Patents by Inventor Atsuya Sasaki
Atsuya Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942490Abstract: A photon counting radiation detector includes a cell structure including a substrate and an epitaxial layer provided on the substrate, radiation being incident on the epitaxial layer; an inclination ? of the substrate being set in a predetermined range, where tsub is a thickness of the substrate, tepi is a thickness of the epitaxial layer, L is a length of the substrate, and the inclination ? is an inclination of the substrate with respect to an incident direction of the radiation. The epitaxial layer is preferably one type selected from SiC, Ga2O3, GaAs, GaN, diamond, and CdTe. Such a photon counting radiation detector is preferably a direct converting type.Type: GrantFiled: February 18, 2021Date of Patent: March 26, 2024Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Kuniyuki Kakushima, Akito Sasaki, Atsuya Sasaki, Hideaki Hirabayashi
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Publication number: 20230411288Abstract: An electronic device includes a substrate, a first silicon nitride film provided on the substrate, a silicon oxide film provided on the first silicon nitride film, a capacitor provided on the silicon oxide film, and an interconnect electrically connected to the capacitor. The interconnect is disposed apart from the first silicon nitride film. In a plan view, an outer perimeter of the silicon oxide film is inside an outer perimeter of the first silicon nitride film.Type: ApplicationFiled: June 6, 2023Publication date: December 21, 2023Inventor: Atsuya SASAKI
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Patent number: 11600866Abstract: A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 ?m and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.Type: GrantFiled: June 11, 2019Date of Patent: March 7, 2023Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Atsuya Sasaki, Akito Sasaki, Yoshinori Kataoka, Hideaki Hirabayashi, Shuichi Saito
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Publication number: 20220130644Abstract: A plasma processing apparatus includes: a chamber including a first member, and a second member detachable from the first member; a conductive member disposed between the first member and the second member; and a first high frequency power supply generating plasma in the chamber. The conductive member includes a resin member made of a resin material, and a metal film covering a surface of the resin member.Type: ApplicationFiled: March 13, 2020Publication date: April 28, 2022Applicants: Noa Leading Co., Ltd., TOSHIBA MATERIALS CO., LTD.Inventors: Masahiro YOKOTA, Akihiko HAPPOYA, Ken TAKAHASHI, Shusuke MORITA, Jiro OSHIMA, Shuichi SAITO, Noriaki YAGI, Atsuya SASAKI
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Publication number: 20220002166Abstract: According to one embodiment, a tungsten oxide powder is provided. The tungsten oxide has an average particle size along a major axis of 10 ?m or less, an average aspect ratio of 10 or less, and 0 to 4 crystal defects per unit area of 9 nm2 on a surface or sectional surface in a direction of a minor axis of a primary particle.Type: ApplicationFiled: September 21, 2021Publication date: January 6, 2022Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Daisuke FUKUSHI, Hideaki HIRABAYASHI, Akito SASAKI, Ryosuke HIRAMATSU, Atsuya SASAKI, Takaki MOROOKA, Yoichiro MORI
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Patent number: 11211529Abstract: A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01?O8nm/O3nm?0.5 is satisfied, where O3nm (at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O8nm (at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.Type: GrantFiled: February 5, 2020Date of Patent: December 28, 2021Assignees: TOSHIBA MATERIALS CO., LTD., MEIJO UNIVERSITYInventors: Ryosuke Hiramatsu, Atsuya Sasaki, Hideaki Hirabayashi, Satoshi Kamiyama
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Patent number: 11211526Abstract: A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.Type: GrantFiled: September 16, 2019Date of Patent: December 28, 2021Assignees: TOSHIBA MATERIALS CO., LTD., MEIJO UNIVERSITYInventors: Satoshi Kamiyama, Atsuya Sasaki, Ryosuke Hiramatsu, Hideaki Hirabayashi
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Publication number: 20210175268Abstract: A photon counting radiation detector includes a cell structure including a substrate and an epitaxial layer provided on the substrate, radiation being incident on the epitaxial layer; an inclination ? of the substrate being set in a predetermined range, where tsub is a thickness of the substrate, tepi is a thickness of the epitaxial layer, L is a length of the substrate, and the inclination ? is an inclination of the substrate with respect to an incident direction of the radiation. The epitaxial layer is preferably one type selected from SiC, Ga2O3, GaAs, GaN, diamond, and CdTe. Such a photon counting radiation detector is preferably a direct converting type.Type: ApplicationFiled: February 18, 2021Publication date: June 10, 2021Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Kuniyuki KAKUSHIMA, Akito SASAKI, Atsuya SASAKI, Hideaki HIRABAYASHI
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Patent number: 10964836Abstract: According to one embodiment, a photon counting-type radiation detector includes a first cell and a second cell. The first cell transmits radiation. The second cell is stacked with the first cell. The second cell absorbs the radiation passing through the first cell.Type: GrantFiled: October 11, 2019Date of Patent: March 30, 2021Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTDInventors: Kuniyuki Kakushima, Tomoyuki Suzuki, Kazuo Tsutsui, Akito Sasaki, Atsuya Sasaki, Hideaki Hirabayashi, Yoshinori Kataoka
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Publication number: 20200176633Abstract: A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01?O8nm/O3nm?0.5 is satisfied, where O3nm (at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O8nm (at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.Type: ApplicationFiled: February 5, 2020Publication date: June 4, 2020Applicants: TOSHIBA MATERIALS CO., LTD., Meijo UniversityInventors: Ryosuke HIRAMATSU, Atsuya SASAKI, Hideaki HIRABAYASHI, Satoshi KAMIYAMA
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Publication number: 20200048107Abstract: According to one embodiment, nano metal compound particles are provided. The nano metal compound particles have an average particle size of 50 nm or less. The nano metal compound particles have a peak ?t of 2.8 eV or less. The peak ?t corresponds to a resonant frequency of an oscillator according to a spectroscopic ellipsometry method fitted to a Lorentz model.Type: ApplicationFiled: October 22, 2019Publication date: February 13, 2020Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Yuzo SHIGESATO, Junjun Jia, Daisuke Fukushi, Hideaki Hirabayashi, Yoshinori Kataoka, Akito Sasaki, Atsuya Sasaki
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Publication number: 20200041663Abstract: According to one embodiment, a photon counting-type radiation detector includes a first cell and a second cell. The first cell transmits radiation. The second cell is stacked with the first cell. The second cell absorbs the radiation passing through the first cell.Type: ApplicationFiled: October 11, 2019Publication date: February 6, 2020Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTDInventors: Kuniyuki KAKUSHIMA, Tomoyuki SUZUKI, Kazuo TSUTSUI, Akito SASAKI, Atsuya SASAKI, Hideaki HIRABAYASHI, Yoshinori KATAOKA
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Publication number: 20200013924Abstract: A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.Type: ApplicationFiled: September 16, 2019Publication date: January 9, 2020Applicants: TOSHIBA MATERIALS CO., LTD., Meijo UniversityInventors: Satoshi KAMIYAMA, Atsuya SASAKI, Ryosuke HIRAMATSU, Hideaki HIRABAYASHI
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Publication number: 20190296401Abstract: A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 ?m and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.Type: ApplicationFiled: June 11, 2019Publication date: September 26, 2019Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Atsuya Sasaki, Akito Sasaki, Yoshinori Kataoka, Hideaki Hirabayashi, Shuichi Saito