Publication number: 20230287022
Abstract: Methods for depositing a film using a non-halide oxygen-free organometallic precursors are disclosed. The method includes forming the film on a substrate surface by exposing the surface to the precursor and a reducing agent, the precursor has a general formula (1): M-L1L2, wherein M is a metal, L1 is a first aromatic ligand having a hapticity selected from ?3, ?5, or ?6, L2 is a ligand having a hapticity selected from of ?3, ?4, ?5, ?6, ?7, ?8, ?9 or ?10. The first aromatic ligand, L1, may include a structure according to formula (II) wherein each of R1, R2, R3, R4, R5 and R6 is independently selected from a group consisting of H, methyl, ethyl, n-propyl, isopropyl, n-butyl and iso-butyl. The ligand, L2, can be independently selected from a group consisting of hexa-1,3,5-triene, 2-methylene-1,3-propanediyl, 1,2-diethenylcyclohex-1-ene, cyclooctatetraene, cyclooctatetraenide anion, styrene, o-quinodimethane, phenyl thiocyanate, phenyl isothiocyanate, (3-methylphenyl)-methylene and derivatives thereof.
Type:
Application
Filed:
March 14, 2022
Publication date:
September 14, 2023
Applicant:
Applied Materials, Inc.
Inventors:
Byunghoon Yoon, Yuri Vladimirovich Barsukov, Avgerinos V. Gelatos, Joung Joo Lee