Abstract: A bitline structure for use in a memory device may be connected to a plurality of bit memory cells. The bitline may be segmented into segments connected to one-third of the plurality of bit memory cells and two-thirds of the bit memory cells, respectively. The segments may be electrically coupled to each other to provide an overall bitline output.

Abstract: A bitline structure for use in a memory device may be connected to a plurality of bit memory cells. The bitline may be segmented into segments connected to one-third of the plurality of bit memory cells and two-thirds of the bit memory cells, respectively. The segments may be electrically coupled to each other to provide an overall bitline output.

Abstract: One or more processing functions may be off-loaded from a general-purpose processing device to auxiliary processing devices. The auxiliary processing devices may include a programmable element and a fixed-function element that may be pre-configured to perform the one or more processing functions. The programmable element and the fixed-function element may be dies of a multi-chip module (MOM) in a common package that can contain the general-purpose processing device, or the general-purpose processing device may reside outside of the MOM.

Abstract: A ball-grid-array (BGA) package is disclosed that includes traces within a BGA substrate. At least one of the traces is configured to match a low-impedance load presented by a BGA substrate pad and associated circuitry on a flip-chip die to an impedance of a circuit board trace. Each configured trace includes a relatively narrow section coupling to a tapered section that widens from the relatively narrow section to join a relatively wider trace section.

Abstract: An arithmetic logic unit (ALU) implemented with complementary pass gate logic using propagate, generate, and kill is provided. Broadly speaking, the ALU is a 64-bit ALU using a multi-stage global carry chain to generate intermediate fourth-bit carries that are folded with local four-bit sums to efficiently generate a final sum output. The ALU implements ones complement subtraction by incorporating a subtraction select signal to invert each bit of a second operand. The ALU circuitry implements a push-pull methodology to improve performance.

Abstract: An arithmetic logic unit (ALU) implemented with complementary pass gate logic using propagate, generate, and kill is provided. Broadly speaking, the ALU is a 64-bit ALU using a multi-stage global carry chain to generate intermediate fourth-bit carries that are folded with local four-bit sums to efficiently generate a final sum output. The ALU implements ones complement subtraction by incorporating a subtraction select signal to invert each bit of a second operand. The ALU circuitry implements a push-pull methodology to improve performance.

Abstract: A method for reducing sub-threshold leakage during the burn-in procedure for a semi-conductor is disclosed. The method includes applying a back-bias voltage to the device during the burn-in procedure. The back-bias voltage increases the threshold voltage of the semi-conductor device and consequently, reduces the sub-threshold leakage current.

Abstract: A method for reducing sub-threshold leakage during the burn-in procedure for a semi-conductor is disclosed. The method includes applying a back-bias voltage to the device during the burn-in procedure. The back-bias voltage increases the threshold voltage of the semi-conductor device and consequently, reduces the sub-threshold leakage current.

Abstract: An output buffer that controls the slew rate of its output signal is disclosed. The buffer includes a pull-up and a pull-down bipolar transistor coupled at a common output node in series between VDD and VSS. The buffer also includes a first set of parallel MOS devices coupled between the common output node and the base of the pull-down bipolar transistor. A second set of parallel MOS devices are coupled between the base of the pull-up output stage bipolar transistor and VDD. The gates of each set of MOS devices are coupled to a digital select signal. The amount of current driving the base of each of the pull-up and pull-down transistors (when they are enabled) is determined by the number of MOS devices enabled by the digital select signal. Thus, the buffer of the present invention is able to adjust the slew rate of its output signal to accommodate different loads coupled to the common output node.

Abstract: A current mode access BiCMOS memory cell is disclosed. The memory cell includes a CMOS storage cell for storing first and second CMOS voltage potentials, VDD and VSS, corresponding to first and second logic levels. The storage cell includes two CMOS inverters coupled between VDD and VSS. The storage cell is coupled to a conversion circuit. The conversion circuit is coupled between third and fourth ECL working potentials. It functions to convert the first and second CMOS voltage potentials into the third and fourth working potentials. The third and fourth voltage potentials are coupled to the bases of two bipolar signal converters. The emitters of the bipolar signal converters are coupled to a selectable current source and the collectors of the bipolar signal converters are coupled to complementary bit lines. The selectable current source is responsive to a read word signal.