Patents by Inventor Atsutoshi Arakawa

Atsutoshi Arakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180019389
    Abstract: A magnetic material sputtering target formed from a sintered body containing at least Co and/or Fe and B, and containing B in an amount of 10 to 50 at %, wherein an oxygen content is 100 wtppm or less. Since the magnetic material sputtering target of the present invention can suppress the generation of particles caused by oxides, the present invention yields superior effects of being able to improve the yield upon producing magnetoresistive films and the like.
    Type: Application
    Filed: February 24, 2016
    Publication date: January 18, 2018
    Inventor: Atsutoshi Arakawa
  • Patent number: 9773653
    Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles.
    Type: Grant
    Filed: January 28, 2013
    Date of Patent: September 26, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Hideo Takami, Atsutoshi Arakawa
  • Patent number: 9761422
    Abstract: A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 ?m or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 ?m or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: September 12, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Atsutoshi Arakawa, Hideo Takami, Yuichiro Nakamura
  • Patent number: 9732414
    Abstract: A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: August 15, 2017
    Assignee: JX Nippon Mining and Metals Corporation
    Inventors: Atsushi Sato, Yuki Ikeda, Atsutoshi Arakawa, Hideo Takami, Yuichiro Nakamura
  • Publication number: 20160237552
    Abstract: Provided is a magnetic material sputtering target produced from a sintered compact having a B content of 17 at % or more and 40 at % or less, and remainder being one or more elements selected from Co and Fe, wherein the target includes a B-rich phase and a B-poor phase, and a number of the B-rich phases in which a maximum inscribed circle having a diameter of 15 ?m or more can be drawn is one or less. The B-rich phase is finely dispersed in the magnetic material sputtering target of the present invention, and the machinability of the target is consequently improved. Moreover, significant effects are yielded in that the generation of particles is inhibited and the yield in the production of thin films is improved when the target is used for sputtering with a magnetron sputtering equipment comprising a DC power supply.
    Type: Application
    Filed: November 20, 2014
    Publication date: August 18, 2016
    Inventor: Atsutoshi Arakawa
  • Patent number: 9269389
    Abstract: A magnetic sputtering target which contains B and is obtained by a melting and casting method, wherein the B content is 10 at % or more and 50 at % or less, and the remainder is one or more elements selected from Co, Fe, and Ni. Based on the method of the present invention, the sputtering target, in which gaseous impurities are few, there are no cracks and fractures, and segregation of its main constituent elements is minimal, is obtained. Consequently, when sputtered with a magnetron sputtering device comprising a DC power supply, this sputtering target yields a significant effect of being able to inhibit the generation of particles during sputtering, and improve the production yield upon forming thin films.
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: February 23, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Atsutoshi Arakawa
  • Patent number: 9228251
    Abstract: A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: January 5, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Atsushi Sato, Atsutoshi Arakawa
  • Patent number: 9181617
    Abstract: Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 ?m from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 ?m or more and 150 ?m or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: November 10, 2015
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shin-ichi Ogino, Atsushi Sato, Yuichiro Nakamura, Atsutoshi Arakawa
  • Publication number: 20150021175
    Abstract: A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 ?m or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 ?m or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained.
    Type: Application
    Filed: February 15, 2013
    Publication date: January 22, 2015
    Inventors: Atsutoshi Arakawa, Hideo Takami, Yuichiro Nakamura
  • Publication number: 20150014155
    Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least a chromium oxide, wherein the sputtering target contains one or more types of Zr and W in a total amount of 100 wt ppm or more and 15000 wt ppm or less, and has a relative density of 97% or higher. An object of this invention is to provide a ferromagnetic material sputtering target containing chromium oxide with low generation of particles capable of maintaining high density and with uniformly pulverized oxide phase grains.
    Type: Application
    Filed: January 15, 2013
    Publication date: January 15, 2015
    Inventors: Hideo Takami, Atsutoshi Arakawa
  • Publication number: 20140367254
    Abstract: A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.
    Type: Application
    Filed: December 12, 2012
    Publication date: December 18, 2014
    Inventors: Atsushi Sato, Yuki Ikeda, Atsutoshi Arakawa, Hideo Takami, Yuichiro Nakamura
  • Publication number: 20140360870
    Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles.
    Type: Application
    Filed: January 28, 2013
    Publication date: December 11, 2014
    Inventors: Hideo Takami, Atsutoshi Arakawa
  • Patent number: 8758476
    Abstract: Provided are a method of producing mixed powder comprising noble metal powder and oxide powder, wherein powder of ammonium chloride salt of noble metal and oxide powder are mixed, the mixed powder is subsequently roasted, and ammonium chloride is desorbed by the roasting process in order to obtain mixed powder comprising noble metal powder and oxide powder, and mixed powder comprising noble metal powder and oxide powder, wherein chlorine is less than 1000 ppm, nitrogen is less than 1000 ppm, 90% or more of the grain size of the noble metal powder is 20 ?m or less, and 90% or more of the grain size of the oxide powder is 12 ?m or less. Redundant processes in the production of noble metal powder are eliminated, and processes are omitted so that the inclusion of chlorine contained in the royal water and nitrogen responsible for hydrazine reduction reaction is eliminated as much as possible.
    Type: Grant
    Filed: August 18, 2009
    Date of Patent: June 24, 2014
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Atsutoshi Arakawa, Kazuyuki Satoh, Atsushi Sato
  • Patent number: 8679268
    Abstract: A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 ?m or more and 150 ?m or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: March 25, 2014
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shin-ichi Ogino, Atsushi Sato, Yuichiro Nakamura, Atsutoshi Arakawa
  • Publication number: 20140001038
    Abstract: Provided is a nonmagnetic-material-dispersed sputtering target having a metal composition comprising 20 mol % or less of Cr and the balance of Co. The target has a structure including a phase (A) in which a nonmagnetic oxide material is dispersed in the basis metal, and a metal phase (B) containing 40 mol % or more of Co; the area proportion of grains of the nonmagnetic oxide material in the phase (A) is 50% or less; and when a minimum-area rectangle circumscribed to the phase (B) is assumed, the proportion of the circumscribed rectangle having a short side of 2 to 300 ?m is 90% or more of all of the phases (B). The ferromagnetic sputtering target can suppress particle generation during sputtering and can improve leakage magnetic flux to allow stable electrical discharge with a magnetron sputtering apparatus.
    Type: Application
    Filed: April 6, 2012
    Publication date: January 2, 2014
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Shin-ichi Ogino, Atsushi Sato, Atsutoshi Arakawa, Yuichiro Nakamura
  • Publication number: 20130220804
    Abstract: Provided is a ferromagnetic material sputtering target having a metal composition comprising 5 mol % or more of Pt and the balance of Co, wherein the target has a structure including a metal base (A) and a phase (B) of a Co—Pt alloy containing 40 to 76 mol % of Pt in the metal base (A). Further provided is a ferromagnetic material sputtering target having a metal composition comprising 5 mol % or more of Pt, 20 mol % or less of Cr, and the balance of Co, wherein the target has a structure including a metal base (A) and a phase (B) of a Co—Pt alloy containing 40 to 76 mol % of Pt in the metal base (A). The present invention provides a ferromagnetic material sputtering target that can improve the leakage magnetic flux to allow stable discharge with a magnetron sputtering device.
    Type: Application
    Filed: December 6, 2011
    Publication date: August 29, 2013
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Atsutoshi Arakawa, Yuki Ikeda
  • Publication number: 20130213804
    Abstract: Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Pt is contained in an amount of 5 mol % or more, and the remainder is Co, wherein the target includes a base metal (A) and, within the base metal (A), a Co—Pt alloy phase (B) containing 40 to 76 mol % of Pt, and a metal or alloy phase (C), which is different from the phase (B) and is composed of Co or an alloy comprising Co as a main component. The present invention improves the leakage magnetic flux to provide a ferromagnetic material sputtering target that can perform stable discharge with a magnetron sputtering apparatus.
    Type: Application
    Filed: December 15, 2011
    Publication date: August 22, 2013
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Atsutoshi Arakawa, Yuki Ikeda
  • Publication number: 20130206593
    Abstract: Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Ru is contained in an amount of 0.5 mol % or more and 30 mol % or less, and the remainder is Co, wherein the target has a structure including a base metal (A) and, within the base metal (A), a Co—Ru alloy phase (B) containing 35 mol % or more of Ru. The present invention provides a ferromagnetic material sputtering target that can improve leakage magnetic flux to allow stable discharge with a magnetron sputtering apparatus.
    Type: Application
    Filed: December 15, 2011
    Publication date: August 15, 2013
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Atsutoshi Arakawa, Yuki Ikeda
  • Publication number: 20130206592
    Abstract: Provided is a ferromagnetic sputtering target having a metal composition comprising 20 mol % or less of Cr, 5 mol % or more of Pt, and the balance of Co, wherein the target includes a metal base (A) and two different phases (B) and (C) in the metal base (A), the phase (B) being a Co—Ru alloy phase containing 30 mol % or more of Ru, and the phase (C) being a metal or alloy phase primarily composed of Co or a Co alloy. The present invention improves the leakage magnetic flux to provide a ferromagnetic sputtering target that can perform stable discharge with a magnetron sputtering device.
    Type: Application
    Filed: December 19, 2011
    Publication date: August 15, 2013
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Atsutoshi Arakawa, Yuki Ikeda
  • Publication number: 20130112555
    Abstract: Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 ?m from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 ?m or more and 150 ?m or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
    Type: Application
    Filed: January 28, 2011
    Publication date: May 9, 2013
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Shin-ichi Ogino, Atsushi SATO, Yuichiro Nakamura, Atsutoshi Arakawa