represents an alkanediyl group having 1 to 5 carbon atoms.

Abstract: The present invention provides a tin compound represented by the following general formula (1) (in the formula (1), R1 to R4 each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and R5 represents an alkanediyl group having 1 to 15 carbon atoms), a thin-film forming raw material including the compound, a thin-film formed by using the thin-film forming raw material, a method of using the compound as a precursor for producing the thin-film, and a method of producing a thin-film including: introducing a raw material gas obtained by vaporizing the thin-film forming raw material into a treatment atmosphere having a substrate set therein; and subjecting the tin compound in the raw material gas to decomposition and/or a chemical reaction in the treatment atmosphere, to thereby produce a thin-film containing a tin atom on a surface of the substrate.

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

Abstract: Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.

Abstract: The present invention provides a method for producing an yttrium oxide-containing film by an atomic layer deposition method, including: a step (A) of introducing a raw material gas obtained by vaporizing a thin film-forming raw material containing tris(sec-butylcyclopentadienyl)yttrium into a processing atmosphere to deposit the tris(sec-butylcyclopentadienyl)yttrium on a substrate; and a step (B) of reacting the tris(sec-butylcyclopentadienyl)yttrium deposited on the substrate with a reactive gas containing a gas selected from the group consisting of oxygen plasma, ozone, ozone plasma, and mixtures thereof in the processing atmosphere to oxidize yttrium.

Abstract: A substrate processing method includes: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.

Abstract: Staying of a drain on a cylinder attached to a lower side of a valve casing is suppressed, and occurrence of corrosion of the cylinder is suppressed. A steam valve includes a valve casing, a valve disc disposed within the valve casing, a cylinder disposed on a lower side of the valve casing and having a piston rod extending upward, a valve stem vertically penetrating a lower portion of the valve casing and having one end coupled to the piston rod via a coupling and having another end coupled to the valve disc, a cover having a larger diameter than the piston rod and the coupling and configured to separate the piston rod and the coupling from each other by being interposed between the piston rod and the coupling, and a tubular skirt hanging down from a peripheral portion of the cover and surrounding a periphery of a head portion of the piston rod.

Abstract: The camera captures an image of a surrounding environment of a work vehicle and outputs image data indicative of the image. The shape sensor measures a three-dimensional shape of the surrounding environment and outputs 3D shape data indicative of the three-dimensional shape. A controller acquires the image data and the 3D shape data. The controller generates a three-dimensional projection model based on the 3D shape data. The three-dimensional projection model portrays the three-dimensional shape of the surrounding environment. The image is projected onto the three-dimensional projection model based on the image data, thereby generating display image data that represents a display image of the surrounding environment of the work vehicle.

Abstract: A method for producing an yttrium oxide-containing thin film by atomic layer deposition, the method comprising: a step for introducing a raw material gas containing tris(sec-butylcyclopentadienyl) yttrium into a treatment atmosphere in order to deposit tris(sec-butylcyclopentadienyl) yttrium on a substrate; and a step for introducing a reactive gas containing water vapor into the treatment atmosphere and causing the reactive gas to react with the tris(sec-butylcyclopentadienyl) yttrium that has been deposited on the substrate, thereby oxidizing yttrium is provided.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.