Abstract: Apparatus for depositing a film of material on a substrate may comprise sputter deposition apparatus for transferring target atoms from a target to the substrate and a servo control circuit operatively associated with the sputter deposition apparatus. The servo control circuit operates the sputter deposition apparatus in an alternating manner between an "active" state and a "quiescent" state so that a power density on the target during the "active" state is at least about 400 watts per square inch of target area. During the active state, target atoms are transferred from the target to the substrate. During the quiescent state, substantially no target atoms are transferred from the target to the substrate. A polarity reversing circuit operatively associated with the servo control circuit periodically reverses a polarity on the sputter deposition apparatus during the "active" state.

Abstract: A magnet assembly may comprise a first magnet plate having a first magnet mounted thereon and a second magnet plate having a second magnet mounted thereon and a third magnet mounted thereon adjacent the second magnet so that a pole axis of the second magnet is substantially perpendicular to a pole axis of the third magnet. The second magnet plate is positioned adjacent the first magnet plate so that a plasma-confining magnetic field is created between the first, second, and third magnets. The first and second magnet plates are also moveable with respect to one another so that they can be moved between a center position configuration and an end position configuration.

Abstract: An AC plasma processing system according to the present invention may include a transformer for placing an alternating current on a first electrode and a second electrode contained within a process chamber. The secondary winding of the transformer is connected across the first and second electrodes. The primary winding of the transformer is connected to an external power supply. A switching device connected to the primary winding of the transformer periodically short circuits the primary winding to induce a secondary voltage in the secondary winding that is less than the arcing voltage associated with the process chamber.

Abstract: Plasma processing apparatus may comprise a process chamber having a process gas supply for providing a process gas to the process chamber and a vacuum pump for maintaining the process chamber within a predetermined pressure range. A cathode/target assembly positioned within the process chamber is connected to a first terminal of an external power supply. An anode/ion source assembly is also positioned within the process chamber and may include an electrode member having a central aperture therein that defines an active surface on the electrode member. The electrode member is connected to a second terminal of the external power supply. A magnet positioned adjacent the electrode member produces an electron-confining magnetic tunnel adjacent the active surface of the electrode member. The electron-confining magnetic tunnel momentarily traps electrons adjacent the active surface, some of which ionize some of the process gas.

Abstract: A polarity reversing circuit having energy compensation may comprise a first inductor connected between the first electrode and a negative terminal of a power supply. The positive terminal of the power supply is connected to the second electrode. A diode and a first capacitor are connected in series across the first inductor so that the cathode of the diode is connected to the first electrode. A second capacitor and a switching device are also connected in series across the first and second electrodes. A second inductor is connected between the switching device and the anode of the diode. A bi-directional converter is connected between the power supply and the second capacitor. The voltage polarity between the first and second electrodes may be reversed by actuating the switching device to switch between a non-conducting state and a conducting state.

Abstract: A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter deposition and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. In one aspect, the associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by the ability to form durable optical quality thin films of nominal refractive indices and controlled coating thickness, including both constant and selectively varied thickness profiles.

Abstract: A circuit for reversing a voltage polarity on a first electrode and a second electrode may comprise a first inductor connected between the first electrode and a negative terminal of an external power supply. The positive terminal of the power supply is connected to the second electrode. A diode and a first capacitor are connected in series across the first and second electrodes so that the cathode of the diode is connected to the first electrode. A second capacitor and a switching device are also connected in series across the first and second electrodes. A second inductor is connected between the switching device and the anode of the diode.

Abstract: A sputtering magnet assembly generates a magnetic field having sufficient strength to produce a plasma-confining magnetic tunnel over the front surface of a magnetic target. A magnetic shunt positioned a spaced distance from the back surface of the magnetic target provides an alternate path for excess magnetic flux liberated by erosion of the target. The alternate path provided by the magnetic shunt has a lower magnetic resistance than most paths that exit the front surface of the target, pass into the sputtering region, and re-enter the front surface of the target. Accordingly, most of the excess magnetic flux is prevented from escaping into the sputtering region.

Abstract: A sputtering magnet assembly includes a plate-shaped pole piece made from a magnetically permeable material and a central magnet positioned substantially at the center of the pole piece and oriented so that its north-south magnetic orientation is substantially perpendicular to the plate shaped pole piece. A plurality of outer magnets are positioned around the central magnet, each of which has its north-south magnetic orientation also perpendicular to the pole piece, but opposite of the orientation of the central magnet. A plurality of primary inner magnets are arranged around the central magnet, between the central magnet and the outer magnets, each of which primary inner magnets has its north-south magnetic orientation parallel to the base pole piece and perpendicular to the magnetic orientations of the central magnet and the outer magnets.

Abstract: A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter deposition and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. In one aspect, the associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by the ability to form durable optical quality thin films of nominal refractive indices and controlled coating thickness, including both constant and selectively varied thickness profiles.

Abstract: A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter cathode and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated cathode and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.