Abstract: A system that has plural different photodetector circuits, each photodetector circuit including its own transfer gate, and each of the plural different photodetector circuits and transfer gates commonly connected to a first node. In amplifier is used which maintains a fixed voltage edits input. The amplifier Has a first capacitance to ground in a second capacitance as a feedback between its output and input. In one embodiment, there are 16 photodetector circuits connected to the single amplifier. In embodiments, the photodetector circuits can be located in one substrate while the amplifier is located in another substrate, and the amplifier also minimizes parasitics between the substrates.

Abstract: The invention provides the art with novel image sensor pixel designs comprising stacked, pinned photodiodes. The stacked pinned photodiodes provide pixels with greatly increased dynamic range. The stacked pinned photodiodes also allow improved color discrimination for low light imaging, for example utilizing pixels with no overlaying color filter array.

Abstract: An image sensor system has a first stitched image sensor part that has multiple image sensing pixels and pixel gates. The multiple pixel gates are connected together by a first line on the first stitched image sensor part, and said multiple pixel gates are controlled by a first control signal. A second stitched image sensor part also has multiple sensing pixels and pixel gates, and the multiple pixel gates are connected together by a second line on said second stitched image sensor part, and said multiple pixel gates on said second stitched image sensor part are controlled by the first control signal. A driver for the first control signal, wherein said driver includes a first part for controlling said multiple pixel gates of said first stitched image sensor part and said driver has a second part, also driven by the same first control signal, for controlling said multiple pixel gates of said second stitched image sensor part.

Abstract: Provided herein are novel hybrid sensor arrays comprising both global and rolling shutter pixels. The hybrid pixel arrays of the invention can be made predominantly of inexpensive rolling shutter pixels, augmented with smaller number of global shutter pixels. Data from the global shutter pixels can be used in various ways, for example, to rectify rolling shutter artifacts captured by the majority of the pixels in the array. These novel designs and associated methods advantageously enable the correction of rolling shutter artifacts while retaining the advantages of rolling shutter pixel cost and ease of manufacture.

Abstract: CMOS image sensors are generally customized and designed for specific functions and capabilities. Chip layout design and the development of fabrication schemes are very expensive. This high non-recurring engineering cost presents a significant barrier to the development of chips performing new processing schemes, for example specialty chips for small markets. Accordingly, there is a need in the art for simplified means of providing customized image sensors. Disclosed herein are novel stacked image sensors comprising an image sensor wafer stacked on one or more customizable processing wafers. The processing wafer comprises one or more reconfigurable components that can be programmed and customized to perform a very broad set of operations, providing the art with a means of obtaining a customizable image sensor without the substantial non-recurring engineering costs encountered using current technologies.

Abstract: An A/D converter system that has a ranging detector that receives and characterizes an input signal. The characterizing sets a coarse range selection based on a level of the input signal. A higher level input signal has a higher level ranging. An A/D converter includes a compression system that compresses based on the ranging output signal by converting different numbers of bits for different level ranging output signal. A higher level input signal is more higher compressed and produces a digital output indicative of the input signal, which is compressed by different amounts based on the ranging output signal. By scaling in this way, the resolution of the A/D converter is scaled on the basis of shot noise level of the image sensor.

Abstract: Provided herein is a novel stacked pixel design for image sensor applications. The stacked pixel designs may comprise a first and second wafer, wherein the first wafer is an elemental wafer comprising a photodiode and minimal additional components, such that material selection and processing steps of the first wafer may be optimized for the creation of a high quality photodiode. The second wafer comprises components necessary for the readout and reset of the photodiode on the first wafer.

Abstract: The invention provides the art with novel image sensor pixel designs comprising stacked, pinned photodiodes. The stacked pinned photodiodes provide pixels with greatly increased dynamic range. The stacked pinned photodiodes also allow improved color discrimination for low light imaging, for example utilizing pixels with no overlaying color filter array.

Abstract: A successive approximation A/D converter which includes a sub ranging classifier that receives an input signal and classifies said input signal according to plural different highest resolution bits, to determine a range of the input signal, and creating a set of most significant bits based on said range, said subranging classifier also setting and determining an offset based on said range, and a successive approximation A/D converted that converting lowest resolution parts of the input signal as adjusted by the offset.

Abstract: A successive approximation A/D converter which includes a sub ranging classifier that receives an input signal and classifies said input signal according to plural different highest resolution bits, to determine a range of the input signal, and creating a set of most significant bits based on said range, said subranging classifier also setting and determining an offset based on said range, and a successive approximation A/D converted that converting lowest resolution parts of the input signal as adjusted by the offset.

Abstract: An image sensor system has a first stitched image sensor part that has multiple image sensing pixels and pixel gates. The multiple pixel gates are connected together by a first line on the first stitched image sensor part, and said multiple pixel gates are controlled by a first control signal. A second stitched image sensor part also has multiple sensing pixels and pixel gates, and the multiple pixel gates are connected together by a second line on said second stitched image sensor part, and said multiple pixel gates on said second stitched image sensor part are controlled by the first control signal. A driver for the first control signal, wherein said driver includes a first part for controlling said multiple pixel gates of said first stitched image sensor part and said driver has a second part, also driven by the same first control signal, for controlling said multiple pixel gates of said second stitched image sensor part.

Abstract: A system that has plural different photodetector circuits, each photodetector circuit including its own transfer gate, and each of the plural different photodetector circuits and transfer gates commonly connected to a first node. In amplifier is used which maintains a fixed voltage edits input. The amplifier Has a first capacitance to ground in a second capacitance as a feedback between its output and input. In one embodiment, there are 16 photodetector circuits connected to the single amplifier. In embodiments, the photodetector circuits can be located in one substrate while the amplifier is located in another substrate, and the amplifier also minimizes parasitics between the substrates.

Abstract: A controlling console for moving elements such as trusses and winches. A console body has a display screen, and a processor which is programmed to produce an output screen on the display screen which accepts controls for controlling at least one movable device. The output screen includes a plurality of different logical blocks which are connected together. Values and conditions such as true, false, rising edge or error can be entered. The console arranges this into a flow arrangement.

Abstract: Techniques are disclosed for enhancing the speed at which pixel levels are read out and sampled for processing. A method of processing pixel levels includes clamping a pixel readout line to a voltage level less than a voltage corresponding to a signal sensed by an n-MOS pixel. Subsequently, the pixel readout line is coupled to an output of an n-MOS source-follower and the pixel signal is read out onto the pixel readout line through the n-MOS source-follower. The pixel signal that was read out is passed through a p-MOS source-follower to a processing circuit. Before passing the pixel signal through the p-MOS source-follower to the processing circuit, a capacitive storage node in the processing circuit is clamped to a voltage greater than a signal at an input to the p-MOS source-follower. Subsequently, an output of the p-MOS source-follower is coupled to the processing circuit, and a signal corresponding to the pixel signal is stored by the processing circuit.

Abstract: Imaging sensors having dual-port for digital readout to pipeline readout processes of two different groups of pixels.

Abstract: An image sensor with an electronic neutral density filter. Each pixel of the image sensor is capable of being electronically adjusted such that the total charge integration is effectively changed by an amount of the adjustment. The adjustment uses a variable capacitor, here are paper wrapped are formed by an MOS transistor. The capacitor may be within each pixel, or may be shared between multiple pixels.

Abstract: Techniques are disclosed for enhancing the speed at which pixel levels are read out and sampled for processing. A method of processing pixel levels includes clamping a pixel readout line to a voltage level less than a voltage corresponding to a signal sensed by an n-MOS pixel. Subsequently, the pixel readout line is coupled to an output of an n-MOS source-follower and the pixel signal is read out onto the pixel readout line through the n-MOS source-follower. The pixel signal that was read out is passed through a p-MOS source-follower to a processing circuit. Before passing the pixel signal through the p-MOS source-follower to the processing circuit, a capacitive storage node in the processing circuit is clamped to a voltage greater than a signal at an input to the p-MOS source-follower. Subsequently, an output of the p-MOS source-follower is coupled to the processing circuit, and a signal corresponding to the pixel signal is stored by the processing circuit.

Abstract: An electronic imaging sensor, which has an improved immunity to noise caused by unwanted x-rays, images an object by collecting charge carriers produced in the sensor when the object is exposed to x-rays. One or more shielding areas are formed proximate the sensor to capture or sweep away any undesirable charge carriers generated by the unwanted x-rays. The shielding areas extend deeper beneath the surface of the sensor than the depth at which the desired charge carriers corresponding to the object being imaged is collected. The shielding areas capture charge carriers formed by the unwanted x-rays, which penetrate into the sensor to a greater depth than the depth at which the desired charge carriers are collected. In this way, the undesirable charge carriers are captured near the region where they are generated and before they migrate towards the surface where they can be collected and manifest as noise in the resulting image of the object.

Abstract: An electronic imaging sensor, which has an improved immunity to noise caused by unwanted x-rays, images an object by collecting charge carriers produced in the sensor when the object is exposed to x-rays. One or more shielding areas are formed proximate the sensor to capture or sweep away any undesirable charge carriers generated by the unwanted x-rays. The shielding areas extend deeper beneath the surface of the sensor than the depth at which the desired charge carriers corresponding to the object being imaged is collected. The shielding areas capture charge carriers formed by the unwanted x-rays, which penetrate into the sensor to a greater depth than the depth at which the. desired charge carriers are collected. In this way, the undesirable charge carriers are captured near the region where they are generated and before they migrate towards the surface where they can be collected and manifest as noise in the resulting image of the object.

Abstract: An image sensor with an electronic neutral density filter. Each pixel of the image sensor is capable of being electronically adjusted such that the total charge integration is effectively changed by an amount of the adjustment. The adjustment uses a variable capacitor, here are paper wrapped are formed by an MOS transistor. The capacitor may be within each pixel, or may be shared between multiple pixels.