Abstract: Provided in accordance with the herein described exemplary embodiments are piezo micro-machined ultrasonic transducers (pMUTs) each having a first electrode that includes a first electrode portion and a second electrode portion. The second electrode portion is separately operable from the first electrode portion. A second electrode is spaced apart from the first electrode and defines a space between the first electrode and the second electrode. A piezoelectric material is disposed in the space. Also provided are arrays of pMUTs wherein individual pMUTs have first electrode portions operably associated with array rows and second electrode portions operably associated with array columns.

Abstract: Micro-Electro-Mechanical System (MEMS) devices for harvesting sound energy and methods for fabricating MEMS devices for harvesting sound energy are provided. In an embodiment, a method for fabricating a MEMS device for harvesting sound energy includes forming a pressure sensitive MEMS structure disposed over a semiconductor substrate and including a suspended structure in a cavity. Further, the method includes etching the semiconductor substrate to form an acoustic port through the semiconductor substrate configured to allow acoustic pressure to deflect the suspended structure.

Abstract: Three-axis monolithic microelectromechanical system (MEMS) accelerometers and methods for fabricating integrated capacitive and piezo accelerometers are provided. In an embodiment, a three-axis MEMS accelerometer includes a first sensing structure for sensing acceleration in a first direction. Further, the three-axis MEMS accelerometer includes a second sensing structure for sensing acceleration in a second direction perpendicular to the first direction. Also, the three-axis MEMS accelerometer includes a third sensing structure for sensing acceleration in a third direction perpendicular to the first direction and perpendicular to the second direction. At least one sensing structure is a capacitive structure and at least one sensing structure is a piezo structure.

Abstract: An ultrasonic transducer and a method for a transmitting an acoustic wave using an ultrasonic transducer comprising a membrane; two or more patterned top electrodes; a pMUT array, wherein the patterned top electrode is arranged as row pin selector and column selector in an N×N array; the pMUT array having N+N electrical contacts; a single unpatterned bottom electrode; a row and column where the electrode is at equal or opposite polarities; and a AC driving voltage is applied to top electrodes with a phase difference of zero or is applied to one electrode to transmit the ultrasonic wave.

Abstract: Micro-Electro-Mechanical System (MEMS) devices for harvesting sound energy and methods for fabricating MEMS devices for harvesting sound energy are provided. In an embodiment, a method for fabricating a MEMS device for harvesting sound energy includes forming a pressure sensitive MEMS structure disposed over a semiconductor substrate and including a suspended structure in a cavity. Further, the method includes etching the semiconductor substrate to form an acoustic port through the semiconductor substrate configured to allow acoustic pressure to deflect the suspended structure.

Abstract: Provided in accordance with the herein described exemplary embodiments are piezo micro-machined ultrasonic transducers (pMUTs) each having a first electrode that includes a first electrode portion and a second electrode portion. The second electrode portion is separately operable from the first electrode portion. A second electrode is spaced apart from the first electrode and defines a space between the first electrode and the second electrode. A piezoelectric material is disposed in the space. Also provided are arrays of pMUTs wherein individual pMUTs have first electrode portions operably associated with array rows and second electrode portions operably associated with array columns.

Abstract: Three-axis monolithic microelectromechanical system (MEMS) accelerometers and methods for fabricating integrated capacitive and piezo accelerometers are provided. In an embodiment, a three-axis MEMS accelerometer includes a first sensing structure for sensing acceleration in a first direction. Further, the three-axis MEMS accelerometer includes a second sensing structure for sensing acceleration in a second direction perpendicular to the first direction. Also, the three-axis MEMS accelerometer includes a third sensing structure for sensing acceleration in a third direction perpendicular to the first direction and perpendicular to the second direction. At least one sensing structure is a capacitive structure and at least one sensing structure is a piezo structure.

Abstract: Integrated MEMS-CMOS devices and integrated circuits with MEMS devices and CMOS devices are provided. An exemplary integrated MEMS-CMOS device is vertically integrated and includes a substrate having a first side and a second side opposite the first side. Further, the exemplary vertically integrated MEMS-CMOS device includes a CMOS device located in and/or over the first side of the substrate. Also, the exemplary vertically integrated MEMS-CMOS device includes a MEMS device located in and/or under the second side of the substrate.

Abstract: Integrated MEMS devices for pressure sensing and inertial sensing, methods for fabricating such integrated devices, and methods for fabricating vertically integrated MEMS pressure sensor/inertial sensor devices are provided. In an example, a method for fabricating an integrated device for pressure and inertial sensing includes forming a MEMS pressure sensor on a first side of a semiconductor substrate. The method further includes forming a MEMS inertial sensor on a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.

Abstract: Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices are provided. An exemplary method for fabricating a MEMS device and a CMOS device includes forming the CMOS device in and/or over a first side of a semiconductor substrate. Further, the method includes forming the MEMS device in and/or under a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.