Abstract: An integrable, non-reciprocal optical component, with guidance, between two magneto-plasmonic interfaces each formed between a dielectric and a metal. An optical port and an input signal passes through a selection region providing a selected signal whose energy is concentrated in a single plasmonic mode, LRSPP or SRSPP, by a selection aperture of a width for which these modes have optical impedances that differ significantly from each other, one of which (z1eff) is close to, or equal to, the input optical impedance (z0eff). The selected signal passes through a differentiation region, which enhances the asymmetry between the two magneto-plasmonic interfaces, to concentrate its energy on a single magneto-plasmonic interface. The differentiated signal passes through a non-reciprocal treatment region formed by two magneto-plasmonic interfaces of non-equivalent geometries. The input signal will thus undergo different treatment from a reverse signal.

Abstract: A dust-proof covering element is provided to close a projection aperture located in the dashboard of a vehicle and through which the information-carrying source light beam projected by the projecting module of a head-up display device passes on its way to a partially reflective return element. The covering element comprises a transparent carrier and an optical coating placed on one of the faces of the carrier; wherein, the optical coating comprises a metal layer with plasmonic properties, said metal layer being endowed with an array of subwavelength nanoperforations, and being configured to allow the extraordinary transmission of one or more restricted bands of wavelengths of the visible spectrum that are centered on the one or more wavelengths of the light beam projected by the projecting module.

Abstract: A stabilised gain semiconductor optical amplifier (CG-SOA) includes and active waveguide (1) comprising an amplification medium (2), extending in longitudinal (Z), lateral (X) and vertical (Y) directions, and coupled to a laser oscillation structure comprising at least two resonant cavities (13, 14) extending in first (D1) and second (D2) directions which are different from the longitudinal direction (Z) of the active waveguide (1) and arranged in such a way as to permit the establishment of laser oscillations having at least two different relaxation oscillation frequencies.

Abstract: The field of the invention is that of optoelectronic components with a buried stripe structure. The optoelectronic device according to the invention is a stripe structure, comprising at least one buried waveguide and a layer called a grating layer in the form of an elongate stripe comprising features, each feature having an approximately rectangular shape, the length of the feature being substantially perpendicular to the direction of the length of the stripe of the grating layer, the layer being placed so as to provide optical coupling with an optical wave propagating in the waveguide, the length of certain features being substantially less than the width of the waveguide.

Abstract: The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called absorption isolators whose complex index is non-reciprocal and depends on the direction of propagation of the light. Generally, integrated optical isolators of this type fulfill two functions. On the one hand, they comprise a magneto-optical layer ensuring the non-reciprocal effect and on the other hand an active zone ensuring the amplification of the laser beam, the injection of the charge carriers into the active zone being ensured by an electrical contact layer.

Abstract: The field of the invention is that of optoelectronic components with a buried stripe structure. The optoelectronic device according to the invention is a stripe structure, comprising at least one buried waveguide and a layer called a grating layer in the form of an elongate stripe comprising features, each feature having an approximately rectangular shape, the length of the feature being substantially perpendicular to the direction of the length of the stripe of the grating layer, said layer being placed so as to provide optical coupling with an optical wave propagating in the waveguide, the length of certain features being substantially less than the width of the waveguide.

Abstract: The field of the invention is that of the semiconductor optical devices used in particular for fibre-optic telecommunications. To function efficiently, a certain number of semiconductor devices require the use of light polarized in a given polarization state. When knowledge of the polarization the state is lost, the optical element according to the invention makes it possible to polarize the light again in a known polarization state. By using two of these elements in combination with a coupler, it is possible to produce a device which fulfils the same function as a polarization splitter. This optical assembly delivers two output signals whose polarization states are the projections of the initial polarization onto two orthogonal axes. The main advantage of these devices is that they are produced using polarization rotators based on photonic crystals, and they can consequently be integrated easily into semiconductor devices, which the use of discrete polarizers does not allow.

Abstract: The field of the invention is that of semiconductor devices used for the amplification or for the phase modulation of optical signals. These devices are known by the generic names SOA (semiconductor optical amplifier) and DPSK (differential phase shift keying) modulators. The main drawbacks of this type of device are that it is, on the one hand, difficult to obtain a constant gain, and, on the other hand, it is difficult for the optical signal to be independently amplitude-modulated and phase-modulated. The device according to the invention does not have these drawbacks.

Abstract: The field of the invention is that of the semiconductor optical devices used in particular for fibre-optic telecommunications. To function efficiently, a certain number of semiconductor devices require the use of light polarized in a given polarization state. When knowledge of the polarization the state is lost, the optical element according to the invention makes it possible to polarize the light again in a known polarization state. By using two of these elements in combination with a coupler, it is possible to produce a device which fulfils the same function as a polarization splitter. This optical assembly delivers two output signals whose polarization states are the projections of the initial polarization onto two orthogonal axes. The main advantage of these devices is that they are produced using polarization rotators based on photonic crystals, and they can consequently be integrated easily into semiconductor devices, which the use of discrete polarizers does not allow.

Abstract: The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called absorption isolators whose complex index is non-reciprocal and depends on the direction of propagation of the light. Generally, integrated optical isolators of this type fulfill two functions. On the one hand, they comprise a magneto-optical layer ensuring the non-reciprocal effect and on the other hand an active zone ensuring the amplification of the laser beam, the injection of the charge carriers into the active zone being ensured by an electrical contact layer.

Abstract: A stabilised gain semiconductor optical amplifier (CG-SOA) includes and active waveguide (1) comprising an amplification medium (2), extending in longitudinal (Z), lateral (X) and vertical (Y) directions, and coupled to a laser oscillation structure comprising at least two resonant cavities (13, 14) extending in first (D1) and second (D2) directions which are different from the longitudinal direction (Z) of the active waveguide (1) and arranged in such a way as to permit the establishment of laser oscillations having at least two different relaxation oscillation frequencies.

Abstract: To format a power modulated input optical signal, at the same time as improving its power dynamic range and the extinction rate of the output signal, a device for formatting binary optical signals includes a first stage for supplying a modulating signal having stabilized high levels as a function of the input signal and an interferometer structure second stage receiving the modulating signal and a probe wave power modulated in phase opposition to the modulation of the modulating signal. The low and high levels of the probe wave are stabilized. Applications include optical transmission.

Abstract: An active structure in the semiconductor die of an amplifier or converter includes a plurality of stacked active layers with different compositions. The different compositions lead to a spectral offset between the respective gain bands of the layers which widens the gain band of the amplifier or the optical bandwidth of the converter. Applications include fiber optic telecommunication networks.

Abstract: The invention relates to an optical component based on semi-conductor optical amplifiers in which the number of independent electrodes is reduced. The component has different regions (1, 2, 3, 4, 5) with the same vertical structure wherein an active waveguide (20) is buried between the upper and lower buffer layers. These regions each have lower and upper electrodes (10, E2, E4) for the purpose of injecting into them equal or different values of current density. This component is characterized in that at least one (10) of the said electrodes covers a number of regions (1, 3, 5) and has distributed resistivity which is adjusted depending on the region under consideration.

Abstract: To increase its saturation threshold very strongly without degrading its gain, whilst remaining compatible with any semiconductor amplifier structure or technology, a semiconductor optical amplifier includes an input coupler having an input port and g output ports and an output coupler having g input ports and one output port. The q output ports of the input coupler are respectively connected to the q input ports of the output coupler by q semiconductor optical amplifiers having the same amplification characteristics. Applications include transmission of optical signals and to producing "all optical" switching devices.

Abstract: To form an integrated optical component comprising a thick waveguide coupled to a thin waveguide, the method consists in:depositing a first guiding layer of said thick waveguide on a substrate;locally etching said first guiding layer over a portion allocated both to a coupling interface and to the thin waveguide;depositing a second guiding layer on the first guiding layer and on the locally etched portion so as to form said thick waveguide in a manner such that it has a maximum thickness in a first zone, a graded-thickness section in a second zone, and a reduced-thickness section in a third zone;locally etching the second guiding layer over a portion of the third zone, said portion being allocated to the thin waveguide; anddepositing a third guiding layer in said portion of said third zone so as to form said thin waveguide.

Abstract: An integrated interferometer structure, in particular for optical signal wavelength converters, includes a first branch and a second branch including at least a first semiconductor optical amplifier coupled to input and/or output peripheral semiconductor optical amplifiers. The structure includes an attenuation section between the output of at least one amplifier of one branch and the input of the output peripheral amplifier and/or the length of the waveguide of at least one peripheral amplifier is less than 300 .mu.m. Applications in telecommunications, in particular for routing signals.

Abstract: The invention relates to wavelength converters for optical signals, as used in telecommunications, in particular for routing signals. The invention relates in particular to a wavelength converter including an interferometer structure for delivering an output optical signal, in which converter first and second branches, including at least one first semiconductor optical amplifier, are coupled to input peripheral semiconductor optical amplifiers and/or to an output peripheral semiconductor optical amplifier, wherein the structure of the active waveguide of at least one peripheral amplifier is so designed that it has a ratio of active area to confinement factor greater than that of the active waveguide of said first amplifier.