Abstract: An image forming apparatus includes an image forming unit, a reversing unit, a detection unit for detecting leading and trailing edges of a sheet, and an alignment unit for aligning an image with respect to the leading edge of the sheet, and generates an output item in which a first sheet with a first image and a second sheet with a second image are stacked, a surface with the first image of the first sheet and a surface with the second image of the second sheet face each other, and a trailing edge of the first sheet and a leading edge of the second sheet face each other. The alignment unit corrects a position of the second image with respect to the leading edge of the second sheet during formation of the second image based on a detection result of the trailing edge of the first sheet.

Abstract: Provided is a cobalt compound represented by the following general formula (1): where R1 to R7 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the following general formula (L-1), or a group represented by the following general formula (L-2); where R8 to R10 each independently represent an alkyl group having 1 to 5 carbon atoms, A1 and A2 each independently represent an alkanediyl group having 1 to 5 carbon atoms, and * represents a bonding site.

Abstract: Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.

Abstract: Provided is a thin-film forming raw material, including an alkoxide compound represented by the following general formula (1): where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, M represents a rare earth metal atom, and “n” represents a valence of the rare earth metal atom.

Abstract: A substrate processing method includes: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): M(R1)x1[A1-N(R2)(R3)]y1 ??(1) in the formula (1), R1, R2, and R3 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms, A1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, x1 represents an integer of from 0 to 2, y1 represents an integer of from 1 to 3, and M represents an indium atom or a zinc atom, provided that when M represents an indium atom, a compound in which x1 represents 2, y1 represents 1, and R1, R2, and R3 each represent a methyl group is excluded.

Abstract: Provided is a tin compound, which is represented by the following general formula (1): in the formula (1), R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms or an alkylsilyl group having 3 to 12 carbon atoms, R3 and R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and R5 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

Abstract: A cold flake suppression method is provided. A molding device includes a sleeve, a tip, a sprue guide portion, a molding die, a sprue ring, a distributer, and a control device. The sprue guide portion includes a stamp portion, a runner portion, and a gate portion. The control device drives a supply device to slide the tip for molten metal to flow through the sleeve; sequentially calculates an amount of heat transfer changing continuously from the start of supply of molten metal until the tip slides to the position in FIG. 2, and calculates a total of the amounts as a total amount of heat transfer; and calculates a volume of the sprue guide portion based on information about the sprue guide portion input by an operator. Shapes of the sleeve and the sprue guide portion are determined to set a cold flake index equal to or less than 0.842.

Abstract: An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):

Abstract: Provided is a method of etching a metal oxide film in a laminate including a substrate and the metal oxide film formed on a surface thereof by an atomic layer etching method, the method including: a first step of introducing, into a treatment atmosphere storing the laminate, at least one oxidizable compound selected from the group consisting of: an alcohol compound; an aldehyde compound; and an ester compound; and a second step of introducing an oxidizing gas into the treatment atmosphere after the first step.

Abstract: A polyamide resin composition is provided which can be blow molded while concurrently satisfying blow moldability and uniform wall thickness of the molten resin, exhibits excellent thermal stability when the resin composition is accumulated as a melt and thereby gives molded articles with a good surface appearance, and is further excellent in impact resistance at room and low temperatures. The polyamide resin composition includes, based on 100 mass % of the polyamide resin composition, 40 to 84 mass % of a polyamide resin (A), not less than 15 mass % of an olefin-based ionomer (B), 0 to 10 mass % of an impact modifier (C), and 0.1 to 3 mass % of heat resistant agents (D). The polyamide resin (A) includes at least one selected from the group consisting of aliphatic copolyamides (A-1) and aromatic copolyamides (A-2). The heat resistant agents (D) include two or more kinds of organic hindered phenol heat resistant agents (D-1).

Abstract: A spherical alumina powder having a maximum particle diameter showing a maximum peak in the range of 35 to 70 ?m, a frequency of 5 to 15%, and an accumulated value of frequencies respectively at 20 particle diameter points, obtained by dividing a particle diameter range of 1 to 20 ?m equally into 19 sections, of 3 to 17% by volume, the powder providing a ratio (VY/VX) of a viscosity VY of a resin composition Y to a viscosity VX of a resin composition X of 0.85 or more, composition X containing the powder and a vinyl group-containing polymethylsiloxane, the powder being contained in an amount of 88.1% by mass, the resin composition Y being the same as X except for containing the same powder as in composition X in an amount of 79.3% by mass and containing a powder for testing in an amount of 8.8% by mass.

Abstract: The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material: where R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms, R3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R1 to R3 is substituted with a fluorine atom.

Abstract: Staying of a drain on a cylinder attached to a lower side of a valve casing is suppressed, and occurrence of corrosion of the cylinder is suppressed. A steam valve includes a valve casing, a valve disc disposed within the valve casing, a cylinder disposed on a lower side of the valve casing and having a piston rod extending upward, a valve stem vertically penetrating a lower portion of the valve casing and having one end coupled to the piston rod via a coupling and having another end coupled to the valve disc, a cover having a larger diameter than the piston rod and the coupling and configured to separate the piston rod and the coupling from each other by being interposed between the piston rod and the coupling, and a tubular skirt hanging down from a peripheral portion of the cover and surrounding a periphery of a head portion of the piston rod.

Abstract: A cold flake suppression method is provided. A molding device includes a sleeve, a tip, a sprue guide portion, a molding die, a sprue ring, a distributer, and a control device. The sprue guide portion includes a stamp portion, a runner portion, and a gate portion. The control device drives a supply device to slide the tip for molten metal to flow through the sleeve; sequentially calculates an amount of heat transfer changing continuously from the start of supply of molten metal until the tip slides to the position in FIG. 2, and calculates a total of the amounts as a total amount of heat transfer; and calculates a volume of the sprue guide portion based on information about the sprue guide portion input by an operator. Shapes of the sleeve and the sprue guide portion are determined to set a cold flake index equal to or less than 0.842.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. wherein R1 represents an isopropyl group, R2 represents a methyl group, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents a propane-1,2-diyl group and M represents copper, nickel, cobalt or manganese.

Abstract: An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):

Abstract: Provided is a method of producing a copper-containing layer, including: step 1: a step of reducing a surface of a substrate, provided that a substrate having a surface formed of a silicic acid compound is excluded, through use of a reducing agent; and step 2: a step of forming a copper-containing layer on the surface having been reduced in the step 1 through use of a thin-film forming raw material containing a copper compound by a plasma atomic layer deposition method.

Abstract: The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A1 represents an alkanediyl group having 1 to 5 carbon atoms.