Patents by Inventor Badhise Ben Bakir

Badhise Ben Bakir has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220140219
    Abstract: A light Emitting Diode includes a lower layer, an upper layer and between them an emissive structure suitable to emit a light radiation when an electric current passes through it. The upper layer is delimited by an upper surface, through which a portion at least of the light radiation exits. The lower layer is delimited by a lower surface for injecting electric charges. The upper surface forms a non-planar three-dimensional structure with hollow patterns and is covered by a contact structure made of one or several electrically-conductive materials, which extends against the surface, conforming to this non-planar surface.
    Type: Application
    Filed: October 26, 2021
    Publication date: May 5, 2022
    Inventors: Dominique NOGUET, Badhise BEN BAKIR
  • Publication number: 20210391497
    Abstract: An optoelectronic light emitting device includes a light emitting diode configured to emit a first radiation, a conversion layer including at least one planar quantum well configured to convert the first radiation into a second radiation, by photoluminescence, a grating for extracting the second radiation being etched on an upper face of the layer, and a lateral reflector having a reflective surface which extends facing part at least of a lateral surface of the conversion layer.
    Type: Application
    Filed: June 8, 2021
    Publication date: December 16, 2021
    Inventors: Badhise BEN BAKIR, Adrien GASSE, Gilles LE BLEVENNEC, Nicolas OLIVIER
  • Publication number: 20210193976
    Abstract: The invention relates to a method for producing a light-emitting diode, comprising a stack formed of a first semiconductor layer 11 and of an active layer 13, a reflective electrode 4 extending in contact with the first semiconductor layer 11, comprising a step of determining a distance between emitting dipoles that are located in the active layer 13 and the reflective electrode 4 for which a lifetime of the emitting dipoles having a chosen orientation is longer than that of the emitting dipoles having the non-chosen orientation.
    Type: Application
    Filed: December 22, 2020
    Publication date: June 24, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Gilles LE BLEVENNEC, Badhise BEN BAKIR, Eirini SARELLI
  • Publication number: 20210193888
    Abstract: The invention relates to a method for producing a light-emitting diode comprising a semiconductor stack formed of a first layer 11, of an active layer 13, and of an extraction layer 6. It comprises a step of determining a distance h1s between emitting dipoles ?1 that are located in the active layer 13 and the extraction layer 6, such that the emitting dipoles ?1 of vertical orientation have in particular a lifetime longer than that of the emitting dipoles of horizontal orientation.
    Type: Application
    Filed: December 22, 2020
    Publication date: June 24, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Gilles LE BLEVENNEC, Badhise BEN BAKIR, Eirini SARELLI
  • Publication number: 20200274036
    Abstract: An optoelectronic device includes a LED that is suited to the emission of a radiation and that includes an active layer, and a conversion layer that extends over the active layer of the LED and that includes a plurality of fluorophores suited to the conversion of the radiation emitted by the LED, wherein the conversion layer is confined laterally by a mirror reflecting both the radiation converted by the fluorophores and the radiation not converted by the fluorophores, and vertically between a first and a second multilayer reflective filters forming a resonant Fabry-Perot cavity that blocks the radiation not converted by the fluorophores and has a transmittance peak for the radiation converted by the fluorophores.
    Type: Application
    Filed: February 20, 2020
    Publication date: August 27, 2020
    Inventors: Gilles LE BLEVENNEC, Badhise BEN BAKIR
  • Patent number: 10511147
    Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: December 17, 2019
    Assignees: Commissariat A L'Energie Atomique et aux Energies Alternatives, STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • Patent number: 10267989
    Abstract: A substrate locally pre-structured for the production of photonic components including a solid part made of silicon; a first localised region of the substrate, including a heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a second localised region of the substrate, including an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer; a wave guide on the oxide layer.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: April 23, 2019
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Karim Hassan, Corrado Sciancalepore, Helene Duprez, Badhise Ben Bakir
  • Publication number: 20180278021
    Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
    Type: Application
    Filed: May 30, 2018
    Publication date: September 27, 2018
    Applicants: Commissariat A L'Energie Atomique et aux Energies Alternatives, STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • Patent number: 10014660
    Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: July 3, 2018
    Assignees: Commisariat A L'Energie Atomique et aux Energies Alternatives, STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • Patent number: 9899800
    Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: February 20, 2018
    Assignees: Commissariat A L'Energie Atomique et aux Energies Alternatives, ST Microelectronics SA, ST Microelectronics (Crolles 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • Patent number: 9766400
    Abstract: A method for adjusting the properties of a photonic circuit such that they fit with expected properties, the photonic circuit including a waveguide which includes a light propagation region, is provided. The method includes a step of modifying the refractive index of at least one zone of the region, the step being implemented by an ion implantation in the at least one zone. It extends to a waveguide the light propagation region of which has at least one zone with a refractive index modified by ion implantation in which the light remains confined, as well as a photonic circuit incorporating such a guide.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: September 19, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Karim Hassan, Corrado Sciancalepore, Badhise Ben Bakir, Sylvie Menezo
  • Patent number: 9733499
    Abstract: This slow light waveguide includes an initial region which extends, along an optical axis, from a start starting from which the width of a central waveguide begins to continuously decrease up to an end beyond which the width of the central waveguide no longer decreases up to the end of a slowing section, this initial region overlapping a broadening region where the length of lateral teeth continuously increases, a final region which extends, along the optical axis, from a start starting from which the width of the central waveguide begins to continuously increase up to an end beyond which the width of the central waveguide no longer increases, this final region overlapping a narrowing region where the length of the lateral teeth continuously decreases.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: August 15, 2017
    Assignee: Commissariat à L'Energie Atomique et aux Energies Alternatives
    Inventors: Badhise Ben Bakir, Karim Hassan
  • Publication number: 20170141541
    Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.
    Type: Application
    Filed: November 11, 2016
    Publication date: May 18, 2017
    Applicants: Commissariat a l'energie atomique et aux energies alternatives, ST Microelectronics SA, ST Microelectronics (Crolles 2) SAS
    Inventors: Thomas FERROTTI, Badhise BEN BAKIR, Alain CHANTRE, Sebastien CREMER, Helene DUPREZ
  • Publication number: 20160299292
    Abstract: A method for adjusting the properties of a photonic circuit such that they fit with expected properties, the photonic circuit including a waveguide which includes a light propagation region, is provided. The method includes a step of modifying the refractive index of at least one zone of the region, the step being implemented by an ion implantation in the at least one zone. It extends to a waveguide the light propagation region of which has at least one zone with a refractive index modified by ion implantation in which the light remains confined, as well as a photonic circuit incorporating such a guide.
    Type: Application
    Filed: April 5, 2016
    Publication date: October 13, 2016
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Karim HASSAN, Corrado SCIANCALEPORE, Badhise BEN BAKIR, Sylvie MENEZO
  • Publication number: 20160124145
    Abstract: A substrate locally pre-structured for the production of photonic components including a solid part made of silicon; a first localised region of the substrate, including a heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a second localised region of the substrate, including an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer; a wave guide on the oxide layer.
    Type: Application
    Filed: October 15, 2015
    Publication date: May 5, 2016
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Karim HASSAN, Corrado SCIANCALEPORE, Helene DUPREZ, Badhise BEN BAKIR
  • Publication number: 20160056612
    Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
    Type: Application
    Filed: August 17, 2015
    Publication date: February 25, 2016
    Applicants: Commissariat A L'Energie Atomique et aux Energies Alternatives, STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • Patent number: 9134482
    Abstract: A coupler/splitter including two neighboring coplanar waveguide portions extending in a same direction, the first portion having a constant cross-section, the second portion having a variable cross-section so that the effective index of the second waveguide portion varies, in the upstream-to-downstream direction, from a first lower value to a second value higher than the effective index of the first portion, in adiabatic coupling conditions.
    Type: Grant
    Filed: May 14, 2013
    Date of Patent: September 15, 2015
    Assignee: Commissariat à l'énergie atmoique aux énergies alternatives
    Inventors: Badhise Ben Bakir, Antoine Descos, Alban Le Liepvre, Marco Lamponi, Guilhem De Valicourt, Guang-Hua Duan
  • Patent number: 9077152
    Abstract: The laser device includes an amplifier including a III-V heterostructure arranged to generate photons, and a waveguide which forms a loop and is optically coupled to the amplifier. The amplifier is arranged facing the waveguide only in the region of a first section of the waveguide.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: July 7, 2015
    Assignee: COMMISSARIAT A L′ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Badhise Ben Bakir, Antoine Descos, Jean-Marc Fedeli, Nicolas Olivier
  • Patent number: 8958670
    Abstract: The device for coupling an electromagnetic wave includes a waveguide and a slit metal guide. The slit metal guide is formed by two metal elements which are coplanar and spaced out from one another so as to form the slit. The slit metal guide is arranged in a plane offset from the plane of the waveguide and partially covers said waveguide, said waveguide and the slit guide being maintained at a distance from one another by a dielectric.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: February 17, 2015
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Cecile Delacour, Badhise Ben Bakir, Jean-Marc Fedeli, Alexei Tchelnokov
  • Publication number: 20140369700
    Abstract: A wavelength tunable laser emission device (1) comprises: a first waveguide (31) comprising an optical amplification means for producing a stimulated light emission, the first waveguide extending in a longitudinal direction of the emission device, a second waveguide (5) made of silicon on silicon dioxide and disposed parallel to the first waveguide spaced from the first waveguide in a vertical direction of the emission device so as to allow the existence of a hybrid optical mode coupled at one and the same time to the second waveguide and to the first waveguide, the second waveguide comprising a distributed reflector (9) along the second waveguide, the second waveguide comprising transverse zones (11, 12, 13, 14) doped differently so as to form a polar junction oriented in a transverse direction of the emission device. Electrodes (15, 16) coupled to the doped transverse zones modify an effective index seen by the hybrid optical mode.
    Type: Application
    Filed: June 4, 2014
    Publication date: December 18, 2014
    Inventors: Hélèn DEBREGEAS-SILLARD, Badhise Ben BAKIR, Guang-Hua DUAN, Nicolas CHIMOT