Abstract: In some embodiments, the present disclosure relates to a transistor device. The transistor device that includes a source contact disposed over a substrate. The source contact has a first side and an opposing second side disposed between a first end and an opposing second end. A drain contact is disposed over the substrate and is separated from the source contact along a first direction. A gate structure is disposed over the substrate between the source contact and the drain contact. The gate structure extends along the first side of the source contact facing the drain contact and also wraps around the first end and the opposing second end of the source contact.

Abstract: The present disclosure relates to a transistor device. The transistor device includes a plurality of source contacts disposed over a substrate. A plurality of gate structures are disposed over the substrate. The plurality of gate structures wrap around one or more of the plurality of source contacts in one or more closed loops. A drain contact is disposed over the substrate. The drain contact continuously wraps around one or more of the plurality of gate structures as a continuous structure. The plurality of gate structures are separated from the drain contact by a first distance and are separated from a source contact of the plurality of source contacts by a second distance. The second distance is different than the first distance.

Abstract: The present disclosure relates to a transistor device. The transistor device includes a plurality of first source/drain contacts disposed over a substrate. A plurality of gate structures are disposed over the substrate between the plurality of first source/drain contacts. The plurality of gate structures wrap around the plurality of first source/drain contacts in a plurality of closed loops. A second source/drain contact is disposed over the substrate between the plurality of gate structures. The second source/drain contact continuously wraps around the plurality of gate structures as a continuous structure.

Abstract: A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.

Abstract: In some embodiments, the present disclosure relates to a method of forming a transistor device. The method includes forming a source contact over a substrate, forming a drain contact over the substrate, and forming a gate contact material over the substrate. The gate contact material is patterned to define a gate structure that wraps around the source contact along a continuous and unbroken path.

Abstract: The present disclosure relates to a transistor device. The transistor device includes a plurality of first source/drain contacts disposed over a substrate. A plurality of gate structures are disposed over the substrate between the plurality of first source/drain contacts. The plurality of gate structures wrap around the plurality of first source/drain contacts in a plurality of closed loops. A second source/drain contact is disposed over the substrate between the plurality of gate structures. The second source/drain contact continuously wraps around the plurality of gate structures as a continuous structure.

Abstract: A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.

Abstract: In some embodiments, the present disclosure relates to a transistor device. The transistor device that includes a source contact disposed over a substrate. The source contact has a first side and an opposing second side disposed between a first end and an opposing second end. A drain contact is disposed over the substrate and is separated from the source contact along a first direction. A gate structure is disposed over the substrate between the source contact and the drain contact. The gate structure extends along the first side of the source contact facing the drain contact and also wraps around the first end and the opposing second end of the source contact.

Abstract: A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.

Abstract: A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.

Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.

Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.

Abstract: A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.

Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.