Patents by Inventor Avgerinos V. Gelatos

Avgerinos V. Gelatos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10269633
    Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: April 23, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bhushan N. Zope, Avgerinos V. Gelatos, Bo Zheng, Yu Lei, Xinyu Fu, Srinivas Gandikota, Sang-Ho Yu, Mathew Abraham
  • Patent number: 10256076
    Abstract: Methods of etching include cycles of low temperature etching of a material layer disposed on a substrate, with at least one of the cycles being followed by activation of unreacted etchant deposits during an inert gas plasma treatment. In some embodiments, a method includes: positioning a substrate in a processing chamber; generating, in a first etching cycle, a plasma from a gas mixture within the processing chamber to form a processing gas including an etchant; exposing, to the etchant, a portion of a material layer disposed on a substrate maintained at a first temperature; generating an inert gas plasma within the processing chamber; generating, in a second etching cycle, a plasma from a gas mixture within the processing chamber to form a processing gas including an etchant; and heating the substrate to a second temperature to sublimate a byproduct of reaction between the etchant and the material layer.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: April 9, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shi Wei Toh, Avgerinos V. Gelatos, Vikash Banthia
  • Publication number: 20190078210
    Abstract: Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.
    Type: Application
    Filed: September 12, 2017
    Publication date: March 14, 2019
    Inventors: FARUK GUNGOR, DIEN-YEH WU, JOEL M. HUSTON, MEI CHANG, XIAOXIONG YUAN, KAZUYA DAITO, AVGERINOS V. GELATOS, TAKASHI KURATOMI, YU CHANG, BIN CAO
  • Patent number: 10199230
    Abstract: Methods for selectively depositing a metal silicide layer are provided herein.
    Type: Grant
    Filed: July 2, 2015
    Date of Patent: February 5, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Seshadri Ganguli, Yixiong Yang, Bhushan N. Zope, Xinyu Fu, Avgerinos V. Gelatos, Guoqiang Jian, Bo Zheng
  • Publication number: 20190019684
    Abstract: A method for forming a film on a substrate in a semiconductor process chamber includes forming a first layer on the substrate using a plasma enhanced process and a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas. The process chamber is then purged and the first layer is thermally soaked with a hydrogen-based precursor gas. The process chamber is then purged again and the process may be repeated with or without the plasma enhanced process until a certain film thickness is achieved on the substrate.
    Type: Application
    Filed: July 6, 2018
    Publication date: January 17, 2019
    Inventors: Yi Xu, Takashi Kuratomi, Avgerinos V. Gelatos, Vikash Banthia, Mei Chang, Kazuya Daito
  • Patent number: 10163656
    Abstract: Embodiments of methods for etching cobalt metal using fluorine radicals are provided herein. In some embodiments, a method of etching a cobalt layer in a substrate processing chamber includes: forming a plasma from a process gas comprising a fluorine-containing gas; and exposing the cobalt layer to fluorine radicals from the plasma while maintaining the cobalt layer at a temperature of about 50 to about 500 degrees Celsius to etch the cobalt layer.
    Type: Grant
    Filed: October 22, 2014
    Date of Patent: December 25, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bhushan N. Zope, Avgerinos V. Gelatos
  • Patent number: 10163630
    Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: December 25, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bo Zheng, Avgerinos V. Gelatos, Anshul Vyas, Raymond Hoiman Hung
  • Patent number: 10043709
    Abstract: Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: August 7, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hua Ai, Jiang Lu, Avgerinos V. Gelatos, Paul F. Ma, Sang Ho Yu, Feng Q. Liu, Xinyu Fu, Weifeng Ye
  • Patent number: 10008388
    Abstract: The present disclosure generally relates to methods of removing oxides and oxide-containing layers from the surfaces of substrates. In one aspect, a method of processing a substrate comprises positioning a substrate in a process chamber, the substrate having an oxide layer thereon; introducing one or more process gases to an interior of the process chamber; ionizing the one or more process gases; exposing the oxide layer to the one or more ionized process gases, wherein the process chamber is maintained at a pressure less than about 50 mTorr during the exposing, and the substrate is maintained at a temperature within a range of about zero degrees Celsius to about 30 degrees Celsius during the exposing; and removing the oxide layer from the surface of the substrate.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: June 26, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ping Han Hsieh, Teng-fang Kuo, Shi Wei Toh, Avgerinos V. Gelatos
  • Publication number: 20180158686
    Abstract: Methods to selectively deposit titanium-containing films on silicon-containing surfaces in high aspect ratio features of substrates comprise plasma-enhanced chemical vapor deposition (PECVD) process at a plasma powers in the range of about 1 to less than about 700 mWatts/cm2 and frequencies in the range of about 10 kHz to about 50 MHz. The titanium films may be selectively deposited with a selectivity in the range of at least about 1.3:1 metallic silicon surfaces relative to silicon dioxide surfaces.
    Type: Application
    Filed: November 17, 2017
    Publication date: June 7, 2018
    Inventors: Avgerinos V. Gelatos, Takashi Kuratomi, Hyuck Lim, I-Cheng Chen, Mei Chang
  • Patent number: 9966275
    Abstract: Methods for reducing oxygen content in an oxidized annealed metal nitride film comprising exposing the film to a plasma.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: May 8, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Brent Biggs, Avgerinos V. Gelatos, Takashi Kuratomi, Mark H. Lee
  • Publication number: 20180122647
    Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.
    Type: Application
    Filed: November 2, 2017
    Publication date: May 3, 2018
    Inventors: Takashi Kuratomi, Avgerinos V. Gelatos, I-Cheng Chen, Faruk Gungor
  • Publication number: 20180068890
    Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
    Type: Application
    Filed: November 13, 2017
    Publication date: March 8, 2018
    Inventors: Bhushan N. ZOPE, Avgerinos V. GELATOS, Bo ZHENG, Yu LEI, Xinyu FU, Srinivas GANDIKOTA, Sang-Ho YU, Mathew ABRAHAM
  • Publication number: 20170365468
    Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
    Type: Application
    Filed: August 11, 2017
    Publication date: December 21, 2017
    Inventors: Bo ZHENG, Avgerinos V. GELATOS, Anshul VYAS, Raymond Hoiman HUNG
  • Patent number: 9842769
    Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
    Type: Grant
    Filed: May 3, 2016
    Date of Patent: December 12, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bhushan N. Zope, Avgerinos V. Gelatos, Bo Zheng, Yu Lei, Xinyu Fu, Srinivas Gandikota, Sang-ho Yu, Mathew Abraham
  • Publication number: 20170301556
    Abstract: The present disclosure generally relates to methods of removing oxides and oxide-containing layers from the surfaces of substrates. In one aspect, a method of processing a substrate comprises positioning a substrate in a process chamber, the substrate having an oxide layer thereon; introducing one or more process gases to an interior of the process chamber; ionizing the one or more process gases; exposing the oxide layer to the one or more ionized process gases, wherein the process chamber is maintained at a pressure less than about 50 mTorr during the exposing, and the substrate is maintained at a temperature within a range of about zero degrees Celsius to about 30 degrees Celsius during the exposing; and removing the oxide layer from the surface of the substrate.
    Type: Application
    Filed: January 24, 2017
    Publication date: October 19, 2017
    Inventors: Ping Han HSIEH, Teng-fang KUO, Shi Wei TOH, Avgerinos V. GELATOS
  • Patent number: 9783889
    Abstract: In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: October 10, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Gwo-Chuan Tzu, Xiaoxiong Yuan, Amit Khandelwal, Avgerinos V. Gelatos, Olkan Cuvalci, Kai Wu, Michael P. Karazim
  • Patent number: 9735009
    Abstract: The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: August 15, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bo Zheng, Avgerinos V. Gelatos, Anshul Vyas, Raymond Hoiman Hung
  • Publication number: 20170194156
    Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
    Type: Application
    Filed: March 17, 2017
    Publication date: July 6, 2017
    Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
  • Publication number: 20170178927
    Abstract: Methods for reducing oxygen content in an oxidized annealed metal nitride film comprising exposing the film to a plasma.
    Type: Application
    Filed: December 16, 2016
    Publication date: June 22, 2017
    Inventors: Brent Biggs, Avgerinos V. Gelatos, Takashi Kuratomi, Mark H. Lee