Patents by Inventor Augusto Benvenuti
Augusto Benvenuti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240069749Abstract: A memory access operation is initiated to read a set of target memory cells of a target wordline of the memory device. During the memory access operation, a read voltage level is caused to be applied to the target wordline. During the memory access operation, a first pass through voltage level is caused to be applied to a first wordline adjacent to the target wordline. During the memory access operation, a second pass through voltage is caused to be applied to a second wordline adjacent to the target wordline, wherein the first pass through voltage level is less than the second pass through voltage level.Type: ApplicationFiled: August 21, 2023Publication date: February 29, 2024Inventors: Augusto Benvenuti, Giovanni Maria Paolucci, Alessio Urbani, Gianpietro Carnevale, Aurelio Giancarlo Mauri
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Patent number: 11790991Abstract: Some embodiments include apparatuses and methods of operating the apparatuses. One of the apparatuses includes a memory cell string having first, second, third, fourth, and fifth memory cells; access lines including first, second, third, fourth, and fifth access lines coupled to the first, second, third, fourth, and fifth memory cells, respectively, and a module. The first memory cell is between the second and third memory cells. The second memory cell is between the first and fourth memory cells. The third memory cell is between the first and fifth memory cells. The module is to couple the first access line to a ground node at a first time of a memory operation, couple the second and third access lines to the ground node at a second time of the operation after the first time, and couple the fourth and fifth access lines to the ground node at a third time of the operation after the second time.Type: GrantFiled: August 15, 2022Date of Patent: October 17, 2023Assignee: Micron Technology, Inc.Inventors: Albert Fayrushin, Augusto Benvenuti, Akira Goda, Luca Laurin, Haitao Liu
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Patent number: 11715536Abstract: Apparatus might include an array of memory cells comprising a plurality of strings of series-connected memory cells and a controller for access of the array of memory cells, wherein the controller is configured to cause the apparatus to perform a sense operation on a selected memory cell of a string of series-connected memory cells, and to discharge access lines connected to the string of series-connected memory cells in a defined manner following the sense operation.Type: GrantFiled: November 29, 2021Date of Patent: August 1, 2023Assignee: Micron Technology, Inc.Inventors: Daniele Cantarelli, Augusto Benvenuti, Massimo Ernesto Bertuccio
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Patent number: 11616079Abstract: Some embodiments include a pillar which contains semiconductor material, and which extends primarily along a first direction. A cross-section through the pillar along a second direction orthogonal to the first direction is through the semiconductor material and includes a lateral periphery of the pillar configured as three-sided shape. Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. The first levels include conductive structures and the second levels are insulative. Channel-material-pillars extend through the vertical stack. Each of the channel-material-pillars has a top-down cross-section which includes a lateral periphery configured as three-sided shape of an equilateral triangle with rounded vertices.Type: GrantFiled: November 12, 2021Date of Patent: March 28, 2023Assignee: Micron Technology, Inc.Inventors: Albert Fayrushin, Augusto Benvenuti, Haitao Liu, Xin Lan
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Publication number: 20230078036Abstract: Methods of operating a memory, and memory configured to perform similar methods, might include applying a negative first voltage level to a control gate of a transistor connected between a first node and a string of series-connected memory cells, increasing a voltage level applied to the first node at a particular rate while increasing the voltage level applied to the control gate of the transistor at the particular rate, and in response to the voltage level applied to the first node reaching a particular voltage level, ceasing increasing the voltage level applied to the first node and ceasing increasing the voltage level applied to the control gate of the transistor.Type: ApplicationFiled: November 16, 2022Publication date: March 16, 2023Applicant: MICRON TECHNOLOGY, INC.Inventors: Giovanni Maria Paolucci, Paolo Tessariol, Emilio Camerlenghi, Gianpietro Carnevale, Augusto Benvenuti
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Publication number: 20230075673Abstract: A transistor comprises a channel region having a frontside and a backside. A gate is adjacent the frontside of the channel region with a gate insulator being between the gate and the channel region. Insulating material having net negative charge is adjacent the backside of the channel region. The insulating material comprises at least one of AlxFy, HfAlxFy, AlOxNy, and HfAlxOyNz, where “x”, “y”, and “z” are each greater than zero. Other embodiments and aspects are disclosed.Type: ApplicationFiled: November 15, 2022Publication date: March 9, 2023Applicant: Micron Technology, Inc.Inventors: Ramanathan Gandhi, Augusto Benvenuti, Giovanni Maria Paolucci
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Patent number: 11538919Abstract: A transistor comprises a channel region having a frontside and a backside. A gate is adjacent the frontside of the channel region with a gate insulator being between the gate and the channel region. Insulating material having net negative charge is adjacent the backside of the channel region. The insulating material comprises at least one of AlxFy, HfAlxFy, AlOxNy, and HfAlxOyNz, where “x”, “y”, and “z” are each greater than zero. Other embodiments and aspects are disclosed.Type: GrantFiled: February 23, 2021Date of Patent: December 27, 2022Assignee: Micron Technology, Inc.Inventors: Ramanathan Gandhi, Augusto Benvenuti, Giovanni Maria Paolucci
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Publication number: 20220392533Abstract: Some embodiments include apparatuses and methods of operating the apparatuses. One of the apparatuses includes a memory cell string having first, second, third, fourth, and fifth memory cells; access lines including first, second, third, fourth, and fifth access lines coupled to the first, second, third, fourth, and fifth memory cells, respectively, and a module. The first memory cell is between the second and third memory cells. The second memory cell is between the first and fourth memory cells. The third memory cell is between the first and fifth memory cells. The module is to couple the first access line to a ground node at a first time of a memory operation, couple the second and third access lines to the ground node at a second time of the operation after the first time, and couple the fourth and fifth access lines to the ground node at a third time of the operation after the second time.Type: ApplicationFiled: August 15, 2022Publication date: December 8, 2022Inventors: Albert Fayrushin, Augusto Benvenuti, Akira Goda, Luca Laurin, Haitao Liu
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Patent number: 11514987Abstract: Methods of operating a memory, and memory configured to perform similar methods, might include applying a positive first voltage level to a first node selectively connected to a string of series-connected memory cells while applying a negative second voltage level to a control gate of a transistor connected between the first node and the string of series-connected memory cells, and increasing the voltage level applied to the first node to a third voltage level while increasing the voltage level applied to the control gate of the transistor to a fourth voltage level lower than the third voltage level and higher than the first voltage level.Type: GrantFiled: April 13, 2021Date of Patent: November 29, 2022Assignee: Micron Technology, Inc.Inventors: Giovanni Maria Paolucci, Paolo Tessariol, Emilio Camerlenghi, Gianpietro Carnevale, Augusto Benvenuti
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Publication number: 20220271127Abstract: A transistor comprises a channel region having a frontside and a backside. The channel region comprises a frontside channel material at the frontside and a backside channel material at the backside. A gate is adjacent the frontside of the channel region, with a gate insulator being between the gate and the channel region. The frontside channel material has total n-type dopant therein of greater than 1×1018 atoms/cm3 to no greater than 1×1020 atoms/cm3. The backside channel material has total n-type dopant therein of 0 atoms/cm3 to 1×1018 atoms/cm3. Other embodiments and aspects are disclosed.Type: ApplicationFiled: February 23, 2021Publication date: August 25, 2022Applicant: Micron Technology, Inc.Inventors: Ramanathan Gandhi, Augusto Benvenuti, Giovanni Maria Paolucci
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Publication number: 20220271142Abstract: A transistor comprises a channel region having a frontside and a backside. A gate is adjacent the frontside of the channel region with a gate insulator being between the gate and the channel region. Insulating material having net negative charge is adjacent the backside of the channel region. The insulating material comprises at least one of AlxFy, HfAlxFy, AlOxNy, and HfAlxOyNz, where “x”, “y”, and “z” are each greater than zero. Other embodiments and aspects are disclosed.Type: ApplicationFiled: February 23, 2021Publication date: August 25, 2022Applicant: Micron Technology, Inc.Inventors: Ramanathan Gandhi, Augusto Benvenuti, Giovanni Maria Paolucci
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Patent number: 11417396Abstract: Some embodiments include apparatuses and methods of operating the apparatuses. One of the apparatuses includes a memory cell string having first, second, third, fourth, and fifth memory cells; access lines including first, second, third, fourth, and fifth access lines coupled to the first, second, third, fourth, and fifth memory cells, respectively, and a module. The first memory cell is between the second and third memory cells. The second memory cell is between the first and fourth memory cells. The third memory cell is between the first and fifth memory cells. The module is to couple the first access line to a ground node at a first time of a memory operation, couple the second and third access lines to the ground node at a second time of the operation after the first time, and couple the fourth and fifth access lines to the ground node at a third time of the operation after the second time.Type: GrantFiled: October 9, 2020Date of Patent: August 16, 2022Assignee: Micron Technology, Inc.Inventors: Albert Fayrushin, Augusto Benvenuti, Akira Goda, Luca Laurin, Haitao Liu
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Publication number: 20220084610Abstract: Apparatus might include an array of memory cells comprising a plurality of strings of series-connected memory cells and a controller for access of the array of memory cells, wherein the controller is configured to cause the apparatus to perform a sense operation on a selected memory cell of a string of series-connected memory cells, and to discharge access lines connected to the string of series-connected memory cells in a defined manner following the sense operation.Type: ApplicationFiled: November 29, 2021Publication date: March 17, 2022Applicant: MICRON TECHNOLOGY, INC.Inventors: Daniele Cantarelli, Augusto Benvenuti, Massimo Ernesto Bertuccio
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Publication number: 20220068969Abstract: Some embodiments include a pillar which contains semiconductor material, and which extends primarily along a rust direction. A cross-section through the pillar along a second direction orthogonal to the first direction is through the semiconductor material and includes a lateral periphery of the pillar configured as three-sided shape. Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. The first levels include conductive structures and the second levels ae insulative. Channel-material-pillars extend through the vertical stack. Each of the channel-material-pillars has a top-down cross-section which includes a lateral periphery configured as three-sided shape of an equilateral triangle with rounded vertices.Type: ApplicationFiled: November 12, 2021Publication date: March 3, 2022Applicant: Micron Technology, Inc.Inventors: Albert Fayrushin, Augusto Benvenuti, Haitao Liu, Xin Lan
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Patent number: 11200958Abstract: Memories might include an array of memory cells comprising a plurality of strings of series-connected memory cells and a controller for access of the array of memory cells, wherein the controller is configured to perform a sense operation on a particular memory cell of a string of series-connected memory cells, discharge the access line for a second memory cell of the string of series-connected memory cells to a first voltage level and discharge the access line for the particular memory cell to a second voltage level higher than the first voltage level after completion of the sense operation, and discharge the access line for a third memory cell of the string of series-connected memory cells to a third voltage level lower than the second voltage level and higher than the first voltage level after initiating the discharge of the access line for the particular memory cell.Type: GrantFiled: November 6, 2020Date of Patent: December 14, 2021Assignee: Micron Technology, Inc.Inventors: Daniele Cantarelli, Augusto Benvenuti, Massimo Ernesto Bertuccio
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Patent number: 11201167Abstract: Some embodiments include a pillar which contains semiconductor material, and which extends primarily along a first direction. A cross-section through the pillar along a second direction orthogonal to the first direction is through the semiconductor material and includes a lateral periphery of the pillar configured as three-sided shape. Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. The first levels include conductive structures and the second levels are insulative. Channel-material-pillars extend through the vertical stack. Each of the channel-material-pillars has a top-down cross-section which includes a lateral periphery configured as three-sided shape of an equilateral triangle with rounded vertices.Type: GrantFiled: December 5, 2019Date of Patent: December 14, 2021Assignee: Micron Technology, Inc.Inventors: Albert Fayrushin, Augusto Benvenuti, Haitao Liu, Xin Lan
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Publication number: 20210233591Abstract: Methods of operating a memory, and memory configured to perform similar methods, might include applying a positive first voltage level to a first node selectively connected to a string of series-connected memory cells while applying a negative second voltage level to a control gate of a transistor connected between the first node and the string of series-connected memory cells, and increasing the voltage level applied to the first node to a third voltage level while increasing the voltage level applied to the control gate of the transistor to a fourth voltage level lower than the third voltage level and higher than the first voltage level.Type: ApplicationFiled: April 13, 2021Publication date: July 29, 2021Applicant: MICRON TECHNOLOGY, INC.Inventors: Giovanni Maria Paolucci, Paolo Tessariol, Emilio Camerlenghi, Gianpietro Carnevale, Augusto Benvenuti
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Publication number: 20210175246Abstract: Some embodiments include a pillar which contains semiconductor material, and which extends primarily along a first direction. A cross-section through the pillar along a second direction orthogonal to the first direction is through the semiconductor material and includes a lateral periphery of the pillar configured as three-sided shape. Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. The first levels include conductive structures and the second levels are insulative. Channel-material-pillars extend through the vertical stack. Each of the channel-material-pillars has a top-down cross-section which includes a lateral periphery configured as three-sided shape of an equilateral triangle with rounded vertices.Type: ApplicationFiled: December 5, 2019Publication date: June 10, 2021Applicant: Micron Technology, Inc.Inventors: Albert Fayrushin, Augusto Benvenuti, Haitao Liu, Xin Lan
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Patent number: 11011236Abstract: Methods of operating a memory, and memory configured to perform similar methods, might include applying a positive first voltage level to a first node selectively connected to a string of series-connected memory cells while applying a negative second voltage level to a control gate of a transistor connected between the first node and the string of series-connected memory cells, and increasing the voltage level applied to the first node to a third voltage level while increasing the voltage level applied to the control gate of the transistor to a fourth voltage level lower than the third voltage level and higher than the first voltage level.Type: GrantFiled: August 29, 2019Date of Patent: May 18, 2021Assignee: Micron Technology, Inc.Inventors: Giovanni Maria Paolucci, Paolo Tessariol, Emilio Camerlenghi, Gianpietro Carnevale, Augusto Benvenuti
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Publication number: 20210065827Abstract: Memories might include an array of memory cells comprising a plurality of strings of series-connected memory cells and a controller for access of the array of memory cells, wherein the controller is configured to perform a sense operation on a particular memory cell of a string of series-connected memory cells, discharge the access line for a second memory cell of the string of series-connected memory cells to a first voltage level and discharge the access line for the particular memory cell to a second voltage level higher than the first voltage level after completion of the sense operation, and discharge the access line for a third memory cell of the string of series-connected memory cells to a third voltage level lower than the second voltage level and higher than the first voltage level after initiating the discharge of the access line for the particular memory cell.Type: ApplicationFiled: November 6, 2020Publication date: March 4, 2021Applicant: MICRON TECHNOLOGY, INC.Inventors: Daniele Cantarelli, Augusto Benvenuti, Massimo Ernesto Bertuccio