Patents by Inventor Bang Won Oh
Bang Won Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10302256Abstract: A lighting apparatus including a plurality of frames connected to each other in the lengthwise direction; a connector, which is arranged between the plurality of frames and interconnects the plurality of frames by including a portion inserted into one of the plurality of frames, and including another portion inserted into the other one of the plurality of frames; and a light source arranged on the plurality of frames.Type: GrantFiled: April 18, 2016Date of Patent: May 28, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Young-kwang Kwon, Joo-hun Han, Bang-won Oh, Du-su Kwon, Hyun-kyung Kim, Yoon-ki Park, Yoon-suk Lee
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Patent number: 10006623Abstract: A lighting device includes a body portion on which a light source is mounted; a terminal unit, provided at each of both ends of the body portion, receiving power for driving the light source; and a sealing unit movably disposed between the body portion and the terminal unit so as to prevent a gap between the body portion and the terminal unit.Type: GrantFiled: April 18, 2016Date of Patent: June 26, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-kwang Kwon, Hyung-jin Kim, Do-hyeon Lee, Bang-won Oh
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Publication number: 20160312961Abstract: A lighting apparatus including a plurality of frames connected to each other in the lengthwise direction; a connector, which is arranged between the plurality of frames and interconnects the plurality of frames by including a portion inserted into one of the plurality of frames, and including another portion inserted into the other one of the plurality of frames; and a light source arranged on the plurality of frames.Type: ApplicationFiled: April 18, 2016Publication date: October 27, 2016Inventors: Young-kwang Kwon, Joo-hun Han, Bang-won Oh, Du-su Kwon, Hyun-kyung Kim, Yoon-ki Park, Yoon-suk Lee
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Publication number: 20160230979Abstract: A lighting device includes a body portion on which a light source is mounted; a terminal unit, provided at each of both ends of the body portion, receiving power for driving the light source; and a sealing unit movably disposed between the body portion and the terminal unit so as to prevent a gap between the body portion and the terminal unit.Type: ApplicationFiled: April 18, 2016Publication date: August 11, 2016Inventors: Young-kwang Kwon, Hyung-jin Kim, Do-hyeon Lee, Bang-won Oh
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Publication number: 20140127848Abstract: Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.Type: ApplicationFiled: January 10, 2014Publication date: May 8, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Hyun CHO, Masayoshi KOIKE, Yuji IMAI, Min Ho KIM, Bang Won OH, Hun Joo HAHM
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Patent number: 8664687Abstract: Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.Type: GrantFiled: July 26, 2004Date of Patent: March 4, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Dong Hyun Cho, Masayoshi Koike, Yuiji Imai, Min Ho Kim, Bang Won Oh, Hun Joo Hahm
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Patent number: 8405103Abstract: There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.Type: GrantFiled: July 30, 2008Date of Patent: March 26, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Dong Yul Lee, Seong Ju Park, Min Ki Kwon, Ja Yeon Kim, Yong Chun Kim, Bang Won Oh, Seok Min Hwang, Je Won Kim
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Publication number: 20110300652Abstract: There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.Type: ApplicationFiled: August 16, 2011Publication date: December 8, 2011Applicant: Samsung LED Co., Ltd.Inventors: Seong Eun Park, Bang Won OH, Gil Han Park, Min Ho Kim, Rak Jun Choi, Young Min Park, Hee Seok Park
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Patent number: 8012779Abstract: A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: GrantFiled: July 24, 2007Date of Patent: September 6, 2011Assignee: Samsung LED Co., Ltd.Inventors: Seok Beom Choi, Bang Won Oh, Jong Gun Woo, Doo Go Baik
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Patent number: 7906785Abstract: A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.Type: GrantFiled: October 24, 2006Date of Patent: March 15, 2011Assignee: Samsung LED Co., Ltd.Inventors: Doo Go Baik, Bang Won Oh, Tae Jun Kim
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Patent number: 7902544Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.Type: GrantFiled: May 26, 2010Date of Patent: March 8, 2011Assignee: Samsung LED Co., LtdInventors: Sun Woon Kim, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
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Patent number: 7872276Abstract: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portionsType: GrantFiled: May 1, 2007Date of Patent: January 18, 2011Assignee: Samsung LED Co., Ltd.Inventors: Su Yeol Lee, Bang Won Oh, Doo Go Baik, Tae Sung Jang, Jong Gun Woo, Seok Beom Choi, Sang Ho Yoon, Dong Woo Kim, In Tae Yeo
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Patent number: 7829882Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.Type: GrantFiled: October 17, 2006Date of Patent: November 9, 2010Assignee: Samsung LED Co., Ltd.Inventors: Sun Woon Kim, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
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Publication number: 20100230657Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.Type: ApplicationFiled: May 26, 2010Publication date: September 16, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sun Woon KIM, Je Won Kim, Sang Won Kang, Keun Man Song, Bang Won Oh
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Publication number: 20100213490Abstract: According to an aspect of the present invention, there is provided a sealing composition for a light emitting device, the sealing composition including: a silicone/epoxy compound resin including a silicone resin having at least one silicon atom-bonded hydroxyl group and an epoxy resin having at least one oxirane group while the hydroxyl group of the silicone resin and the oxirane group of the epoxy resin are chemically bound to each other.Type: ApplicationFiled: February 24, 2010Publication date: August 26, 2010Inventors: Il Woo PARK, Yong Chun Kim, Na Na Park, Bang Won Oh
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Patent number: 7695989Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.Type: GrantFiled: March 18, 2009Date of Patent: April 13, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Doo Go Baik, Bang Won Oh, Seok Beom Choi, Su Yeol Lee
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Patent number: 7573076Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.Type: GrantFiled: December 6, 2006Date of Patent: August 11, 2009Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Doo Go Baik, Bang Won Oh, Seok Beom Choi, Su Yeol Lee
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Publication number: 20090184334Abstract: There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.Type: ApplicationFiled: July 30, 2008Publication date: July 23, 2009Inventors: Dong Yul Lee, Seong Ju Park, Min Ki Kwon, Ja Yeon Kim, Yong Chun Kim, Bang Won Oh, Seok Min Hwang, Je Won Kim
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Publication number: 20090181485Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.Type: ApplicationFiled: March 18, 2009Publication date: July 16, 2009Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Doo Go BAIK, Bang Won Oh, Seok Beom Choi, Su Yeo Lee
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Patent number: 7553682Abstract: According to a method of manufacturing a vertical nitride light emitting device, a first conductivity type nitride layer, an active layer and a second conductivity type nitride layer are sequentially grown on a preliminary growth substrate to form a light emission structure. The light emission structure is cut according to a final size of light emitting devices, leaving a predetermined thickness of the first conductivity type nitride layer intact. A permanent conductive substrate is provided on the light emission structure and the preliminary substrate is diced into a plurality of units. Laser beam is irradiated to detach the preliminary substrate, thereby separating the light emission structure according to the size of the light emitting devices. First and second contacts are formed on the first conductivity type nitride layer and the permanent conductive substrate, respectively. The permanent conductive substrate is diced to complete individual light emitting devices.Type: GrantFiled: October 23, 2006Date of Patent: June 30, 2009Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Doo Go Baik, Bang Won Oh, Nam Seung Kim